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arXiv 0910.0422cond-mat.mtrl-scicond-mat.str-el
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关联带理论研究应变对Fe $_{2-x}$ Ti $_x$ O $_3$异质结构稳定性和电子性质的影响

Effect of strain on the stability and electronic properties of ferrimagnetic Fe$_{2-x}$Ti$_x$O$_3$ heterostructures from correlated band theory

Hasan Sadat Nabi, Rossitza Pentcheva

摘要:

基于密度泛函理论(DFT)的计算方法,包括原位Hubbard $U$项,我们研究了衬底诱导应变对亚铁磁性Fe $_2$ O $_3$ -FeTiO $_3$固溶体和异质结构性质的影响.虽然通过形成混合的\fetw、\feth -接触层的电荷补偿机制不受影响,但应变可用于调节系统的电子性质,例如通过改变带隙中杂质能级的位置。与Fe $_{2}$ O $_{3}$(0001)或FeTiO $_{3}$(0001)-衬底上的膜相比,发现在通常用作衬底的Al $_{2}$ O $_{3}$(0001)的横向参数下的应变赤铁矿/钛铁矿膜在能量上是不利的。

英文摘要:

Based on density functional theory (DFT) calculations including an on-site Hubbard $U$ term we investigate the effect of substrate-induced strain on the properties of ferrimagnetic Fe$_2$O$_3$-FeTiO$_3$ solid solutions and heterostructures. While the charge compensation mechanism through formation of a mixed \fetw, \feth-contact layer is unaffected, strain can be used to tune the electronic properties of the system, e.g. by changing the position of impurity levels in the band gap. Straining hematite/ilmenite films at the lateral parameters of Al$_{2}$O$_{3}$(0001), commonly used as a substrate, is found to be energetically unfavorable as compared to films on Fe$_{2}$O$_{3}$(0001) or FeTiO$_{3}$(0001)-substrates.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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