AI 中文总结
本研究通过室温环保合成制备Zn掺杂CuBr量子点，抑制缺陷发射并增强蓝色发光，实现96.4%色纯度，为高效无毒蓝光材料提供可扩展策略。
AI 中文摘要
深蓝色发光的CuBr量子点（QDs）作为无毒且不含重金属的光电材料具有前景，但其效率受到固有缺陷的限制。我们报道了Zn掺杂作为一种有效策略，以减轻在环境条件下通过环保的过饱和再结晶方法合成的CuBr量子点中缺陷介导的复合。XRD显示晶格收缩，Rietveld精修确认了取代掺杂，XPS验证了Cu$^+$/Zn$^{2+}$态且无第二相。HR-TEM分析揭示了均匀的3.46 ± 0.12 nm Zn:CuBr量子点，掺杂后带隙减小，表明量子限域效应减弱。在365 nm激发下，主要发射峰出现在406 nm（$Z_f$）和431 nm（$Z_{1,2}$）。缺陷FWHM变窄，带边发射增强，载流子寿命延长，实现了96.4%的色纯度，CIE坐标为（0.1520, 0.0395）。这些发现表明，Zn掺杂是一种简单、可扩展且环境友好的策略，用于工程化高效的蓝色发光CuBr量子点。
英文摘要
Deep-blue-emitting CuBr quantum dots (QDs) hold promise as nontoxic and heavy-metal-free optoelectronic materials, yet their efficiency is limited by intrinsic defects. We report Zn doping as an effective strategy to mitigate defect-mediated recombination in CuBr QDs synthesized via an eco-friendly supersaturated recrystallization method under ambient conditions. XRD shows lattice contraction, Rietveld refinement confirms substitutional doping, and XPS verifies Cu$^+$/ Zn$^{2+}$ states without secondary phases. HR-TEM analysis reveals uniform 3.46 $\pm$ 0.12 nm Zn:CuBr QDs with reduced bandgap, after doping, indicating weaker quantum confinement. The dominant emission peaks appear at 406 nm ($Z_f$) and 431 nm ($Z_{1,2}$) under 365 nm excitation. Narrows defect FWHM, elevated band-edge emission, and extends carrier lifetimes, achieving 96.4 \% color purity with CIE coordinates (0.1520, 0.0395). These findings demonstrate that Zn doping is a simple, scalable, and environmentally benign strategy for engineering efficient blue-emitting CuBr QDs.
