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arXiv 0912.2233cond-mat.mtrl-sci
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锰氧化物薄膜中点缺陷无序引起的电子不均匀性的直接观察

Direct observation of electronic inhomogeneities induced by point defect disorder in manganite films

M. Sirena, A. Zimmers, N. Haberkorn, E. Kaul, L. B. Steren, J. Lesueur, T. Wolf, Y. Le Gall, J. -J. Grob, G. Faini

摘要:

研究了点缺陷无序对锰氧化物薄膜电子性质的影响。通过导电原子力显微镜(CAFM)进行离子辐照样品电导率的实时映射。CAFM图像显示,由于点缺陷分布的空间波动,具有不同物理性质的样品中的电子不均匀性。随着无序度的增加,导电区域之间的距离增加,金属-绝缘体转变向较低温度转移。这些系统中的输运性质可以用简化模型来解释。样品的饱和磁化强度随辐照剂量的增加而降低,而居里温度保持不变。

英文摘要:

We have investigated the influence of point defect disorder in the electronic properties of manganite films. Real-time mapping of ion irradiated samples conductivity was performed though conductive atomic force microscopy (CAFM). CAFM images show electronic inhomogeneities in the samples with different physical properties due to spatial fluctuations in the point defect distribution. As disorder increases, the distance between conducting regions increases and the metal-insulator transition shifts to lower temperatures. Transport properties in these systems can be interpreted in terms of a percolative model. The samples saturation magnetization decreases as the irradiation dose increases whereas the Curie temperature remains unchanged.

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