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arXiv 1003.2267cond-mat.str-elcond-mat.supr-con
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Zn杂质对La2-xSrxCuO4准粒子散射影响的角分辨光电子能谱研究

Zn-impurity effects on quasi-particle scattering in La2-xSrxCuO4 studied by angle-resolved photoemission spectroscopy

T. Yoshida, Seiki Komiya, X. J. Zhou, K. Tanaka, A. Fujimori, Z. Hussain, Z. -X. Shen, Yoichi Ando, H. Eisaki, S. Uchida

摘要:

利用角分辨光电子能谱(Angle-resolved photoemission,AES)研究了Zn掺杂对La 2-xSrxCuO 4(LSCO)低能电子结构的影响. Zn杂质引起的动量分布曲线(MDC)中准粒子(QP)宽度的增加在整个费米面上近似各向同性,并且在费米能级(EF)附近与能量无关。MDC宽度的增加与由于Zn杂质而导致的剩余电阻率的增加一致,如果我们假设载流子数为1-x(x=0.17)并且Zn杂质是接近么正性极限的潜在散射体。对于x=0.03,剩余电阻率被认为是高于预期的MDC宽度,并讨论了周围的Zn杂质引起的反铁磁波动的影响。在x=0.17时,(pi,0)附近的谱的前沿相对于掺Zn的EF向更高的能量方向移动,表明超导能隙减小.

英文摘要:

Angle-resolved photoemission measurements were performed on Zn-doped La2-xSrxCuO4 (LSCO) to investigate the effects of Zn impurities on the low energy electronic structure. The Zn-impurity-induced increase in the quasi-particle (QP) width in momentum distribution curves (MDC) is approximately isotropic on the entire Fermi surface and energy-independent near the Fermi level (EF). The increase in the MDC width is consistent with the increase in the residual resistivity due to the Zn impurities if we assume the carrier number to be 1-x for x=0.17 and the Zn impurity to be a potential scatterer close to the unitarity limit. For x=0.03, the residual resistivity is found to be higher than that expected from the MDC width, and the effects of antifferomagnetic fluctuations induced around the Zn impurities are discussed. The leading edges of the spectra near (pi,0) for x=0.17 are shifted toward higher energies relative to EF with Zn substitution, indicating a reduction of the superconducting gap.

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