双浮栅存储器保持特性的数值方法
Numerical approach for retention characteristics of double floating-gate memories
摘要：
我们报告的数值研究中，双浮栅（DFG）结构的存储器特性进行了比较，传统的单浮栅结构，包括两个单元之间的干扰效应。我们发现，DFG结构的优点是其较长的保留时间，缺点是其较小的阈值电压漂移。我们还提供了一个解析形式的充电能量，包括干扰效应。
英文摘要：
We report on a numerical investigation in which memory characteristics of double floating-gate (DFG) structure were compared to those of the conventional single floating-gate structure, including an interference effect between two cells. We found that the advantage of the DFG structure is its longer retention time and the disadvantage is its smaller threshold voltage shift. We also provide an analytical form of charging energy including the interference effect.
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