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arXiv 0909.1595cond-mat.mes-hall
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石墨烯的量子散射时间及其对散射源的影响

The quantum scattering time and its implications on scattering sources in graphene

X. Hong, K. Zou, J. Zhu

摘要:

我们确定了六个石墨烯样品的量子散射时间τ_q,迁移率为4,400 < mu <17,000 cm ^2/Vs,载流子密度范围很宽(1.2 < n <6x 10 ^{12}/cm ^2)。由Shubnikov-de Haas振荡得到的τ q值范围约为25-74 fs,对应于4.5-13 meV的单粒子能级展宽。在这些样品中,传输与量子散射时间的比率τ_t/τ_q跨越1.5-5.1,这可以结合来自短程中心和位于石墨烯片的2nm内的带电杂质的散射来定量地理解。我们的研究结果表明,电荷驻留在SiO_2表面发挥了主导作用,在限制载流子迁移率的电流样品。

英文摘要:

We determine the quantum scattering time tau_q in six graphene samples with mobility of 4,400 < mu < 17,000 cm^2/Vs over a wide range of carrier density (1.2 < n < 6x10^{12}/cm^2). tau_q derived from Shubnikov-de Haas oscillations ranges ~25-74 fs, corresponding to a single-particle level broadening of 4.5-13 meV. The ratio of the transport to quantum scattering time tau_t/tau_q spans 1.5-5.1 in these samples, which can be quantitatively understood combining scattering from short-ranged centers and charged impurities located within 2 nm of the graphene sheet. Our results suggest that charges residing on the SiO_2 surface play a dominant role in limiting carrier mobility in current samples.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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