Most materials in available macroscopic quantities are polycrystalline. Graphene, a recently discovered two-dimensional form of carbon with strong potential for replacing silicon in future electronics, is no exception. There is growing evidence of the polycrystalline nature of graphene samples obtained using various techniques. Grain boundaries, intrinsic topological defects of polycrystalline materials, are expected to dramatically alter the electronic transport in graphene. Here, we develop a theory of charge carrier transmission through grain boundaries composed of a periodic array of dislocations in graphene based on the momentum conservation principle. Depending on the grain boundary structure we find two distinct transport behaviours - either high transparency, or perfect reflection of charge carriers over remarkably large energy ranges. First-principles quantum transport calculations are used to verify and further investigate this striking behaviour. Our study sheds light on the transport properties of large-area graphene samples. Furthermore, purposeful engineering of periodic grain boundaries with tunable transport gaps would allow for controlling charge currents without the need of introducing bulk band gaps in otherwise semimetallic graphene. The proposed approach can be regarded as a means towards building practical graphene electronics.
Graphene, a single atomic layer of graphitic carbon, has attracted intense attention due to its extraordinary properties that make it a suitable material for a wide range of technological applications. Large-area graphene films, which are necessary for industrial applications, are typically polycrystalline, that is, composed of single-crystalline grains of varying orientation joined by grain boundaries. Here, we present a review of the large body of research reported in the past few years on polycrystalline graphene. We discuss its growth and formation, the microscopic structure of grain bound…
Lacking a band gap largely limits the application of graphene in electronic devices. Previous study shows that grain boundaries (GBs) in polycrystalline graphene can dramatically alter the electrical properties of graphene. Here, we investigate the band structure of polycrystalline graphene tuned by externally imposed strains and intrinsic mismatch strains at the GB by density functional theory (DFT) calculations. We found that graphene with symmetrical GBs typically has zero band gap even with large uniaxial and biaxial strain. However, some particular asymmetrical GBs can open a band gap in …
The low-temperature thermal conductivity in polycrystalline graphene is theoretically studied. The contributions from three branches of acoustic phonons are calculated by taking into account scattering on sample borders, point defects and grain boundaries. Phonon scattering due to sample borders and grain boundaries is shown to result in a $T^α$-behaviour in the thermal conductivity where $α$ varies between 1 and 2. This behaviour is found to be more pronounced for nanosized grain boundaries. PACS: 65.80.Ck, 81.05.ue, 73.43.Cd
We report graphene films composed mostly of one or two layers of graphene grown by controlled carbon precipitation on the surface of polycrystalline Ni thin films during atmospheric chemical vapor deposition(CVD). Controlling both the methane concentration during CVD and the substrate cooling rate during graphene growth can significantly improve the thickness uniformity. As a result, one- or two- layer graphene regions occupy up to 87% of the film area. Single layer coverage accounts for 5-11% of the overall film. These regions expand across multiple grain boundaries of the underlying polycrys…
First principles calculations, employed to address the properties of polycrystalline graphene, indicate that the electronic structure of tilt grain boundaries in this system displays a rather complex evolution towards graphene bulk, as the tilt angle decreases, with the generation of a new Dirac point at the Fermi level, and an anisotropic Dirac cone of low energy excitations. Moreover, the usual Dirac point at the {\bf K} point falls below the Fermi level, and rises towards it as the tilt angle decreases. Further, our calculations indicate that the grain-boundary formation energy behaves non-…
Graphene has drawn wide attention due to its exceptional thermal conductivity but complete understanding of thermal characteristics of polycrystalline graphene is still elusive to date. For the first time, herein, we have systematically studied the effect of temperature on the thermal conductance behavior of polycrystalline graphene for a range of grain sizes and grain boundary types, by using non-equilibrium molecular dynamics simulations. It is noted that increasing the tempera-ture remarkably enhances thermal boundary conductance (Kapitza conductance) across grain boundaries while it deteri…
Aharonov-Bohm (AB) interferences in the quantum Hall regime can be achieved, provided that electrons are able to transmit between two edge channels in nanostructures. Pioneering approaches include quantum point contacts in 2DEG systems, bipolar graphene p-n junctions, and magnetic field heterostructures. In this work, defect scattering is proposed as an alternative mechanism to achieve AB interferences in polycrystalline graphene. Indeed, due to such scattering, the extended defects across the sample can act as tunneling paths connecting quantum Hall edge channels. Consequently, strong AB osci…
Defects in solid commonly limit mechanical performance of the material. However, recent measurements reported that the extraordinarily high strength of graphene is almost retained with the presence of grain boundaries. We clarify in this work that lattice defects in the grain boundaries and distorted geometry thus induced define the mechanical properties characterized under specific loading conditions. Atomistic simulations and theoretical analysis show that tensile tests measure in-plane strength that is governed by defect-induced stress buildup, while nanoindentation probes local strength un…
In this Letter, both the manipulation of valley-polarized currents and the optical-like behaviors of Dirac fermions are theoretically explored in polycrystalline graphene. When strain is applied, the misorientation between two graphene domains separated by a grain boundary can result in a mismatch of their electronic structures. Such a discrepancy manifests itself in a strong breaking of the inversion symmetry, leading to perfect valley polarization in a wide range of transmission directions. In addition, these graphene domains act as different media for electron waves, offering the possibilit…
Grain boundaries in graphene are inherent in wafer-scale samples prepared by chemical vapor deposition. They can strongly influence the mechanical properties and electronic and heat transport in graphene. In this work, we employ extensive molecular dynamics simulations to study thermal transport in large suspended polycrystalline graphene samples. Samples of different controlled grain sizes are prepared by a recently developed efficient multiscale approach based on the phase field crystal model. In contrast to previous works, our results show that the scaling of the thermal conductivity with t…
Graphene grown by chemical vapor deposition (CVD) is the most promising material for industrial-scale applications based on graphene monolayers. It also holds promise for spintronics; despite being polycrystalline, spin transport in CVD graphene has been measured over lengths up to 30 $μ$m, which is on par with the best measurements made in single-crystal graphene. These results suggest that grain boundaries (GBs) in CVD graphene, while impeding charge transport, may have little effect on spin transport. However, to date very little is known about the true impact of disordered networks of GBs …
The observation of large nonlocal resistances near the Dirac point in graphene has been related to a variety of intrinsic Hall effects, where the spin or valley degrees of freedom are controlled by symmetry breaking mechanisms. Engineering strong spin or valley Hall signals on scalable graphene devices could stimulate further practical developments of spin- and valleytronics. Here we report on scale-invariant nonlocal transport in large-scale chemical vapour deposition graphene under an applied external magnetic field. Contrary to previously reported Zeeman spin Hall effect, our results are ex…
We extend the phase field crystal (PFC) framework to quantitative modeling of polycrystalline graphene. PFC modeling is a powerful multiscale method for finding the ground state configurations of large realistic samples that can be further used to study their mechanical, thermal or electronic properties. By fitting to quantum-mechanical density functional theory (DFT) calculations, we show that the PFC approach is able to predict realistic formation energies and defect structures of grain boundaries. We provide an in-depth comparison of the formation energies between PFC, DFT and molecular dyn…
We use numerical simulations to predict peculiar magnetotransport fingerprints in polycrystalline graphene, driven by the presence of grain boundaries of varying size and orientation. The formation of Landau levels is shown to be restricted by the polycrystalline morphology, requiring the magnetic length to be smaller than the average grain radius. The nature of localization is also found to be unusual, with strongly localized states at the center of Landau levels (including the usually highly robust zero-energy state) and extended electronic states lying between Landau levels. These extended …
We have revealed the decisive role of grain-boundary-induced strain fields in electron scattering in polycrystalline graphene. To this end, we have formulated the model based on Boltzmann transport theory which properly takes into account the microscopic structure of grain boundaries (GB) as a repeated sequence of heptagon-pentagon pairs. The effect of strain field is described within the deformation potential theory. For comparison, we consider the scattering due to electrostatic potential of charged grain boundary. We show that at naturally low GB charges the deformation potential scattering…
We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene grown by chemical vapor deposition, which alters the accuracy of the Hall resistance quantization. The temperature and magnetic field dependence of the longitudinal conductivity exhibits unexpectedly smooth power law behaviors, which are incompatible with a description in terms of variable range hopping or thermal activation, but rather suggest the existence of extended or poorly localized states at energies between Landau levels. Such states could be caused by the hi…
Grain boundaries are commonly observed in carbon nanostructures, but their influence on thermal and electric properties are still not completely understood. Using a combined approach of density functional tight-binding theory and non-equilibrium Green functions we investigate electron and phonon transport in carbon based systems. In this work, quantum transport and thermoelectric properties are summarized for graphene sheets, graphene nanoribbons and carbon nanotubes with a variety of grain boundary types in a wide temperature range. Motivated by previous findings that disorder scatters phonon…
A theoretical model supported by experimental results explains the dependence of the Raman scattering signal on the evolution of structural parameters along the amorphization trajectory of polycrystalline graphene systems. Four parameters rule the scattering efficiencies, two structural and two related to the scattering dynamics. With the crystallite sizes previously defined from X-ray diffraction and microscopy experiments, the three other parameters (the average grain boundaries width, the phonon coherence length, and the electron coherence length) are extracted from the Raman data with the …
The strong interest in graphene has motivated the scalable production of high quality graphene and graphene devices. Since large-scale graphene films synthesized to date are typically polycrystalline, it is important to characterize and control grain boundaries, generally believed to degrade graphene quality. Here we study single-crystal graphene grains synthesized by ambient CVD on polycrystalline Cu, and show how individual boundaries between coalescing grains affect graphene's electronic properties. The graphene grains show no definite epitaxial relationship with the Cu substrate, and can c…
We develop a device model for pixelless converters of far/mid-infrared radiation (FIR/MIR) images into near-infrared/visible (NIR/VIR) images. These converters use polycrystalline graphene layers (PGLs) immersed in the van der Waals (vdW) materials integrated with light emitting diode (LED). The PGL serves as an element of the PGL infrared photodetector (PGLIP) sensitive to the incoming FIR/MIR due to the interband absorption. The spatially non-uniform photocurrent generated in the PGLIP repeats (mimics) the non-uniform distribution (image) created by the incident FIR/MIR. The injection of the…
Grain boundaries (GBs) are ubiquitous in polycrystalline graphene materials obtained by various growth methods. It has been shown previously that considerable electrical transport gap can be opened by grain boundaries. On the other hand, polycrystalline graphene with GBs is an atomically thin membrane that can sustain extraordinary amount of strain. Here, by using atomistic quantum transport numerical simulations, we examine modulation of electrical transport properties of graphene GBs. The results indicate the modulation of transport gap and electrical conductance strongly depends on the topo…
We systematically investigate the transmission of charge carriers across the grain-boundary defects in polycrystalline graphene by means of the Landauer-Büttiker formalism within the tight-binding approximation. Calculations reveal a strong suppression of transmission at low energies upon decreasing the density of dislocations with the smallest Burger's vector ${\mathbf b}=(1,0)$. The observed transport anomaly is explained from the point of view of back-scattering due to localized states of topological origin. These states are related to the gauge field associated with all dislocations charac…
Post-deposition CdCl$_2$ treatment of polycrystalline CdTe is known to increase photovoltaic efficiency. However, the precise chemical, structural, and electronic changes that underpin this improvement are still debated. In this study, spectroscopic photoemission electron microscopy was used to spatially map the vacuum level and ionization energy of CdTe films, enabling the identification of electronic structure variations between grains and grain boundaries. In vacuo preparation and inert transfer of oxide-free CdTe surfaces isolated the separate effects of CdCl$_2$ treatment and ambient oxyg…
Graphene, the two-dimensional form of carbon presents outstanding electronic and transport properties. This gives hope for the development of applications in nanoelectronics. However, for industrial purpose, graphene has to be supported by a substrate. We focus here on the graphene-on-SiC system to discuss how the SiC substrate interacts with the graphene layer and to show the effect of the interface on graphene atomic and electronic structures.
We probe the local inhomogeneities of the electronic properties of graphene at the nanoscale using scanning probe microscopy techniques. First, we focus on the study of the electronic inhomogeneities caused by the graphene-substrate interaction in graphene samples exfoliated on silicon oxide. We find that charged impurities, present in the graphene-substrate interface, perturb the carrier density significantly and alter the electronic properties of graphene. This finding helps to understand the observed device-to-device variation typically observed in graphene-based electronic devices. Second,…
Graphene revealed a number of unique properties beneficial for electronics, including exceptionally high electron mobility and widely tunable Fermi level. However, graphene does not have an electron energy band gap, which presents a serious hurdle for its applications in digital electronics. A possible route for practical use of graphene in electronics is utilization of its exceptionally high thermal conductivity and electron current conducting properties. This invited review outlines the thermal properties of graphene and describes prospective graphene technologies that are not affected by th…
Using full potential density functional theory calculations we have investigated the structural and electronic properties of graphene and some other graphene-like materials, viz., monolayer of SiC, GeC, BN, AlN, GaN, ZnO, ZnS and ZnSe. We hope, with the advancement of material synthesis techniques, some these new materials will be synthesized in the near future for potential applications in various nano-devices.
Engineering the electronic properties of graphene has triggered great interest for potential applications in electronics and opto-electronics. Here we demonstrate the possibility to tune the electronic transport properties of graphene monolayers and multilayers by functionalisation with fluorine. We show that by adjusting the fluorine content different electronic transport regimes can be accessed. For monolayer samples, with increasing the fluorine content, we observe a transition from electronic transport through Mott variable range hopping in two dimensions to Efros - Shklovskii variable ran…
We investigate the influence of grain boundaries (GBs), line defects (LDs), and chirality on thermal transport in graphene using non-equilibrium Green's functions. At room temperature the ballistic thermal conductance is ~4.2 GW/m^2/K, and single GBs or LDs yield transmission from 50-80% of this value. LDs with carbon atom octagon defects have lower thermal transmission than GBs with pentagon and heptagon defects. We apply our findings to study the thermal conductivity of polycrystalline graphene for practical applications, and find that the type and size of GBs play an important role when gra…
We review progress in developing epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's electronic properties are discussed. Although graphene grown on both polar faces of SiC is addressed, our discussions will focus on graphene grown on the (000-1) C-face of SiC. The unique properties of C-face multilayer epitaxial graphene have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal-stack…
We review thermal properties of graphene and few-layer graphene, and discuss applications of these materials in thermal management of advanced electronics. The intrinsic thermal conductivity of graphene - among the highest of known materials - is dominated by phonons near the room temperature. The examples of thermal management applications include the few-layer graphene heat spreaders integrated near the heat generating areas of the high-power density transistors. It has been demonstrated that few-layer graphene heat spreaders can lower the hot-spot temperature during device operation resulti…
The article presents the work on the investigation of the surface structure as well as electronic and magnetic properties of graphene layer on a lattice matched surface of a ferromagnetic material, Ni(111).
We study the electronic structure of multilayer graphene using a $π$-orbital continuum model with nearest-neighbor intralayer and interlayer tunneling. Using degenerate state perturbation theory, we show that the low-energy electronic structure of arbitrarily stacked graphene multilayers consists of chiral pseudospin doublets with a conserved chirality sum.
Here we report a facile method to generate a high density of point defects in graphene on metal foil and show how the point defects affect the electronic structures of graphene layers. Our scanning tunneling microscopy (STM) measurements, complemented by first principle calculations, reveal that the point defects result in both the intervalley and intravalley scattering of graphene. The Fermi velocity is reduced in the vicinity area of the defect due to the enhanced scattering. Additionally, our analysis further points out that periodic point defects can tailor the electronic properties of gra…
We have investigated the lattice thermal transport across the asymmetric tilt grain boundary between armchair and zigzag graphene by nonequilibrium molecular dynamics (NEMD). We have observed significant temperature drop and ultra-low temperature-dependent thermal boundary resistance. More importantly, we find an unexpected thermal rectification phenomenon. The thermal conductivity and Kapitza conductance is direction-dependent. The effect of thermal rectification could be amplified by increasing the difference of temperature imposed on two sides. Our results propose a promising kind of therma…
Decoupling of the graphene layer from the ferromagnetic substrate via intercalation of sp metal has recently been proposed as an effective way to realize single-layer graphene-based spin-filter. Here, the structural and electronic properties of the prototype system, graphene/Al/Ni(111), are investigated via combination of electron diffraction and spectroscopic methods. These studies are accompanied by state-of-the-art electronic structure calculations. The properties of this prospective Al-intercalation-like system and its possible implementations in future graphene-based devices are discussed…
The successful fabrication of single layer graphene has greatly stimulated the progress of the research on graphene. In this article, focusing on the basic electronic and transport properties of graphene nanoribbons (GNRs), we review the recent progress of experimental fabrication of GNRs, and the theoretical and experimental investigations of physical properties and device applications of GNRs. We also briefly discuss the research efforts on the spin polarization of GNRs in relation to the edge states.
Graphene oxide (GO) flakes have been deposited to bridge the gap between two epitaxial graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers (SB) at the graphene/graphene oxide junctions, as a consequence of the band-gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 $^\circ$C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm$^2$/Vs, rivaling silicon. {\it In situ} local oxidation of patterned epitaxial gr…
Graphene two-dimensional nature combined with today lithography allows to achieve nanoelectronics devices smaller than the Dirac electrons wavelength. Here we show that in these graphene subwavelength nanodevices the electronic quantum transport properties present deep analogies with classical phenomena of subwavelength optics. By introducing the concept of electronic diffraction barrier to represent the effect of constrictions, we can easily describe the rich transport physics in a wealth of nanodevices: from Bethe and Kirchhoff diffraction in graphene slits, to Fabry-Perot interference oscil…
As the thinnest atomic membrane, graphene presents an opportunity to combine geometry, elasticity and electronics at the limits of their validity. The availability of reliable atomistic potentials for graphene allows unprecedented precise simulations of the mechanical response of atomic membranes. Here we describe the transport and electronic structure in the neighbourhood of conical singularities, the elementary excitations of the ubiquitous wrinkled and crumpled graphene that occur in non-epitaxial suspended samples where shear stresses are unavoidable. We use a combination of atomistic mech…
The effect of the SiO$_2$ substrate on a graphene film is investigated using realistic but computationally convenient energy-optimized models of the substrate supporting a layer of graphene. The electronic bands are calculated using density-functional methods for several model substrates. This provides an estimate of the substrate-charge effects on the behaviour of the bands near $E_F$, as well as a variation of the equilibrium distance of the graphene sheet. A model of a wavy graphene layer is examined as a possible candidate for understanding the nature of the minimally conducting states in …
Local electrical imaging using microwave impedance microscope is performed on graphene in different modalities, yielding a rich hierarchy of the local conductivity. The low-conductivity graphite oxide and its derivatives show significant electronic inhomogeneity. For the conductive chemical graphene, the residual defects lead to a systematic reduction of the microwave signals. In contrast, the signals on pristine graphene agree well with a lumped-element circuit model. The local impedance information can also be used to verify the electrical contact between overlapped graphene pieces.
Despite the structures and properties of tilt grain boundaries of graphite surface and graphene have been extensively studied, their effect on the structures and electronic spectra of graphene layers has not been fully addressed. Here we study effects of one-dimensional tilt grain boundaries on structures and electronic spectra of graphene multilayers by scanning tunneling microscopy and spectroscopy. A tilt grain boundary of a top graphene sheet in graphene multilayers leads to a twist between consecutive layers and generates superstructures (Moiré patterns) on one side of the boundary. Our r…
We study how phonon structure manifests itself in the electronic density of states of graphene. A procedure for extracting the value of the electron-phonon renormalization $λ$ is developed. In addition, we identify direct phonon structures. With increasing doping, these structures, along with $λ$, grow in amplitude and no longer display particle-hole symmetry.
In this communication we present together four distinct techniques for the study of electronic structure of solids : the tight-binding linear muffin-tin orbitals (TB-LMTO), the real space and augmented space recursions and the modified exchange-correlation. Using this we investigate the effect of random vacancies on the electronic properties of the carbon hexagonal allotrope, graphene, and the non-hexagonal allotrope, planar T graphene. We have inserted random vacancies at different concentrations, to simulate disorder in pristine graphene and planar T graphene sheets. The resulting disorder, …
We present results of tight binding calculations demonstrating existence of degenerate electronic shells of Dirac Fermions in narrow, charge neutral graphene quantum rings. We predict removal of degeneracy with finite magnetic field. We show, using a combination of tight binding and configuration interaction methods, that by filling a graphene ring with additional electrons this carbon based structure with half-filled shell acquires a finite magnetic moment.
The electronic structure of bilayer graphene is investigated from a resonant Raman study using different laser excitation energies. The values of the parameters of the Slonczewski-Weiss-McClure model for graphite are measured experimentally and some of them differ significantly from those reported previously for graphite, specially that associated with the difference of the effective mass of electrons and holes. The splitting of the two TO phonon branches in bilayer graphene is also obtained from the experimental data. Our results have implications for bilayer graphene electronic devices.
We report first principles investigations of the nonequilibrium transport properties of a Cu(111)|graphene interface. The Cu(111) electrode is found to induce a transmission minimum (TM) located -0.68eV below the Fermi level, a feature originating from the Cu-induced charge transfer resulting in n-type doped graphene with the Dirac point coinciding with the TM. An applied bias voltage shifts the n-graphene TM relative to the pure graphene TM and leads to a distinctive peak in the differential conductance indicating the doping level, a characteristic not observed in pure graphene.
The fabrication of atomically precise structures with designer electronic properties is one of the emerging topics in condensed matter physics. The required level of structural control can either be reached through atomic manipulation using the tip of a scanning tunneling microscope (STM) or by bottom-up chemical synthesis. In this review, we focus on recent progress in constructing novel, atomically precise artificial materials: artificial lattices built through atom manipulation and graphene nanoribbons (GNRs) realized by on-surface synthesis. We summarize the required theoretical background…
First-principles calculation has been performed to investigate the stability and electronic properties of double-layer graphene heterostructure (DLGH). In this system, two graphene layers are separated by hexagonal boron-nitride (h-BN) layers which work as a insulating barrier. Our results show that the stability of the system is determined by the atomistic configurations between graphene and its adjacent h-BN layer. Among different stacking sequences, Ab-stacking is most stable. Since the inserted h-BN layers modulate the on-site energies for carbon atoms of graphene layers, the electronic st…
Graphene functionalization by hydrogen and fluorine has been proposed as a route to modulate its reactivity and electronic properties. However, until now, proposed systems present degradation and limited hydrogen adsorption capacity. In this study, combining first-principles calculations based on density functional theory (DFT) and reactive molecular dynamics, we analyze the tuning of hydrogen adsorption and electronic properties in fluorinated and hydrogenated monolayer graphenes. Our results indicate that fluorine adsorption promotes stronger carbon$-$hydrogen bonds. By changing the concentr…
The electronic structure and magnetic properties of the graphene/Fe/Ni(111) system were investigated via combination of the density functional theory calculations and electron-spectroscopy methods. This system was prepared via intercalation of thin Fe layer (1 ML) underneath graphene on Ni(111) and its inert properties were verified by means of photoelectron spectroscopy. Intercalation of iron in the space between graphene and Ni(111) changes drastically the magnetic response from the graphene layer that is explained by the formation of the highly spin-polarized $3d_{z^2}$ quantum-well state i…
We investigate electronic transport property of a graphene monolayer covered by a graphene nanoribbon. We demonstrate that electronic transmission of a monolayer can be reduced when covered by a nanoribbon. The transmission reduction occurs at different energies determined by the width of nanoribbon. We explain the transmission reduction by using interference between wavefunctions in the monolayer and the nanoribbon. Furthermore, we show the transmission reduction of a monolayer is combinable when covered by more than one nanoribbon and propose a concept of "combination of control" for nano-ap…
We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries, and can be used t…
We report on electronic properties of graphene synthesized by chemical vapor deposition (CVD) on copper then transferred to SiO2/Si. Wafer-scale (up to 4 inches) graphene films have been synthesized, consisting dominantly of monolayer graphene as indicated by spectroscopic Raman mapping. Low temperature transport measurements are performed on micro devices fabricated from such CVD graphene, displaying ambipolar field effect (with on/off ratio ~5 and carrier mobilities up to ~3000 cm^2/Vs) and "half-integer" quantum Hall effect, a hall-mark of intrinsic electronic properties of monolayer graphe…
