SrRuO $_3$ / SrIrO $_3$多层膜霍尔电阻环中驼峰异常的起源
Origin of the hump anomalies in the Hall resistance loops of ultrathin SrRuO$_3$/SrIrO$_3$ multilayers
摘要：
在SrRuO $_3$ /SrIrO $_3$外延双层膜中可以形成非常小的Néel skyrmions，并且在栅控器件中可以利用电场效应来操纵这些skyrmions，这极大地促进了最近对SrRuO $_3$异质结构的研究.强的界面Dzyaloshinskiii-Moriya相互作用，结合反转对称性的破缺，被认为是SrRuO $_3$ /SrIrO $_3$双层膜中skyrmion形成的驱动力.在这里，我们研究了名义上对称的异质结构，其中一个铁磁SrRuO $_3$层被夹在大的自旋-轨道耦合SrIrO $_3$层，其中的条件是不利于出现净界面Dzyaloshinskiii-Moriya相互作用。以前的skyrmions的形成在不对称的SrRuO $_3$ /SrIrO $_3$双层推断从异常霍尔电阻回路显示类似拓扑霍尔效应贡献的驼峰状功能。对称的SrIrO $_3$ /SrRuO $_3$ /SrIrO $_3$三层膜在霍尔环中不显示驼峰异常。然而，对称多层膜的异常霍尔电阻环（其中三层膜多次堆叠）确实表现出类似于非对称SrRuO $_3$ /SrIrO $_3$双层膜的驼峰状结构。霍尔效应环异常的起源可能存在于不可避免的差异，在电子和磁性的个别SrRuO $_3$层，而不是在形成的skyrmions。
英文摘要：
The proposal that very small Néel skyrmions can form in SrRuO$_3$/SrIrO$_3$ epitaxial bilayers and that the electric field-effect can be used to manipulate these skyrmions in gated devices strongly stimulated the recent research of SrRuO$_3$ heterostructures. A strong interfacial Dzyaloshinskii-Moriya interaction, combined with the breaking of inversion symmetry, was considered as the driving force for the formation of skyrmions in SrRuO$_3$/SrIrO$_3$ bilayers. Here, we investigated nominally symmetric heterostructures in which an ultrathin ferromagnetic SrRuO$_3$ layer is sandwiched between large spin-orbit coupling SrIrO$_3$ layers, for which the conditions are not favorable for the emergence of a net interfacial Dzyaloshinskii-Moriya interaction. Previously the formation of skyrmions in the asymmetric SrRuO$_3$/SrIrO$_3$ bilayers was inferred from anomalous Hall resistance loops showing humplike features that resembled topological Hall effect contributions. Symmetric SrIrO$_3$/SrRuO$_3$/SrIrO$_3$ trilayers do not show hump anomalies in the Hall loops. However, the anomalous Hall resistance loops of symmetric multilayers, in which the trilayer is stacked several times, do exhibit the humplike structures, similar to the asymmetric SrRuO$_3$/SrIrO$_3$ bilayers. The origin of the Hall effect loop anomalies likely resides in unavoidable differences in the electronic and magnetic properties of the individual SrRuO$_3$ layers rather than in the formation of skyrmions.
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