Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall effect (AHE). Usually, the reported AHE (1) is observable at temperatures above 10 K, (2) exhibits no hysteresis, and (3) changes the sign of slope. We observed a similar Hall resistance in Mn implanted Ge with the Mn concentration as low as 0.004%. We show that the puzzling AHE features can be explained by considering a two-band-like conduction in Ge:Mn.
Helically spin-polarized Dirac fermions (HSDF) in protected topological surface states (TSS) are of high interest as a new state of quantum matter. In three-dimensional (3D) materials with TSS, electronic bulk states often mask the transport properties of HSDF. Recently, the high-field Hall resistance and low-field magnetoresistance indicate that the TSS may coexist with a layered two-dimensional electronic system (2DES). Here, we demonstrate quantum oscillations of the Hall resistance at temperatures up to 50 K in bulk Bi$_2$Se$_3$ with a high electron density $n$ of about $2\!\cdot\!10^{19}$…
A two-segment Fermi-Pasta-Ulam lattices has been investigated by using nonequilibrium molecular dynamics. Here we present an anomalous negative differential thermal resistance (NDTR) that have not been reported in Frenkel-Kontorova and ϕ_4 lattices up to the present. The NDTR disappears at low temperature region. The region of NDTR shifts from the large to the small temperature difference region as the system size increases. Anomalous dependence of NDTR on the temperature can be explained as the negative effect induced by the nonlinear coupling. The explanation can also cover the phenomenon of…
We report the observation of negative nonlocal resistances in multiterminal mesoscopic gold Hall bar structures whose characteristic dimensions are larger than the electron mean-free path. Our results can only be partially explained by a classical diffusive model of the nonlocal transport, and are not consistent with a recently proposed model based on spin Hall effects. Instead, our analysis suggests that a quasiballistic transport mechanism is responsible for the observed negative nonlocal resistance. Based on the sensitivity of our measurements and the spin Hall effect model, we find an uppe…
A comprehensive magnetotransport study including resistivity ($ρ_{xx}$) at various fields, isothermal magnetoresistance and Hall resistivity ($ρ_{xy}$) has been carried out at different temperatures on the Co$_{2}$TiAl Heusler alloy. Co$_{2}$TiAl alloy shows a paramagnetic (PM) to ferromagnetic (FM) transition below the curie temperature (T$_{C}$) $\sim$ 125 K. In the FM region, resistivity and magnetoresistance reveals a spin flip electron-magnon scattering and the Hall resistivity unveils the anomalous Hall resistivity ($ρ_{xy}^{AH}$). Scaling of anomalous Hall resistivity with resistivity e…
The proposal that very small Néel skyrmions can form in SrRuO$_3$/SrIrO$_3$ epitaxial bilayers and that the electric field-effect can be used to manipulate these skyrmions in gated devices strongly stimulated the recent research of SrRuO$_3$ heterostructures. A strong interfacial Dzyaloshinskii-Moriya interaction, combined with the breaking of inversion symmetry, was considered as the driving force for the formation of skyrmions in SrRuO$_3$/SrIrO$_3$ bilayers. Here, we investigated nominally symmetric heterostructures in which an ultrathin ferromagnetic SrRuO$_3$ layer is sandwiched between l…
We calculate the localization corrections to the anomalous Hall conductivity related to the contribution of spin-orbit scattering into the current vertex (side-jump mechanism). We show that in contrast to the ordinary Hall effect, there exists a nonvanishing localization correction to the anomalous Hall resistivity. The correction to the anomalous Hall conductivity vanishes in the case of side-jump mechanism, but is nonzero for the skew scattering. The total correction to the nondiagonal conductivity related to both mechanisms, does not compensate the correction to the diagonal conductivity.
Full Heusler compounds with Cobalt as a primary element show anomalous transport properties owing to the Weyl fermions and broken time-reversal symmetry. We present here the study of anomalous Hall effect (AHE) in Co2FeGe Heusler compound. The experiment reveals anomalous Hall conductivity (AHC) 100 S/cm at room temperature with an intrinsic contribution of 78 S/cm . The analysis of anomalous Hall resistivity suggests the scattering independent intrinsic mechanism dominates the overall behaviour of anomalous Hall resistivity. The first principles calculation reveals that the Berry curvature or…
Despite being known for a long time the anomalous Hall effect still attracts attention because of its complex origins, its connection to topology and because it serves as a useful probe of the magnetic order. Here we study the anomalous Hall effect using automatic high-throughput calculation scheme. We calculate the intrinsic anomalous Hall effect in 2871 ferromagnetic materials. We use these results to study general properties of the anomalous Hall effect such as its dependence on the strength of the spin-orbit coupling or magnetization. We also examine the origin of the anomalous Hall effect…
Materials exhibiting controllable magnetic phase transitions are currently in demand for many spintronics applications. Here we investigate from first principles the electronic structure and intrinsic anomalous Hall, spin Hall and anomalous Nernst response properties of the FeRh metallic alloy which undergoes a thermally driven antiferromagnetic-to-ferromagnetic phase transition. We show that the energy band structures and underlying Berry curvatures have important signatures in the various Hall effects. Specifically, the suppression of the anomalous Hall and Nernst effects in the AFM state an…
Itinerant ferromagnets constitute an important class of materials wherein spin-polarization can affect the electric transport properties in nontrivial ways. One such phenomenon is anomalous Hall effect which depends on the details of the band structure such as the amount of band crossings in the valence band of the ferromagnet. Here, we have found extraordinary anomalous Hall effect in an itinerant ferromagnetic metal LaCrSb3. The rather two-dimensional nature of the magnetic subunit imparts large anisotropic anomalous Hall conductivity of 1250 S/cm at 2K. Our investigations suggest that a str…
Scaling of the anomalous Hall conductivity to longitudinal conductivity, has been observed in the dirty regime of two-dimensional weak and strong localization regions in ultrathin, polycrystalline, chemically disordered, ferromagnetic FePt films. The relationship between electron transport and temperature reveals a quantitatively insignificant Coulomb interaction in these films while the temperature dependent anomalous Hall conductivity experiences quantum correction from electron localization. At the onset of this correction, the low-temperature anomalous Hall resistivity begins to be saturat…
We investigate magnetization dynamics in a spin-Hall oscillator using a direct current measurement as well as conventional microwave spectrum analysis. When the current applies an anti-damping spin-transfer torque, we observe a change in resistance which we ascribe to the excitation of incoherent exchange magnons. A simple model is developed based on the reduction of the effective saturation magnetization, quantitatively explaining the data. The observed phenomena highlight the importance of exchange magnons on the operation of spin-Hall oscillators.
We have analyzed the breakdown of the quantum Hall effect in 1 micrometer wide Hall devices fabricated from an exfoliated monolayer graphene transferred on SiOx. We have observed that the deviation of the Hall resistance from its quantized value is weakly dependent on the longitudinal resistivity up to current density of 5 A/m, where the Hall resistance remains quantized even when the longitudinal resistance increases monotonously with the current. Then a collapse in the quantized resistance occurs while longitudinal resistance keeps its gradual increase. The exponential increase of the conduc…
Magnetic topological materials, which combine magnetism and topology, are expected to host emerging topological states and exotic quantum phenomena. In this study, with the aid of greatly enhanced coercive fields in high-quality nanoflakes of the magnetic Weyl semimetal Co3Sn2S2, we investigate anomalous electronic transport properties that are difficult to reveal in bulk Co3Sn2S2 or other magnetic materials. When the magnetization is antiparallel to the applied magnetic field, the low longitudinal resistance state occurs, which is in sharp contrast to the high resistance state for the paralle…
The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 heterointerface based on the modulation-doped amorphous-LaAlO$_{3}$/SrTiO$_{3}$ heterostructure, which exhibits both high electron mobility exceeding 10000 cm$^{2}$/Vs and low carrier density on the or…
Since 2017, epitaxial graphene has been the base material for the US national standard for resistance. A future avenue of research within electrical metrology is to remove the need for strong magnetic fields, as is currently the case for devices exhibiting the quantum Hall effect. The quantum Hall effect is just one of many research endeavours that revolve around recent quantum physical phenomena like composite fermions, charge density waves, and topological properties [1-2]. New materials, like magnetically doped topological insulators (MTIs), offer access to the quantum anomalous Hall effect…
Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at filling factor i = 2 starting from relatively low magnetic field (between 4 T and 5 T) when temperature was 1.5 K. Precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 microA current throug…
Magnetic induction can be regarded as a negative feedback effect, where the motive-force opposes the change of magnetic flux that generates the motive-force. In artificial electromagnetics emerging from spintronics, however, this is not necessarily the case. By studying the current-induced domain wall dynamics in a cylindrical nanowire, we show that the spin motive-force exerting on electrons can either oppose or support the applied current that drives the domain wall. The switching into the anomalous feedback regime occurs when the strength of the dissipative torque β is about twice the value…
We have performed a metrological characterization of the quantum Hall resistance in a 1 $μ$m wide graphene Hall-bar. The longitudinal resistivity in the center of the $ν=\pm 2$ quantum Hall plateaus vanishes within the measurement noise of 20 m$Ω$ upto 2 $μ$A. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5$ μ$A current) equal to that in conventional semiconductors. The principal limitation of the present experiments are the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise …
Most canted antiferromagnets are also anomalous Hall antiferromagnets (AHE AFMs), i.e. they have an anomalous Hall response and other responses with the same symmetry requirements. We suggest that AHE AFMs are promising materials as hosts for high-temperature quantum anomalous Hall effects. By considering models of two-dimensional (001) perovskite layers with strong spin-orbit coupling that isolates an effective total angular momentum $\tilde{j}= \frac{1}{2}$ subspace of the $t_{2g}$ manifold, we propose a strategy to engineering quantum anomalous Hall antiferromagnets.
We propose a new family of the d0 orbital XY (X = K, Rb, Cs; Y = N, P, As, Sb, Bi) monolayers with abundant and novel topology and valley properties. The KN, RbN, RbP, RbAs, CsP, CsAs, and CsSb monolayers possess remarkable quantum anomalous Hall effect (QAHE). CsSb monolayer also exhibits extraordinary valley QAHE with giant splitting. Moreover, the topological properties of XY monolayers can be effciently tuned by the in-plane strain, owing to the strain-induced band inversion between the px;y and pz orbitals. Our findings suggest that the d0 orbital XY monolayers can be good candidates for …
Transport properties of the good thermoelectric misfit oxide Ca$_3$Co$_4$O$_9$ are examined. In-plane resistivity and Hall resistance measurements were made on epitaxial thin films which were grown on {\it c}-cut sapphire substrates using the pulsed laser deposition technique. Interpretation of the in-plane transport experiments relates the substrate-induced strain in the resulting film to single crystals under very high pressure ($\sim$ 5.5 GPa) consistent with a key role of strong electronic correlation. They are confirmed by the measured high temperature maxima in both resistivity and Hall …
We report an investigation of transverse Hall resistance and longitudinal resistance on Pt thin films sputtered on epitaxial LaCoO$_3$ (LCO) ferromagnetic insulator films. The LaCoO$_3$ films were deposited on several single crystalline substrates [LaAlO$_3$ (LAO), (La,Sr)(Al,Ta)O$_3$ (LSAT), and SrTiO$_3$ (STO)] with (001) orientation. The physical properties of LaCoO$_3$ films were characterized by the measurements of magnetic and transport properties. The LaCoO$_3$ films undergo a paramagnetic to ferromagnetic (FM) transition at Curie temperatures ranging from 40 K to 85 K, below which the …
Diverse processes rely on the viscous flow of polymer solutions through porous media. In many cases, the macroscopic flow resistance abruptly increases above a threshold flow rate in a porous medium---but not in bulk solution. The reason why has been a puzzle for over half a century. Here, by directly visualizing the flow in a transparent 3D porous medium, we demonstrate that this anomalous increase is due to the onset of an elastic instability. We establish that the energy dissipated by the unstable flow fluctuations, which vary across pores, generates the anomalous increase in flow resistanc…
Working with epitaxial films of Fe, we succeeded in independent control of different scattering processes in the anomalous Hall effect. The result appropriately accounted for the role of phonons, thereby clearly exposing the fundamental flaws of the standard plot of the anomalous Hall resistivity versus longitudinal resistivity. A new scaling has been thus established that allows an unambiguous identification of the intrinsic Berry curvature mechanism as well as the extrinsic skew scattering and side-jump mechanisms of the anomalous Hall effect.
The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn$_5$Ge$_3$. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect, and calculated the intrinsic anomalous Hall conductivity from the Berry curvature of the Bloch states using first-principles methods. The intrinsic anomalous Hall conductivity depends linearly on the magnetization, which can be understood from the long wavelength fluctuations of the spin orientation at finite temperatures. The quantitative agreement between theory and exper…
In a magnetic metal, the Hall resistance is generally taken to be the sum of the ordinary Hall resistance and the anomalous Hall resistance. Here it is shown that this empirical relation is no longer valid when either the ordinary Hall angle or the anomalous Hall angle is not small. Using the proper conductivity relation, we reveal an unexpected magnetoresistance (MR) induced by the anomalous Hall effect (AHE). A $B$-linear MR arises and the sign of the slope depends on the sign of the anomalous Hall angle, giving rise to a characteristic bowtie shape. The Hall resistance in a single-band syst…
The chirality associated with broken time reversal symmetry in magnetically doped topological insulators has important implications to the quantum transport phenomena. Here we report the anomalous Hall effect studies in Mn- and Cr-doped Bi$_2$Te$_3$ topological insulators with varied thickness and doping content. By tracing the chirality of the Hall loops, we find that the Mn-type anomalous Hall effect with clockwise chirality is strengthened by the reduction of film thickness, which is opposite to that of the Cr-type anomalous Hall effect with counterclockwise chirality. We provide a phenomen…
We uncover two anomalous features in the nonlocal transport behavior of two-dimensional metallic materials with spin-orbit coupling. Firstly, the nonlocal resistance can have negative values and oscillate with distance, even in the absence of a magnetic field. Secondly, the oscillations of the nonlocal resistance under an applied in-plane magnetic field (Hanle effect) can be asymmetric under field reversal. Both features are produced by direct magnetoelectric coupling, which is possible in materials with broken inversion symmetry but was not included in previous spin diffusion theories of nonl…
We perform a first principles calculation of the anomalous Hall effect in ferromagnetic bcc Fe. Our theory identifies an intrinsic contribution to the anomalous Hall conductivity and relates it to the k-space Berry phase of occupied Bloch states. The theory is able to account for both dc and magneto-optical Hall conductivities with no adjustable parameters.
The quantum anomalous Hall effect has recently been observed experimentally in thin films of Cr doped (Bi,Sb)$_2$Te$_3$ at a low temperature ($\sim$ 30mK). In this work, we propose realizing the quantum anomalous Hall effect in more conventional diluted magnetic semiconductors with doped InAs/GaSb type II quantum wells. Based on a four band model, we find an enhancement of the Curie temperature of ferromagnetism due to band edge singularities in the inverted regime of InAs/GaSb quantum wells. Below the Curie temperature, the quantum anomalous Hall effect is confirmed by the direct calculation …
The Hall effect on selected samples of the dilution series Nb1-yFe2+y is studied. Normal and anomalous contributions are observed, with positive normal Hall effect dominating at high temperatures. Consistent analysis of the anomalous contribution is only possible for Fe-rich Nb0.985Fe2.015 featuring a ferromagnetic ground state. Here, a positive normal Hall coefficient is found at all temperatures with a moderate maximum at the spin-density-wave transition. The anomalous Hall effect is consistent with an intrinsic (Berry-phase) contribution which is constant below the ordering temperature TC a…
We argue that the scaling of the anomalous Hall effect (AHE) by Mathieu et al. [Phys. Rev. Lett. 93, 016602 (2004)] does not provide support to the interpretation of the AHE in SrRuO3 as an intrinsic effect due to Berry phase monopoles in k-space.
The anomalous Hall coefficient Rs has been studied for the reentrant spin glass system Fe0.7Al0.3 by measuring the magnetization M and the Hall resistivity r_H. We have found that R_s exhibits anomalous temperature dependence at the spin-glass transition temperature T_G, indicating that an additional term appears along with the beginning of the spin glass phase. The result is discussed in relation to the recent proposal of the chirality mechanism of the Hall effect in the spin glass phase.
We engineer quantum anomalous Hall effect in silicene via doping 3d transition metals. We show that there exists a stable quantum anomalous Hall effect in Vanadium doped silicene using both analytical model and Wannier interpolation. We also predict the quantum valley Hall effect and electrically tunable topological states could be realized in certain transition metal doped silicene where the energy band inversion occurs. Our finding provides new scheme for the realization of quantum anomalous Hall effect and platform for electrically controllable topological states.
