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arXiv 0909.1716cond-mat.mtrl-sci
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理解共价硅与离子Al2O3之间的清洁界面

Understanding the Clean Interface between Covalent Si and Ionic Al2O3

H. J. Xiang, Juarez L. F. Da Silva, Howard M. Branz, Su-Huai Wei

摘要:

用第一性原理总能量计算结合新发展的“改进的basin-hopping”方法研究了(001)-Si/(001)-γ-Al_2 O_3异质界面的原子和电子结构.结果表明,在突变界面模型中,由于Si-O键和Si-Al共价键的形成,界面Si原子均为四配位。未钝化的界面具有大的LDA带隙,没有带隙能级,具有良好的电子特性。这些结果表明,它是可能的,有干净的超导体-氧化物界面。

英文摘要:

The atomic and electronic structures of the (001)-Si/(001)-gamma-Al2O3 heterointerface are investigated by first principles total energy calculations combined with a newly developed "modified basin-hopping" method. It is found that all interface Si atoms are fourfold coordinated due to the formation of Si-O and unexpected covalent Si-Al bonds in the new abrupt interface model. And the interface has perfect electronic properties in that the unpassivated interface has a large LDA band gap and no gap levels. These results show that it is possible to have clean semiconductor-oxide interfaces.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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