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arXiv 1006.2128cond-mat.mes-hallcond-mat.str-el
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SNS结阵列中的非相干多次Andreev反射

Incoherent multiple Andreev reflection in an array of SNS junctions

N. M. Chtchelkatchev

摘要:

近年来,人们在实验上发现了许多与非相干MAR有关的有趣效应,但只有少数得到了理论上的解释。例如,如果在线性阵列的边缘处的电压是$V$,则电流-电压特性中的子振子结构不仅出现在通常的非稳态约瑟夫森效应位置$V_n=2Δ/n$(其中$n$是整数)处,而且还出现在$V_n$之外的电压处。在这封信中完成了一个肮脏的SNS结阵列的电子输运的描述步骤。结果表明,subgarmonic结构可能确实出现在“不寻常”的电压。

英文摘要:

Last years many interesting effects related to incoherent MAR have been experimentally found, but only few of them were theoretically explained. It was shown, for example, that if the voltage at the edges of a linear array is $V$ then subgarmonic structures in the current -voltage characteristics appear not only at usual for nonstationary Josephson effect positions, $V_n=2Δ/n$, where $n$ is integer, but also at voltages other than $V_n$. A step towards description of electron transport in a dirty array of SNS junctions is done in this letter. It is shown that subgarmonic structures may indeed appear at ``unusual'' voltages.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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