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arXiv 0910.4495quant-ph
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通过最优控制校正具有推动离子的量子门中的误差

Correcting errors in a quantum gate with pushed ions via optimal control

U. V. Poulsen, S. Sklarz, D. Tannor, T. Calarco

摘要:

我们详细分析了所谓的“推门”被困离子,引入一个依赖于时间的谐波近似的外部运动。我们将展示如何提取平均保真度的门从所产生的半经典模拟。我们精确地描述和量化了来自量子动力学的所有类型的误差,并首次揭示了离子推力中的轻微非线性会对门操作的绝热性产生巨大影响。通过量子最优控制技术,我们展示了如何抑制每一个由此产生的门错误,以达到一个高保真兼容可扩展的容错量子计算。

英文摘要:

We analyze in detail the so-called "pushing gate" for trapped ions, introducing a time dependent harmonic approximation for the external motion. We show how to extract the average fidelity for the gate from the resulting semi-classical simulations. We characterize and quantify precisely all types of errors coming from the quantum dynamics and reveal for the first time that slight nonlinearities in the ion-pushing force can have a dramatic effect on the adiabaticity of gate operation. By means of quantum optimal control techniques, we show how to suppress each of the resulting gate errors in order to reach a high fidelity compatible with scalable fault-tolerant quantum computing.

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