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arXiv 1002.2330cond-mat.mtrl-scicond-mat.stat-mech
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石墨烯中缺陷稀系综的子晶格有序

Sublattice ordering in a dilute ensemble of defects in graphene

V. V. Cheainov, O. Syljuasen, B. L. Altshuler, V. I. Fal'ko

摘要:

石墨烯中的缺陷,如空位或吸附剂附着在碳上,可能会优先占据其两个子晶格之一的位置,从而打破全局晶格对称性。这导致在电子光谱中打开一个缺口。我们表明,这样的亚晶格有序可以自发地发生在一个稀系综缺陷,由于它们之间的电子介导的长程相互作用。因此,亚晶格有序域可以形成,具有二维拓扑绝缘体的电子特性。

英文摘要:

Defects in graphene, such as vacancies or adsorbents attaching themselves to carbons, may preferentially take positions on one of its two sublattices, thus breaking the global lattice symmetry. This leads to opening a gap in the electronic spectrum. We show that such a sublattice ordering may spontaneously occur in a dilute ensemble defects, due to the long-range interaction between them mediated by electrons. As a result sublattice-ordered domains may form, with electronic properties characteristic of a two-dimensional topological insulator.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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