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arXiv 1002.0842cond-mat.supr-concond-mat.mtrl-sci
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超导体-拓扑绝缘体界面的邻近效应

Proximity effect at the superconductor - topological insulator interface

Tudor D. Stanescu, Jay D. Sau, Roman M. Lutchyn, S. Das Sarma

摘要:

从微观模型出发,研究了与s波超导体接触的拓扑绝缘体的激发谱,并建立了一个有效的邻近效应低能模型。在狄拉克锥顶点附近,描述局域在界面处的状态的有效模型很好地近似于狄拉克电子经历超导s波配对的模型。远离锥顶,诱导的配对电位发展的p波分量的大小敏感的接口的结构。观察诱导的s波超导性可能需要调整化学势接近狄拉克点。此外,我们发现,超导体的接近导致一个显着的重整化的原始参数的有效模型描述的拓扑绝缘体的表面状态。

英文摘要:

We study the excitation spectrum of a topological insulator in contact with an s-wave superconductor, starting from a microscopic model, and develop an effective low-energy model for the proximity effect. In the vicinity of the Dirac cone vertex, the effective model describing the states localized at the interface is well approximated by a model of Dirac electrons experiencing superconducting s-wave pairing. Away from the cone vertex, the induced pairing potential develops a p-wave component with a magnitude sensitive to the structure of the interface. Observing the induced s-wave superconductivity may require tuning the chemical potential close to the Dirac point. Furthermore, we find that the proximity of the superconductor leads to a significant renormalization of the original parameters of the effective model describing the surface states of a topological insulator.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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