arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 0910.0528cond-mat.mes-hallcond-mat.mtrl-sci
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100 K温度激子开关

Excitonic switches at 100 K temperatures

G. Grosso, J. Graves, A. T. Hammack, A. A. High, L. V. Butov, M. Hanson, A. C. Gossard

摘要:

光子和光电子器件可以提供以比常规电子器件更高的速度实现有效信号处理的机会。交换机形成电路的构建块,并且已经实现了快速光子交换机[1,2,3,4,5,6]。最近,激子光电子器件的原理证明被证明[7,8]。激子器件的潜在优点包括高操作和互连速度、小尺寸以及将许多元件组合成集成电路的机会。在这里,我们展示了激子开关器件在100 K左右的温度下操作的原理的实验证明。该器件基于AlAs/GaAs耦合量子阱结构,包括激子光电晶体管(EXOT)、激子桥调制器(EXBM)和激子夹断调制器(EXPOM)。与早期器件相比,工作温度提高了两个数量级,早期器件的工作温度为1.5 K [7,8]。

英文摘要:

Photonic and optoelectronic devices may offer the opportunity to realize efficient signal processing at speeds higher than in conventional electronic devices. Switches form the building blocks for circuits and fast photonic switches have been realized [1,2,3,4,5,6]. Recently, proof of principle of exciton optoelectronic devices was demonstrated [7,8]. Potential advantages of excitonic devices include high operation and interconnection speed, small dimensions, and the opportunity to combine many elements into integrated circuits. Here, we demonstrate experimental proof of principle for the operation of excitonic switching devices at temperatures around 100 K. The devices are based on an AlAs/GaAs coupled quantum well structure and include the exciton optoelectronic transistor (EXOT), the excitonic bridge modulator (EXBM), and the excitonic pinch-off modulator (EXPOM). This is a two orders of magnitude increase in the operation temperature compared to the earlier devices, where operation was demonstrated at 1.5 K [7,8].

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