The luminescence caused by the interband transitions of hot carriers in graphene is considered theoretically. The dependencies of emission in mid- and near-IR spectral regions versus energy and concentration of hot carriers are analyzed; they are determined both by an applied electric field and a gate voltage. The polarization dependency is determined by the angle between the propagation direction and the normal to the graphene sheet. The characteristics of radiation from large-scale-area samples of epitaxial graphene and from microstructures of exfoliated graphene are considered. The averaged over angles efficiency of emission is also presented.
We report a method to promote photoluminescence emission in graphene materials by enhancing carrier scattering instead of directly modifying band structure in multilayer reduced graphene oxide (rGO) nanospheres. We intentionally curl graphene layers to form nanospheres by reducing graphene oxide with spherical polymer templates to manipulate the carrier scattering. These nanospheres produce hot-carrier luminescence with more than ten-fold improvement of emission efficiency as compared to planar nanosheets. With increasing excitation power, hot-carrier luminescence from nanospheres exhibits abn…
A consistent explanation of the formation of a ring-shaped pattern of exciton luminescence in GaAs/AlGaAs double quantum wells is suggested. The pattern consists of two concentric rings around the laser excitation spot. It is shown that the luminescence rings appear due to the in-layer transport of hot charge carriers at high photoexcitation intensity. Interestingly, one of two causes of this transport might involve self-organized criticality (SOC) that would be the first case of the SOC observation in semiconductor physics. We test this cause in a many-body numerical model by performing exten…
We study experimentally and theoretically polarization-dependent luminescence from an ensemble of quantum-dot-like nanostructures with a very large in-plane shape anisotropy (quantum dashes). We show that the measured degree of linear polarization of the emitted light increases with the excitation power and changes with temperature in a non-trivial way, depending on the excitation conditions. Using an approximate model based on the k.p theory, we are able to relate this degree of polarization to the amount of light hole admixture in the exciton states which, in turn, depends on the symmetry of…
We show room temperature valley coherence with in MoS2, MoSe2, WS2 and WSe2 monolayers using linear polarization resolved hot photoluminescence (PL), at energies close to the excitation - demonstrating preservation of valley coherence before sufficient scattering events. The features of the co-polarized hot luminescence allow us to extract the lower bound of the binding energy of the A exciton in monolayer MoS2 as 0.42 (+/- 0.02) eV. The broadening of the PL peak is found to be dominated by Boltzmann-type hot luminescence tail, and using the slope of the exponential decay, the carrier temperat…
(In,Ga)N insertions embedded in self-assembled GaN nanowires are of current interest for applications in solid state light emitters. Such structures exhibit a notoriously broad emission band. We use cathodoluminescence spectral imaging in a scanning electron microscope and micro-photoluminescence spectroscopy on single nanowires to learn more about the mechanisms underlying this emission. We observe a shift of the emission energy along the stack of six insertions within single nanowires that may be explained by compositional pulling. Our results also corroborate reports that the localization o…
Under certain conditions, focused laser excitation in semiconductor quantum well structures can lead to charge separation and a circular reaction front, which is visible as a ring-shaped photoluminescence pattern. The diffusion-reaction equations governing the system are studied here with the aim of a detailed understanding of the steady state. The qualitative asymmetry in the sources for the two carriers is found to lead to unusual effects which dramatically affect the steady-state configuration. Analytic expressions are derived for carrier distributions and interface position for a number of…
We have developed a theoretical model to analyze the anomalous cooling of radiative quantum dot (QD) excitons by THz radiation reported by Yusa et al [Proc. 24th ICPS, 1083 (1998)]. We have made three-dimensional (3D) modeling of the strain and the piezoelectric field and calculated the 3D density of states of strain induced quantum dots. On the basis of this analysis we have developed a spin dependent Monte Carlo model, which describes the carrier dynamics in QD's when the intraband relaxation is modulated by THz radiation. We show that THz radiation causes resonance transfer of holes from da…
We present direct experimental evidences of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measurement of the luminescence spectrum under local injection of electrons from a scanning tunneling microscope tip into a near-surface single quantum well. Fluctuations in the emission line shape are observed on a few-nanometer scale. Narrow emission peaks characteristic of single localized states are resolved. Calculations in the framework of the localization landscape theory provide the effective confining potential m…
Sub-diffraction-resolved spatial distribution of emitting excitons in STM-induced luminescence of 2D semiconductors via Richardson-Lucy deconvolution
Université Paris-Saclay（巴黎萨克雷大学）；CNRS（法国国家科学研究中心）；Institut des Sciences Moléculaires d’Orsay（奥赛分子科学学院）；Max Planck Institute for Solid State Research（马克斯·普朗克固体研究所）；Technical University of Dresden（德累斯顿工业大学）；Institut de Physique et de Chimie des Matériaux de Strasbourg, Université de Strasbourg（斯特拉斯堡材料物理与化学研究所，斯特拉斯堡大学）；NTT Research, Inc.（日本电信电话研究公司）
The two-photon luminescence (TPL) of gold nanoparticles (NP) was shown to result from the excitation of hot carriers, the plasmonic NP resonances playing an important role both for plasmon enhanced absorption and plasmon enhanced emission. However, the exact parameters enabling to control or optimize the NP nonlinear luminescence still need to be understood in detail. In this paper, we report the two-photon excited photoluminescence of single gold nanorods exhibiting identical aspect ratio (close to 4) and thus identical plasmonic resonances, but increasing volumes V (707 <V< 160 103 nm3 i.e. …
Hot charge carriers in graphene exhibit fascinating physical phenomena, whose understanding has improved greatly over the past decade. They have distinctly different physical properties compared to, for example, hot carriers in conventional metals. This is predominantly the result of graphene's linear energy-momentum dispersion, its phonon properties, its all-interface character, and the tunability of its carrier density down to very small values, and from electron- to hole-doping. Since a few years, we have witnessed an increasing interest in technological applications enabled by hot carriers…
We present evidence of all optical trion generation and emission in undoped single walled carbon nanotubes (SWCNTs). Luminescence spectra, recorded on individual SWCNTs over a large CW excitation intensity range, show trion emission peaks red-shifted with respect to the bright exciton peak. Clear chirality dependence is observed for 22 separate SWCNT species, allowing for determination of electron-hole exchange interaction and trion binding energy contributions. Luminescence data together with ultrafast pump probe experiments on chirality sorted bulk samples suggest that exciton-exciton annihi…
We describe the optical emission and the carrier dynamics of an ensemble of self-assembled GaAs quantum dots embedded in GaP(001). The QD formation is driven by the 3.6 % lattice mismatch between GaAs and GaP in Stranski-Krastanow mode after deposition of more than 1.2 monolayers of GaAs. The quantum dots have an areal density between 6 and 7.6x1010 per cm-2 and multimodal size distribution. The luminescence spectra show two peaks in the range of 1.7 and 2.1 eV. The samples with larger quantum dots have red emission and show less thermal quenching compared to the samples with smaller QDs. The …
We study the conductivity of a graphene strip taking into account electrostatically-induced charge accumulation on its edges. Using a local dependency of the conductivity on the carrier concentration we find that the electrostatic size effect in doped graphene strip of the width of 0.5 - 3 $% μ$m can result in a significant (about 40%) enhancement of the effective conductivity in comparison to the infinitely wide samples. This effect should be taken into account both in the device simulation as well as for verification of scattering mechanisms in graphene.
Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of ~ 5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high energy electrons or photons efficiently emit luminescence at deep-ultraviolet (DUV) frequencies via strong electron-phonon interaction, suggesting potential DUV light emitting device applications. However, electroluminescence from hBN has not been demonstrated at DUV frequencies so far. In this study, we report DUV electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures at room tem…
We present a numerical study on the intraband optical conductivity of hot carriers at quasi-equilibria in photoexcited graphene based on the semiclassical Boltzmann transport equations (BTE) with the aim of understanding the effects of intrinsic optical phonon and extrinsic coulomb scattering caused by charged impurities at the graphene--substrate interface. Instead of using full-BTE solutions, we employ iterative solutions of the BTE and the comprehensive model for the temporal evolutions of hot-carrier temperature and hot-optical-phonon occupations to reduce computational costs. Undoped grap…
Ultrafast electron thermalization - the process leading to Auger recombination, carrier multiplication via impact ionization and hot carrier luminescence - occurs when optically excited electrons in a material undergo rapid electron-electron scattering to redistribute excess energy and reach electronic thermal equilibrium. Due to extremely short time and length scales, the measurement and manipulation of electron thermalization in nanoscale devices remains challenging even with the most advanced ultrafast laser techniques. Here, we overcome this challenge by leveraging the atomic thinness of t…
