Chemical vapour deposition synthetic diamond: materials, technology and applications
R S Balmer, J R Brandon, S L Clewes, H K Dhillon, J M Dodson, I Friel, P N Inglis, T D Madgwick, M L Markham, T P Mollart, N Perkins, G A Scarsbrook, D J Twitch… 展开作者
R S Balmer, J R Brandon, S L Clewes, H K Dhillon, J M Dodson, I Friel, P N Inglis, T D Madgwick, M L Markham, T P Mollart, N Perkins, G A Scarsbrook, D J Twitchen, A J Whitehead, J J Wilman, S M Woollard
备注：
51 pages, 16 figures
发表信息：
R S Balmer et al 2009 J. Phys.: Condens. Matter 21 364221
Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding material properties that can enable exceptional performance in applications as diverse as medical diagnostics, water treatment, radiation detection, high power electronics, consumer audio, magnetometry and novel lasers. Often the material is synthesized in planar form, however non-planar geometries are also possible and enable a number of key applications. This article reviews the material properties and characteristics of single crystal and polycrystalline CVD diamond, and how these can be utilized, focusing particularly on optics, electronics and electrochemistry. It also summarizes how CVD diamond can be tailored for specific applications, based on the ability to synthesize a consistent and engineered high performance product.
A cheap and flexible method is introduced that enables the epitaxial growth of bilayer graphene on Pt(111) by sequential chemical vapour deposition. Extended regions of two stacked graphene sheets are obtained by, first, the thermal decomposition of ethylene and the subsequent formation of graphene. In the second step, a sufficiently thick Pt film buries the first graphene layer and acts as a platform for the fabrication of the second graphene layer in the third step. A final annealing process then leads to the diffusion of the first graphene sheet to the surface until the bilayer stacking wit…
Strain can be used as an alternate way to tune the electronic properties of graphene. Here we demonstrate that it is possible to tune the uniform strain of graphene simply by changing the chemical vapor deposition growth temperature of graphene on copper. Due to the cooling of the graphene on copper system, we can induce a uniform compressive strain on graphene. The strain is analyzed by Raman spectroscopy, where a shift in the 2D peak is observed and compared to our ab initio calculations of the graphene on copper system as a function of strain.
We report that graphene films with thickness ranging from 1 to 7 layers can be controllably synthesized on the surface of polycrystalline copper by a chemical vapour deposition method. The number of layers of graphene is controlled precisely by regulating the flow ratio of CH4 and H2, the reaction pressure, the temperature and the reaction time. The synthesized graphene films were characterized by scanning electron microscopy, transmission electron microscopy, selected area electron diffraction, X-ray diffraction and Raman spectroscopy. In addition, the graphene films transferred from copper t…
Two-dimensional molybdenum disulphide on graphene grown by chemical vapour deposition is a promising van der Waals system for applications in optoelectronics and catalysis. To extend the fundamental understanding of growth and intrinsic properties of molybdenum disulphide on graphene, molybdenum disulphide on highly oriented pyrolytic graphite is a suitable model system. Here we show, experimentally and by density-functional-theory calculations, that molybdenum disulphide flakes grow in two orientations. One of the orientations is energetically preferred, the other one is rotated by 30 degree.…
Aluminum oxide thin films were deposited on silicon substrates under different deposition conditions using pulse pressure metal organic chemical vapour deposition (PP-MOCVD). The current study investigates into the growth mechanism of the deposited film and the control of the film morphology by varying the processing parameters of PP-MOCVD - choice of solvent, concentration, and presence of a shield. Aluminum sec-butoxide (ASB) was used as the aluminum source while hexane and toluene were used as the solvents. The films were deposited at 475oC at different precursor concentrations. It was obse…
In order to improve the performance of existing technologies based on single crystal diamond grown by chemical vapour deposition (CVD), and to open up new technologies in fields such as quantum computing or solid state and semiconductor disc lasers, control over surface and bulk crystalline quality is of great importance. Inductively coupled plasma (ICP) etching using an Ar/Cl gas mixture is demonstrated to remove sub-surface damage of mechanically processed surfaces, whilst maintaining macroscopic planarity and low roughness on a microscopic scale. Dislocations in high quality single crystal …
In this paper the design of a simple, space constrained chemical vapour deposition reactor for diamond growth is detailed. Based on the design by NIRIM, the reactor is composed of a quartz discharge tube placed within a 2.45 GHz waveguide to create the conditions required for metastable growth of diamond. Utilising largely off-the-shelf components and a modular design, the reactor allows for easy modification, repair, and cleaning between growth runs. The elements of the reactor design are laid out with the CAD files, parts list, and control files made easily available to enable replication. F…
Emerging flexible and wearable technologies such as healthcare electronics and energy-harvest devices could be transformed by the unique properties of graphene. The vision for a graphene-driven industrial revolution is motivating intensive research on the synthesis of (1) high quality and (2) low cost graphene. Hot-wall chemical vapour deposition (CVD) is one of the most competitive growth methods, but its long processing times are incompatible with production lines. Here we demonstrate the growth of high quality monolayer graphene using a technique that is 100 times faster than standard hot-w…
A graphyne (GY) family composed of the triple (sp) and double (sp2) bonds-hybridized carbon atoms is a promising allotrope of carbon for the development of nanoscale electronic devices. Unlike graphene, the GY family containing carbon sp bonds remains an unsolved problem in efficient two-dimensional (2D) growth due to monomer instability and side reactions. Herein, we synthesize GY into a single 2D layer by chemical vapor deposition (CVD) at low temperatures preventing unexpected reactions, using 1,3,5-tribromo-2,4,6-triethynylbenzene (TBTEB). The CVD-grown GY via a surface-confined coupling b…
The preparation of two-dimensional transition metal dichalcogenides on an industrially relevant scale will rely heavily on bottom-up methods such as chemical vapour deposition. In order to obtain sufficiently large quantities of high-quality material, a knowledge-based optimization strategy for the synthesis process must be developed. A major problem that has not yet been considered is the degradation of materials by etching during synthesis due to the high growth temperatures. To address this problem, we introduce a mathematical model that accounts for both growth and, for the first time, etc…
Graphene nanoflakes (GNFs) were synthesized by atmospheric pressure chemical vapour deposition of propane (C3H8) employing Ni (salen) powder without the introduction of a substrate. The graphitic nature of the GNFs was examined by an X-ray diffraction method. Scanning electron microscopy results revealed that GNFs were stacked on top of one another and had a high aspect ratio. Transmission electron microscopy studies suggested that the GNFs were made up of a number of crystalline graphene layers, some of which were even single crystalline as evident from the selected area diffraction pattern. …
A microwave plasma model of a chemical vapour deposition (CVD) reactor is presented for understanding spatial heteroepitaxial growth of polycrystalline diamond on Si. This work is based on the TM0(n>1)p clamshell style reactor (Seki Diamond/ASTEX SDS 6K, Carat CTS6U, ARDIS-100 style) whereby a simplified H_2 plasma model is used to show the radial variation in growth rate over small samples with different sample holders. The model uses several steps: an electromagnetic (EM) eigenfrequency solution, a frequency-transient EM/plasma fluid solution and transient a heat transfer solution at low and…
Nitrogen is frequently included in chemical vapour deposition feed gases to accelerate diamond growth. While there is no consensus for an atomistic mechanism of this effect, existing studies have largely focused on the role of sub-surface nitrogen and nitrogen-based adsorbates. In this work, we demonstrate the catalytic effect of surface-embedded nitrogen in nucleating new layers of (100) diamond. To do so we develop a model of nitrogen overgrowth using density functional theory. Nucleation of new layers occurs through C insertion into a C--C surface dimer. However, we find that C insertion in…
Successful ways of fully exploiting the excellent structural and multifunctional performance of graphene and related materials are of great scientific and technological interest. New opportunities are provided by the fabrication of a novel class of nanocomposites with a nanolaminate architecture. In this work, by using the iterative lift-off/float-on process combined with wet depositions, we incorporated cm-size graphene monolayers produced via Chemical Vapour Deposition into a poly (methyl methacrylate) (PMMA) matrix with a controlled, alternate-layered structure. The produced nanolaminate sh…
Chromia (Cr2O3) has been extensively explored for the purpose of developing widespread industrial applications, owing to the convergence of a variety of mechanical, physical and chemical properties in one single oxide material. Various methods have been used for large area synthesis of Cr2O3 films. However, for selective area growth and growth on thermally sensitive materials, laser-assisted chemical vapour deposition (LCVD) can be applied advantageously. Here we report on the growth of single layers of pure Cr2O3 onto sapphire substrates at room temperature by low pressure photolytic LCVD, us…
The present work deals with the synthesis of crystalline carbon nitride thin films by microwave plasma assisted chemical vapour deposition in N$_2$/CH$_4$ gas mixture. The discharge analysis by optical emission spectroscopy shows that the increase in the N$_2$/CH$_4$ ratio involves an important production of the CN and C$_2$ radicals. In the films X-ray energy dispersion spectroscopy shows that the N/C ratio decreases when the CH$_4$ percentage in N$_2$ increases. Xray diffraction and electron diffraction are used to study the carbon nitride films nature. Scanning electron microscopy shows tha…
The deposition of nano-crystalline ZnS/diamond composite protective coatings on silicon, sapphire, and ZnS substrates, as a preliminary step to coating infrared transparent ZnS substrates from powder mixtures by the aerosol deposition method is presented. Advantages of the aerosol deposition method include the ability to form dense, nanocrystalline films up to hundreds of microns thick at room temperature and at a high deposition rate on a variety of substrates. Deposition is achieved by creating a pressure gradient that accelerates micrometer-scale particles in an aerosol to high velocity. Up…
Results on the chemical composition, structure and growth kinetics of titanium nitride (TiN) films deposited on mild steel substrates by pyrolytic laser-induced chemical vapour deposition (LCVD) are presented. Golden coloured lines of TiN were deposited from a reactive gas mixture of TiCl4, N2 and H2 using a continuous wave TEM00 CO2 laser beam as heat source. The chemical composition and structure of the films were determined by electron probe microanalysis (EPMA) and glancing incidence X-ray diffraction (GIXRD). A non-contact laser profilometer was used to measure the thickness profiles of t…
Although chemical vapor deposition (CVD) is one of the preferred routes to synthetic diamond crystals, a full knowledge of the point defects produced during growth is still incomplete. Here we exploit the charge and spin properties of nitrogen-vacancy (NV) centers in type-1b CVD diamond to expose an optically and magnetically dark point defect, so far virtually unnoticed despite an abundance comparable to (if not greater than) that of substitutional nitrogen. Indirectly-detected photo-luminescence spectroscopy indicates a donor state 1.6 eV above the valence band, although the defect's microsc…
The outstanding electrical and mechanical properties of graphene make it very attractive for several applications, Nanoelectronics above all. However a reproducible and non destructive way to produce high quality, large-scale area, single layer graphene sheets is still lacking. Chemical Vapour Deposition of graphene on Cu catalytic thin films represents a promising method to reach this goal, because of the low temperatures (T < 900 Celsius degrees) involved during the process and of the theoretically expected monolayer self-limiting growth. On the contrary such self-limiting growth is not comm…
Diamond Like Carbon (DLC) films were deposited on quartz substrates using Dense Plasma Focus (DPF) method. The formation of ${\rm sp^3}$ bonds as is it's content in the film strongly depends on the substrate and it seems quartz is not a suitable substrate. However, we report here the formation of DLC films on quartz substrates that were maintained at elevated temperatures and show the content of carbon atoms with ${\rm sp^3}$ bonds in the film is directly proportional to the substrate's temperature. Not only does this give good control of film fabrication, but also shows how to take advantage …
Enhanced chemical vapour deposition of monolayer MoS2 films via a clean promoter
School of Physics, Trinity College Dublin（都柏林三一学院物理系）；School of Chemistry, Trinity College Dublin（都柏林三一学院化学系）；Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER) Research Centers, Trinity College Dublin（都柏林三一学院自适应纳米结构与纳米器件研究中心及先进材料与生物工程研究中心）；School of Physics and Materials Science, Nanchang University（南昌大学物理与材料科学学院）
The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interests. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapour deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality comparable to exfoliated graphene. In this chapter, we review the synthesis and characterizations of graphene…
Amorphous carbon (a-C) materials have diverse interesting and useful properties, but the understanding of their atomic-scale structures is still incomplete. Here, we report on extensive atomistic simulations of the deposition and growth of a-C films, describing interatomic interactions using a machine learning (ML) based Gaussian Approximation Potential (GAP) model. We expand widely on our initial work [Phys. Rev. Lett. 120, 166101 (2018)] by now considering a broad range of incident ion energies, thus modeling samples that span the entire range from low-density ($sp^{2}$-rich) to high-density…
A technique has been developed for depositing diamond crystals on the endfaces of optical fibers and capturing the fluorescence generated by optically active defects in the diamond into the fiber. This letter details the diamond growth on optical fibers and transmission of fluorescence through the fiber from the nitrogen-vacancy (N-V) color center in diamond. Control of the concentration of defects incorporated during the chemical vapor deposition (CVD) growth process is also demonstrated. These are the first critical steps in developing a fiber coupled single photon source based on optically …
Tuning the surface energy of fluorinated diamond-like carbon coatings via plasma immersion ion implantation plasma-enhanced chemical vapor deposition with 1,1,1,2-tetrafluoroethane
Fabrication of single nickel-nitrogen (NE8) defect centers in diamond by chemical vapor deposition is demonstrated. Under continuous-wave 745 nm laser excitation single defects were induced to emit single photon pulses at 797 nm with a linewidth of 1.5 nm at room temperature. Photon antibunching of single centers was demonstrated using a Hanbury-Brown and Twiss interferometer. Confocal images revealed approximately 10^6 optically active sites/cm^2 in the synthesized films. The fabrication of an NE8 based single photon source in synthetic diamond is important for fiber based quantum cryptograph…
The chemical vapor deposition of polycrystalline diamond (PCD) films is typically done on substrates seeded with diamond nanoparticles. Specular laser reflectance and a continuous film model have been used to monitor the thickness of these films during their deposition. However, most seeds are isolated during the early stages of the deposition, which questions the utility of applying such a continuous film model for monitoring deposition before film formation. In this work, we present a model based on the Rayleigh theory of scattering for laser reflectance at substrates with growing nanodiamon…
The engineering of defects in diamond, particularly nitrogen-vacancy (NV) centers, is important for many applications in quantum science. A materials science approach based on chemical vapor deposition (CVD) growth of diamond and in-situ nitrogen doping is a promising path toward tuning and optimizing the desired properties of the embedded defects. Herein, with the coherence of the embedded defects in mind, we explore the effects of substrate miscut on the diamond growth rate, nitrogen density, and hillock defect density, and we report an optimal angle range between 0.66° < θ < 1.16° for the p…
Lanthanides are vital components in lighting, imaging technologies and future quantum memory applications due to their narrow optical transitions and long spin coherence times. Recently, diamond has become a preeminent platform for realization of many experiments in quantum information science. In this work, we demonstrate a promising approach to incorporate Eu ions into single crystal diamond and nanodiamonds, providing a means to harness the exceptional characteristics of both lanthanides and diamond in a single material. Polyelectrolytes are used to electrostatically assemble Eu(III) chelat…
One-dimensional defects in graphene have strong influence on its physical properties, such as electrical charge transport and mechanical strength. With enhanced chemical reactivity, such defects may also allow us to selectively functionalize the material and systematically tune the properties of graphene. Here we demonstrate the selective deposition of metal at chemical vapour deposited graphene's line defects, notably grain boundaries, by atomic layer deposition. Atomic layer deposition allows us to deposit Pt predominantly on graphene's grain boundaries, folds, and cracks due to the enhanced…
We report detection and coherent control of a single proton nuclear spin using an electronic spin of the nitrogen-vacancy (NV) center in diamond as a quantum sensor. In addition to determining the NV-proton hyperfine parameters by employing multipulse sequences, we polarize and coherently rotate the single proton spin, and detect an induced free precession. Observation of free induction decays is an essential ingredient for high resolution proton nuclear magnetic resonance, and the present work extends it to the atomic scale. We also discuss the origin of the proton as incorporation during che…
Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a non-conducting diamond layer, which itself is situated on a Silicon wafer. This structure is then shaped into Hall-bar devices of various dimensions using optical lithography and dry-etching techniques. The devices' electrical properties are investigated at various temperatures using a cryogen-free dilution refrigerator.
The influence of technological parameters of pulsed-DC chemical vapour deposition on the deposition rate, the mechanical properties and the residual stress of diamond-like carbon (DLC) coatings deposited onto a martensitic steel substrate, using a Ti buffer layer between coating and substrate, has been studied. For this purpose, a Plackett-Burman experiment design and Pareto charts were used to identify the most significant process parameters, such as deposition time, methane flux, chamber pressure, power, pulse frequency, substrate roughness and thickness of titanium thin film. The substrate …
In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface morphology and defect density though it is accompanied with Ge droplets accumulation at the surface. The Ge incorporation level inside the 4H-SiC matrix, ranging from few 1017 to few 1018 at.cm-3, was found to be mainly affected by the growth temperature and GeH4 flux. Other growth parameters like C/Si ratio, polarity, or off-orientation did not show any significant influence. On the other hand, adding GeH4 led to the …
In this master thesis, diamond-like carbon DLC/Cr bilayer systems, with thickness up to 1278 nm were formed on ABS, glass and Si substrates. Substrates surface were prepared by oxygen plasma cleaning process. The chromium thin film, which acts as a buffer layer, was grown by magnetron sputtering deposition. Diamond-like carbon was deposited by pulsed-DC PECVD, with methane and hydrogen as reactants. A Plackett-Burman experimental design was carried out in order to determine the influence of technological parameters of the deposition process on the thickness, deposition rate, intrinsic stress, …
Extending spin dephasing time of perfectly aligned Nitrogen-Vacancy centers by mitigating stress distribution on highly misoriented chemical-vapor-deposition diamond
CVD growth is capable of producing multiple single crystal islands of atomically thin TMDs over large area substrates, with potential control of their morphology, lateral size, and epitaxial alignment to substrates with hexagonal symmetry. Subsequent merging of epitaxial domains can lead to single-crystal monolayer sheets - a step towards scalable production of high quality TMDs. For CVD growth to be effectively used for such production it is necessary to be able to rapidly assess the quality of material across entire large area substrates. To date characterisation has been limited to sub 0.1 …
Diamond-like carbon (DLC) coatings have excellent mechanical and tribological properties, as well as good wear and corrosion resistance. They are well established in medical, metalworking and automotive applications. However, further improvements are needed and substrate pre-treatment plays an important role in supporting and enforcing the adhesion and service performance of the DLC coatings. In this work, the synergetic effect of low-pressure arc plasma-assisted-nitriding (PAN) treatment of M2 steel and plasma-enhanced chemical vapor deposition (PECVD) on the DLC coatings adhesion was analyze…
The nitrogen-vacancy (NV) center in diamond is a promising quantum system for magnetometry applications exhibiting optical readout of minute energy shifts in its spin sub-levels. Key material requirements for NV ensembles are a high NV$^-$ concentration, a long spin coherence time and a stable charge state. However, these are interdependent and can be difficult to optimize during diamond growth and subsequent NV creation. In this work, we systematically investigate the NV center formation and properties in chemical vapor deposition (CVD) diamond. The nitrogen flow during growth is varied by ov…
Chemical-Vapor-Deposition (CVD) diamond films were prepared using a variation of nitrogen addition into the gas source admixture by a direct current CVD method. The influence of nitrogen addition on the crystallographic texture and grain shape evolution in heteroepitaxial polycrystalline diamond films was investigated using high-resolution electron backscattering diffraction (HR-EBSD) and X-ray diffraction (XRD). The analysis reveals that an addition of 1.5% N2 to the CH4 gas flow leads to a strong enhancement of a {110} fiber texture. The phenomenon is discussed in terms of a competitive grow…
This paper focuses on the synthesis of rhombohedral B4C (r-B4C) coatings by CO2 laser-assisted chemical vapour deposition (LCVD), using a dynamic reactive atmosphere of BCl3, H2 and CH4 or C2H4. The influence of the carbon precursor on the deposition kinetics is discussed. The use of ethylene as carbon precursor presents several advantages over the use of methane, which is the conventional carbon precursor in CVD processes. These advantages are mainly related to its high absorption coefficient at the laser wavelength and a higher sticking coefficient, which enables to attain higher deposition …
We present the electrical transport characteristics of a batch of nano-crystalline diamond films of varying nitrogen concentrations and explain the conduction mechanism by the disordered quasi-superlattice model applied to semiconductor heterostructures. Synthesized by the hot filament chemical vapour deposition technique, the degree of structural disorder in the films, confirmed from Raman spectroscopy, is found to be controllable, resulting in the transition of conduction mechanism from localized and activated to the metallic conduction regime. Hence through high field magneto-resistance mea…
We investigate the chemical composition and adhesion of chemical vapour deposited thin-film alumina on TiC using and extending a recently proposed nonequilibrium method of ab initio thermodynamics of deposition growth (AIT-DG) [Rohrer J and Hyldgaard P 2010 Phys. Rev. B 82 045415]. A previous study of this system [Rohrer J, Ruberto C and Hyldgaard P 2010 J. Phys.: Condens. Matter 22 015004] found that use of equilibrium thermodynamics leads to predictions of a non-binding TiC/alumina interface, despite the industrial use as a wear-resistant coating. This discrepancy between equilibrium theory …
CdTe and CdS are emerging as the most promising materials for thin film photovoltaics in the quest of the achievement of grid parity. The major challenge for the advancement of grid parity is the achievement of high quality at the same time as low fabrication cost. The present paper reports the results of the new deposition technique, Pulsed Plasma Deposition (PPD), for the growth of the CdTe layers on CdS/ZnO/quartz and quartz substrates. The PPD method allows to deposit at low temperature. The optical band gap of deposited layers is 1.50 eV, in perfect accord with the value reported in the l…
Control of the crystalline orientation of nitrogen-vacancy (NV) defects in diamond is here demonstrated by tuning the temperature of chemical vapor deposition (CVD) growth on a (113)-oriented diamond substrate. We show that preferential alignment of NV defects along the [111] axis is significantly improved when the CVD growth temperature is decreased. This effect is then combined with temperature-dependent incorporation of NV defects during the CVD growth to obtain preferential alignment over dense ensembles of NV defects spatially localized in thin diamond layers. These results demonstrate th…
We show that the orientation of nitrogen-vacancy (NV) defects in diamond can be efficiently controlled through chemical vapor deposition (CVD) growth on a (111)-oriented diamond substrate. More precisely, we demonstrate that spontaneously generated NV defects are oriented with a ~ 97 % probability along the [111] axis, corresponding to the most appealing orientation among the four possible crystallographic axes. Such a nearly perfect preferential orientation is explained by analyzing the diamond growth mechanism on a (111)-oriented substrate and could be extended to other types of defects. Thi…
