硫系合金存储材料中原子排列的超快光学操纵
Ultrafast optical manipulation of atomic arrangements in chalcogenide alloy memory materials
摘要：
一类硫属化物合金材料在非晶-结晶相变时显示出光学性质的显著变化，这导致了现代光学数据存储中大数据容量的发展。在硫系相变材料中，Ge 2Sb 2 Te 5（GST）由于其可靠性而被最广泛地使用。我们使用一对飞秒光脉冲来演示超晶格中Ge原子从四面体（非晶）到八面体（晶）的超快光学操作。取决于第二泵浦脉冲的参数，超快非热相变发生在对应于GeTe 4局部振动的相干运动的仅几个周期（~ 1 ps）内。在硫属化物合金存储器中使用超快开关可能会导致存储器设备的重大范式转变，超越当前一代基于硅的闪存。
英文摘要：
A class of chalcogenide alloy materials that shows significant changes in optical properties upon an amorphous-to-crystalline phase transition has lead to development of large data capacities in modern optical data storage. Among chalcogenide phase-change materials, Ge2Sb2Te5 (GST) is most widely used because of its reliability. We use a pair of femtosecond light pulses to demonstrate the ultrafast optical manipulation of atomic arrangements from tetrahedral (amorphous) to octahedral (crystalline) Ge-coordination in GST superlattices. Depending on the parameters of the second pump-pulse, ultrafast nonthermal phase-change occurred within only few-cycles (~ 1 ps) of the coherent motion corresponding to a GeTe4 local vibration. Using the ultrafast switch in chalcogenide alloy memory could lead to a major paradigm shift in memory devices beyond the current generation of silicon-based flash-memory.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
