We introduce a model for amorphous grain boundaries in graphene, and find that stable structures can exist along the boundary that are responsible for local density of states enhancements both at zero and finite (~0.5 eV) energies. Such zero energy peaks in particular were identified in STS measurements [J. Červenka, M. I. Katsnelson, and C. F. J. Flipse, Nature Physics 5, 840 (2009)], but are not present in the simplest pentagon-heptagon dislocation array model [O. V. Yazyev and S. G. Louie, Physical Review B 81, 195420 (2010)]. We consider the low energy continuum theory of arrays of dislocations in graphene and show that it predicts localized zero energy states. Since the continuum theory is based on an idealized lattice scale physics it is a priori not literally applicable. However, we identify stable dislocation cores, different from the pentagon-heptagon pairs, that do carry zero energy states. These might be responsible for the enhanced magnetism seen experimentally at graphite grain boundaries.
Stacking domain boundaries occur in Van der Waals heterostacks whenever there is a twist angle or lattice mismatch between subsequent layers. Not only can these domain boundaries host topological edge states, imaging them has been instrumental to determine local variations in twisted bilayer graphene. Here, we analyse the mechanisms causing stacking domain boundary contrast in Bright Field Low-Energy Electron Microscopy (BF-LEEM) for both graphene on SiC, where domain boundaries are caused by strain and for twisted few layer graphene. We show that when domain boundaries are between the top two…
We study how low-energy charge carriers scatter off periodic and linear graphene grain boundaries oriented along the zigzag direction with a periodicity three times greater than that of pristine graphene. These defects map the two Dirac points into the same position, and thus allow for intervalley scattering to occur. Starting from graphene's first-neighbor tight-binding model we show how can we compute the boundary condition seen by graphene's massless Dirac fermions at such grain boundaries. We illustrate this procedure for the 3-periodic pentagon-only grain boundary, and then work out the l…
Graphene, a two-dimensional honeycomb lattice of carbon atoms, is of great interest in (opto)electronics and plasmonics and can be obtained by means of diverse fabrication techniques, among which chemical vapor deposition (CVD) is one of the most promising for technological applications. The electronic and mechanical properties of CVD-grown graphene depend in large part on the characteristics of the grain boundaries. However, the physical properties of these grain boundaries remain challenging to characterize directly and conveniently. Here, we show that it is possible to visualize and investi…
Ab initio calculations indicate that while the electronic states introduced by grain boundaries in graphene are only partially confined to the defect core, a domain boundary introduces states near the Fermi level that are very strongly confined to the core of the defect, and that display a ferromagnetic ground state. The domain boundary is fully immersed within the graphene matrix, hence this magnetic state is protected from reconstruction effects that have hampered experimental detection in the case of ribbon edge states. Furthermore, our calculations suggest that charge transfer between one-…
Distribution of charge induced by a gate voltage in a graphene strip is investigated. We calculate analytically the charge profile and demonstrate a strong(macroscopic) charge accumulation along the boundaries of a micrometers-wide strip. This charge inhomogeneity is especially important in the quantum Hall regime where we predict the doubling of the number of edge states and coexistence of two different types of such states. Applications to graphene-based nanoelectronics are discussed.
Perturbations of the two dimensional carbon lattice of graphene, such as grain boundaries, have significant influence on the charge transport and mechanical properties of this material. Scanning tunneling microscopy measurements presented here show that localized states near the Dirac point dominate the local density of states of grain boundaries in graphene grown by chemical vapor deposition. Such low energy states are not reproduced by theoretical models which treat the grain boundaries as periodic dislocation-cores composed of pentagonal-heptagonal carbon rings. Using ab initio calculations…
We have investigated by means of first principles calculations the structural and electronic properties of hydrogenated graphene structures with distinct grain boundary defects. Our total energy results reveal that the adsorption of a single H is more stable at grain boundary defect. The electronic structure of the grains boundaries upon hydrogen adsorption have been examined. Further total energy calculations indicate that the adsorption of two H on two neighbor carbons, forming a basic unit of graphane, is more stable at the defect region. Therefore, we expect that these extended defects wou…
Electronic states confined to zero angle grain boundaries in single layer graphene are analyzed using topological band theoretic arguments. We identify a hidden chiral symmetry which supports symmetry protected zero modes in projected bulk gaps. These branches occupy a finite fraction of the interface-projected Brillouin zone and terminate at bulk gap closures, manifesting topological transitions in the occupied manifolds of the bulk systems that are joined at an interface. These features are studied by numerical calculations on a tight binding lattice and by analysis of the geometric phases o…
As most materials available in macroscopic quantities, graphene appears in a polycrystalline form and thus contains grain boundaries. In the present work, the effect of uniaxial strain on the electronic transport properties through graphene grain boundaries is investigated using atomistic simulations. A systematic picture of the transport properties with respect to the strain and the lattice symmetry of graphene domains on both sides of the boundary is provided. In particular, it is shown that the strain engineering can be used to open a finite transport gap in all graphene systems where two d…
Electronic, transport, and spin properties of grain boundaries (GBs) are investigated in electrostatically doped graphene at finite electron densities within the Hartree and Hubbard approximations. We demonstrate that depending on the character of the GBs, the states residing on them can have a metallic character with a zero group velocity or can be fully populated losing the ability to carry a current. These states show qualitatively different features in charge accumulation and spin polarization. We also demonstrate that the semiclassical Thomas-Fermi approach provides a satisfactory approxi…
Grain boundaries in epitaxial graphene on the SiC(000$\bar{1}$) substrate are studied using scanning tunneling microscopy and spectroscopy. All investigated small-angle grain boundaries show pronounced out-of-plane buckling induced by the strain fields of constituent dislocations. The ensemble of observations allows to determine the critical misorientation angle of buckling transition $θ_c = 19 \pm~2^\circ$. Periodic structures are found among the flat large-angle grain boundaries. In particular, the observed $θ= 33\pm2^\circ$ highly ordered grain boundary is assigned to the previously propose…
We calculate the density of states of electron-hole excitations in a superconductor/normal-metal/superconductor (SNS) junction in graphene, in the long-junction regime that the superconducting gap is much larger than the Thouless energy. If the normal region is undoped, the excitation spectrum consists of neutral modes that propagate along the boundaries - transporting energy but no charge. These ``Andreev modes'' are a coherent superposition of electron states from the conduction band and hole states from the valence band, coupled by specular Andreev reflection at the superconductor. The lowe…
In light of the race towards macroscale superlubricity of graphitic contacts, the effect of grain boundaries on their frictional properties becomes of central importance. Here, we elucidate the unique frictional mechanisms characterizing topological defects along typical grain boundaries that can vary from being nearly flat to highly corrugated, depending on the boundary misfit angle. We find that frictional energy dissipation over grain boundaries can originate from variations of compressibility along the surface, heat produced during defect (un)buckling events, and elastic energy storage in …
Chemical vapor deposition (CVD) on Cu foil is one of the most promising methods to produce graphene samples despite of introducing numerous grain boundaries into the perfect graphene lattice. A rich variety of GB structures can be realized experimentally by controlling the parameters in the CVD method. Grain boundaries contain non-hexagonal carbon rings (4,5,7,8 membered rings) and vacancies in various ratios and arrangements. Using wave packet dynamic (WPD) simulations and tight-binding electronic structure calculations, we have studied the effect of the structure of GBs on the transport prop…
Graphene grain boundaries have attracted interest for their ability to host nearly dispersionless electronic bands and magnetic instabilities. Here, we employ quantum transport and universal conductance fluctuations (UCF) measurements to experimentally demonstrate a spontaneous breaking of time reversal symmetry (TRS) across individual GBs of chemical vapour deposited graphene. While quantum transport across the GBs indicate spin-scattering-induced dephasing, and hence formation of local magnetic moments, below $T\lesssim 4$ K, we observe complete lifting of TRS at high carrier densities ($n \…
The reason why the half-integer quantum Hall effect (QHE) is suppressed in graphene grown by chemical vapor deposition (CVD) is unclear. We propose that it might be connected to extended defects in the material and present results for the quantum Hall effect in graphene with [0001] tilt grain boundaries connecting opposite sides of Hall bar devices. Such grain boundaries contain 5-7 ring complexes that host defect states that hybridize to form bands with varying degree of metallicity depending on grain boundary defect density. In a magnetic field, edge states on opposite sides of the Hall bar …
Epitaxial graphene is grown on a non-polar n+ 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moiré patterns of different spatial periodicities are found, and we found that as the wavelength increases, so does the amplitude of the modulations. This relationship reveals information about the interplay between the energy required to bend graphene and the interaction energy, i.e. van der Waals energy, with the graphene layer below. Our experiments are supported by theoretic…
The strong interest in graphene has motivated the scalable production of high quality graphene and graphene devices. Since large-scale graphene films synthesized to date are typically polycrystalline, it is important to characterize and control grain boundaries, generally believed to degrade graphene quality. Here we study single-crystal graphene grains synthesized by ambient CVD on polycrystalline Cu, and show how individual boundaries between coalescing grains affect graphene's electronic properties. The graphene grains show no definite epitaxial relationship with the Cu substrate, and can c…
We show that Friedel charge oscillation near an interface opens a gap at the Fermi energy for electrons with wave vectors perpendicular to the interface. If the Friedel gaps on two sides of the interface are different, a nonequlibrium effect - shifting of these gaps under bias - leads to asymmetric transport upon reversing the bias polarity. The predicted transport asymmetry is revealed by scanning tunneling potentiometry at monolayer-bilayer interfaces in epitaxial graphene on SiC (0001). This intriguing interfacial transport behavior opens a new avenue towards novel quantum functions such as…
We use numerical simulations to predict peculiar magnetotransport fingerprints in polycrystalline graphene, driven by the presence of grain boundaries of varying size and orientation. The formation of Landau levels is shown to be restricted by the polycrystalline morphology, requiring the magnetic length to be smaller than the average grain radius. The nature of localization is also found to be unusual, with strongly localized states at the center of Landau levels (including the usually highly robust zero-energy state) and extended electronic states lying between Landau levels. These extended …
The magnetotransport properties of antidot lattices containing artificially designed grain boundaries have been measured. We find that the grain boundaries broaden the commensurability resonances and displace them anisotropically. These phenomena are unexpectedly weak but differ characteristically from isotropic, Gaussian disorder in the antidot positions. The observations are interpreted in terms of semiclassical trajectories which tend to localize along the grain boundaries within certain magnetic field intervals. Furthermore, our results indicate how the transport through superlattices gene…
Pristine bilayer graphene behaves in some instances as an insulator with a transport gap of a few meV. This behaviour has been interpreted as the result of an intrinsic electronic instability induced by many-body correlations. Intriguingly, however, some samples of similar mobility exhibit good metallic properties, with a minimal conductivity of the order of $2e^2/h$. Here we propose an explanation for this dichotomy, which is unrelated to electron interactions and based instead on the reversible formation of boundaries between stacking domains (`solitons'). We argue, using a numerical analysi…
Grain boundaries (GBs) are ubiquitous in polycrystalline graphene materials obtained by various growth methods. It has been shown previously that considerable electrical transport gap can be opened by grain boundaries. On the other hand, polycrystalline graphene with GBs is an atomically thin membrane that can sustain extraordinary amount of strain. Here, by using atomistic quantum transport numerical simulations, we examine modulation of electrical transport properties of graphene GBs. The results indicate the modulation of transport gap and electrical conductance strongly depends on the topo…
We investigate the electronic structure of terraces of single layer graphene (SLG) by scanning tunneling microscopy (STM) on samples grown by thermal decomposition of 6H-SiC(0001) crystals in ultra-high vacuum. We focus on the perturbations of the local density of states (LDOS) in the vicinity of edges of SLG terraces. Armchair edges are found to favour intervalley quasiparticle scattering, leading to the (\surd3\times\surd3)R30° LDOS superstructure already reported for graphite edges and more recently for SLG on SiC(0001). Using Fourier transform of LDOS images, we demonstrate that the intrin…
Graphene grain boundaries are known to affect phonon transport and thermal conductivity, suggesting that they may be used to engineer the phononic properties of graphene. Here, the effect of two buckled grain boundaries on long-wavelength flexural acoustic phonons has been investigated as a function of angle of incidence using molecular dynamics. The flexural acoustic mode has been chosen due to its importance to thermal transport. It is found that the transmission through the boundaries is strongly suppressed for incidence angles close to 35$^\circ$. Also, the grain boundaries are found to ac…
Grain boundaries with dangling bonds (DBGB) in graphene are studied by atomistic Monte Carlo and molecular dynamics simulations in combination with density functional (SIESTA) calculations. The most stable configurations are selected and their structure is analyzed in terms of grain boundary dislocations. It is shown that the grain boundary dislocation with the core consisting of pentagon, octagon and heptagon (5-8-7 defect) is a typical structural element of DBGB with relatively low energies. Electron energy spectrum and magnetic properties of the obtained DBGB are studied by density function…
We present the results of million atom electronic quantum transport calculations for graphene nanoconstrictions with edges that are smooth apart from atomic scale steps. We find conductances quantized in integer multiples of 2e2/h and a plateau at ~0.5*2e2/h as in recent experiments [Tombros et al., Nature Physics 7, 697 (2011)]. We demonstrate that, surprisingly, conductances quantized in integer multiples of 2e2/h occur even for strongly non-adiabatic electron backscattering at the stepped edges that lowers the conductance by one or more conductance quanta below the adiabatic value. We also …
Domain walls separating regions of AB and BA interlayer stacking in bilayer graphene have attracted attention as novel examples of structural solitons, topological electronic boundaries, and nanoscale plasmonic scatterers. We show that strong coupling of domain walls to surface plasmons observed in infrared nanoimaging experiments is due to topological chiral modes confined to the walls. The optical transitions among these chiral modes and the band continua enhance the local ac conductivity, which leads to plasmon reflection by the domain walls. The imaging reveals two kinds of plasmonic stand…
Recent experiments [L. Ju et al., Nature, 2015, 520, 650] confirm the existence of gapless states at domain walls created in gated bilayer graphene, when the sublattice stacking is changed from AB to BA. These states are significant because they are topologically protected, valley-polarized and give rise to conductance along the domain wall. Current theoretical models predict the appearance of such states only at domain walls, which preserve the sublattice order. Here we show that the appearance of the topologically protected states in stacking domain walls can be much more common in bilayer g…
The electronic energy spectrum of graphene electron subjected to a homogeneous magnetic field in the presence of a charged Coulomb impurity is studied analytically within two-dimensional Dirac-Weyl picture by using variational approach. The variational scheme we used is just based on utilizing the exact eigenstates of two-dimensional Dirac fermion in the presence of a uniform magnetic field as a basis for determining analytical energy eigenvalues in the presence of an attractive/repulsive charged Coulomb impurity. This approach allows us to determine under which conditions bound state solution…
We investigate the low-energy electronic transport across grain boundaries in graphene ribbons and infinite flakes. Using the recursive Green's function method, we calculate the electronic transmission across different types of grain boundaries in graphene ribbons. We show results for the charge density distribution and the current flow along the ribbon. We study linear defects at various angles with the ribbon direction, as well as overlaps of two monolayer ribbon domains forming a bilayer region. For a class of extended defect lines with periodicity 3, an analytic approach is developed to st…
We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries, and can be used t…
Despite the structures and properties of tilt grain boundaries of graphite surface and graphene have been extensively studied, their effect on the structures and electronic spectra of graphene layers has not been fully addressed. Here we study effects of one-dimensional tilt grain boundaries on structures and electronic spectra of graphene multilayers by scanning tunneling microscopy and spectroscopy. A tilt grain boundary of a top graphene sheet in graphene multilayers leads to a twist between consecutive layers and generates superstructures (Moiré patterns) on one side of the boundary. Our r…
Topological defects in graphene, dislocations and grain boundaries, are still not well understood despites the considerable number of experimental observations. We introduce a general approach for constructing dislocations in graphene characterized by arbitrary Burgers vectors as well as grain boundaries, covering the whole range of possible misorientation angles. By using ab initio calculations we investigate thermodynamic and electronic properties of these topological defects, finding energetically favorable symmetric large-angle grain boundaries, strong tendency towards out-of-plane deforma…
The effects of Au grains on graphene conduction and doping are investigated in this report. To obtain a clean Au-graphene contact, Au grains are deposited over graphene at elevated temperature and in high vacuum, before any chemical processing. The bulk and the effective contact resistance versus gate voltage demonstrate that Au grains cause p-doping in graphene. The Fermi level shift is in agreement with first principles calculations, but the equilibrium separation we find between the graphene and the top-most Au layer is larger than predicted. Nonequilibrium electron transport displays giant…
In the presence of crossed electric and magnetic fields, a graphene ribbon has chiral states running along sample edges and along boundaries between $p$-doped and $n$-doped regions. We here consider the scattering of edge states into interface states, which takes place whereever the $pn$ interface crosses the sample boundary, as well as the reverse process. For a graphene ribbon with armchair boundaries, the evolution of edge states into interface states and {\em vice versa} is governed by the conservation of valley isospin. Although valley isospin is not conserved in simplified models of a ri…
Semi-metals are characterized by nodal band structures that give rise to exotic electronic properties. The stability of Dirac semi-metals, such as graphene in two spatial dimensions (2D), requires the presence of lattice symmetries, while akin to the surface states of topological band insulators, Weyl semi-metals in three spatial dimensions (3D) are protected by band topology. Here we show that in the bulk of topological band insulators, self-organized topologically protected semi-metals can emerge along a grain boundary, a ubiquitous extended lattice defect in any crystalline material. In add…
Transport properties of 2D materials especially close to their boundary has received much attention after the successful fabrication of graphene and other fascinating materials afterwards. While most previous work is devoted to the conventional lead-device-lead setup with a finite size center area, this project investigates real space transport properties of infinite and semi-infinite 2D system under the framework of Non-equilibrium Green function. The commonly used method of calculating the Green function by inverting a matrix in the real space directly can be unstable in dealing with large s…
In two-dimensional van der Waals (vdWs) materials, the relative twist angle between adjacent layers not only controls their electronic properties, but also determines their stacking energy. This effect makes it much easier to realize energetically favorable configurations of the vdWs materials, for example, Bernal-stacked structure of bilayer graphene. Here we demonstrate that we can controllably tailor adhesive energy landscape of graphene nanostructures on graphene and stabilize the system with tunable twist angle by using a one-dimensional tilt grain boundary (GB). The area ratio with diffe…
Decoupling the effects of ripples from tensile strain on the thermal conductivity of graphene and understanding the role of curvature on the thermal conductivity of graphene with grain boundaries
We reveal that phononic thermal transport in graphene is not immune to grain boundaries (GBs) aligned along the direction of the temperature gradient. Non-equilibrium molecular dynamics simulations uncover a large reduction in the phononic thermal conductivity ($κ_p$) along linear ultra-narrow GBs comprising periodically-repeating pentagon-heptagon dislocations. Green's function calculations and spectral energy density analysis indicate that $κ_p$ is the complex manifestation of the periodic strain field, which behaves as a reflective diffraction grating with both diffuse and specular phonon r…
The technical breakthrough in synthesizing graphene by chemical vapor deposition methods (CVD) has opened up enormous opportunities for large-scale device applications. In order to improve the electrical properties of CVD graphene grown on copper (Cu-CVD graphene), recent efforts have focussed on increasing the grain size of such polycrystalline graphene films to 100 micrometers and larger. While an increase in grain size and hence, a decrease of grain boundary density is expected to greatly enhance the device performance, here we show that the charge mobility and sheet resistance of Cu-CVD gr…
The buckling of graphene nano-ribbons containing a grain boundary is studied using atomistic simulations where free and supported boundary conditions are invoked. We found that when graphene contains a small angle grain boundary the buckling strains are larger when the ribbons with free (supported) boundary condition are subjected to compressive tension parallel (perpendicular) to the grain boundary. The shape of the deformations of the buckled graphene nanoribbons depends on the boundary conditions and the presence of the grain boundary and the direction of applied in-plane compressive tensio…
We study charge and spin transport along grain boundaries in single layer graphene in the presence of a quantizing magnetic field. Transport states in a grain boundary are produced by hybridization of Landau zero modes with interfacial states. In selected energy regimes quantum Hall edge states can be deflected either fully or partially into grain boundary states. The degree of edge state deflection is studied in the nonlocal conductance and in the shot noise. We also consider the possibility of grain boundaries as gate-switchable spin filters, a functionality enabled by counterpropagating tra…
We investigate the influence of grain boundaries (GBs), line defects (LDs), and chirality on thermal transport in graphene using non-equilibrium Green's functions. At room temperature the ballistic thermal conductance is ~4.2 GW/m^2/K, and single GBs or LDs yield transmission from 50-80% of this value. LDs with carbon atom octagon defects have lower thermal transmission than GBs with pentagon and heptagon defects. We apply our findings to study the thermal conductivity of polycrystalline graphene for practical applications, and find that the type and size of GBs play an important role when gra…
The properties of polycrystalline materials are often dominated by the size of their grains and by the atomic structure of their grain boundaries. These effects should be especially pronounced in 2D materials, where even a line defect can divide and disrupt a crystal. These issues take on practical significance in graphene, a hexagonal two-dimensional crystal of carbon atoms; Single-atom-thick graphene sheets can now be produced by chemical vapor deposition on up to meter scales, making their polycrystallinity almost unavoidable. Theoretically, graphene grain boundaries are predicted to have d…
In this paper a systematic examination of graphene/hexagonal boron nitride (g/hBN) bilayers is presented, through a recently developed two-dimensional phase field crystal model that incorporates out-of-plane deformations. The system parameters are determined by closely matching the stacking energies and heights of graphene/hBN bilayers to those obtained from existing quantum-mechanical density functional theory calculations. Out-of-plane deformations are shown to reduce the energies of inversion domain boundaries in hBN, and the coupling between graphene and hBN layers leads to a bilayer defec…
We study heat transport across individual grain boundaries in suspended monolayer graphene using extensive classical molecular dynamics (MD) simulations. We construct bicrystalline graphene samples containing grain boundaries with symmetric tilt angles using the two-dimensional phase field crystal method and then relax the samples with MD. The corresponding Kapitza resistances are then computed using nonequilibrium MD simulations. We find that the Kapitza resistance depends strongly on the tilt angle and shows a clear correlation with the average density of defects in a given grain boundary, b…
One of severe limits of graphene nanoribbons (GNRs) in future applications is that zigzag GNRs (ZGNRs) are gapless, so cannot be used in field effect transistors (FETs). In this paper, using tight-binding approach and first principles method, we derived and proved a general edge (boundary) condition for the opening of a significant bandgap in ZGNRs with defective edge structures. The proposed semiconducting GNRs have some interesting properties including the one that they can be embedded and integrated in a large piece of graphene without the need of completely cutting them out. We also demons…
We perform a MonteCarlo simulation in order to study the connection between the morphology and the transport properties of grain boundaries (GBs) in graphene. We explore the configurational space of GBs to generate ensembles of realistic models of disordered interfaces between graphene misoriented domains. Among other observables, transmission across GBs has been probed all along the simulation, thus making us able to establish a connection between averaged transmission and the topological invariant of GBs, the misorientation angle. We extend to disordered GBs the remarkable result that the lo…
The physical processes occurring in the presence of disorder: point defects, grain boundaries, etc. may have detrimental effects on the electronic properties of graphene. Here we present an approach to reveal the grain structure of graphene by the selective oxidation of defects and subsequent atomic force microscopy analysis. This technique offers a quick and easy alternative to different electron microscopy and diffraction methods and may be used to give quick feedback on the quality of graphene samples grown by chemical vapor deposition.
Graphene has drawn wide attention due to its exceptional thermal conductivity but complete understanding of thermal characteristics of polycrystalline graphene is still elusive to date. For the first time, herein, we have systematically studied the effect of temperature on the thermal conductance behavior of polycrystalline graphene for a range of grain sizes and grain boundary types, by using non-equilibrium molecular dynamics simulations. It is noted that increasing the tempera-ture remarkably enhances thermal boundary conductance (Kapitza conductance) across grain boundaries while it deteri…
The utilization of large-area graphene grown by chemical vapour deposition (CVD) is crucial for the development of scalable spin interconnects in all-spin-based memory and logic circuits. However, the fundamental influence of the presence of multilayer graphene patches and their boundaries on spin dynamics has not been addressed yet, which is necessary for basic understanding and application of robust spin interconnects. Here, we report universal spin transport and dynamic properties in specially devised single layer, bi-layer, and tri-layer graphene channels and their layer boundaries and fol…
We investigate the scattering of long-wavelength flexural phonons against grain boundaries in graphene using molecular dynamics simulations. Three symmetric tilt grain boundaires are considered: one with a misorientation angle of $17.9^\circ$ displaying an out-of-plane buckling 1.5 nm high and 5 nm wide, one with a misorientation angle of $9.4^\circ$ and an out-of-plane buckling 0.6 nm high and 1.7 nm wide, and one with a misorientation angle of $32.2^\circ$ and no out-of-plane buckling. At the flat grain boundary, the phonon transmission exceeds 95 % for wavelengths above 1 nm. The buckled bo…
The low-temperature thermal conductivity in polycrystalline graphene is theoretically studied. The contributions from three branches of acoustic phonons are calculated by taking into account scattering on sample borders, point defects and grain boundaries. Phonon scattering due to sample borders and grain boundaries is shown to result in a $T^α$-behaviour in the thermal conductivity where $α$ varies between 1 and 2. This behaviour is found to be more pronounced for nanosized grain boundaries. PACS: 65.80.Ck, 81.05.ue, 73.43.Cd
Observation of Unconventional Ferroelectricity in Non-Moir'\e Graphene on Hexagonal Boron Nitride Boundaries and Interfaces
The University of Hong Kong（香港大学）；HK Institute of Quantum Science & Technology, The University of Hong Kong（香港大学量子科学与技术研究所）；National Institute for Materials Science（物质材料研究机构）
We report on the formation process of skyrmion lattice (SkL) domain boundaries in FeGe using Lorentz transmission electron microscopy and small-angle electron diffraction. We observed that grain boundaries and edges play an important role in the formation of SkL domain boundaries; The SkL domain boundary is stabilized at the intersection of two grains. A micromagnetic simulation using the Landau-Lifshitz-Gilbert equation revealed that the SkL domains separated by a boundary represent the lowest energy configuration. Conversely, in a wide area, SkL domain boundaries were not formed and SkL doma…
