InGaN/GaN量子阱中本征组分无序诱导纳米尺度安德森局域化的扫描隧道发光光谱证据
Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy
摘要：
我们给出了InGaN/GAN量子阱本征合金成分无序引起的安德森局域化的直接实验证据。我们的方法依赖于从扫描隧道显微镜尖端到近表面单量子阱的电子局部注入下的发光光谱的测量。在几纳米尺度上观察到发射线形状的波动。单个局域态的窄发射峰特征得到解决。在局域化景观理论的框架内的计算提供了有效的约束势的组成波动所产生的地图。这一理论很好地解释了所观察到的纳米尺度载流子局域化和这些安德森型局域态的能量。局域态发射的能量扩展与通常观察到的InGaN/GAN量子阱结构的非常宽的光致发光或电致发光光谱一致。
英文摘要：
We present direct experimental evidences of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measurement of the luminescence spectrum under local injection of electrons from a scanning tunneling microscope tip into a near-surface single quantum well. Fluctuations in the emission line shape are observed on a few-nanometer scale. Narrow emission peaks characteristic of single localized states are resolved. Calculations in the framework of the localization landscape theory provide the effective confining potential map stemming from composition fluctuations. This theory explains well the observed nanometer scale carrier localization and the energies of these Anderson-type localized states. The energy spreading of the emission from localized states is consistent with the usually observed very broad photo- or electro-luminescence spectra of InGaN/GaN quantum well structures.
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