Defects of Ge quantum dot arrays may affect the electrophysical, photoelectrical or optical properties of Ge/Si heterostructures as well as the functionality of devices produced on their basis. The defects of Ge quantum dot arrays formed at moderate temperatures on the Si(001) surface have been investigated by the ultra high vacuum scanning tunnelling microscope integrated with the molecular beam epitaxy chamber. A preliminary classification of the defects has been carried out. Morphological peculiarities of the defects have been studied. The surface densities of defects of different types have been determined.
Metal halide perovskites quantum dots (MHPQDs) have aroused enormous interesting in the photovoltaic and photoelectric because of their marvelous properties and size characteristics. However, one of key problems that how to systematically analyze charge carriers trapping by different defects is still a challenge task. Here, we study nonradiation multiphonon processes of the charge carrier trapping by various defects in MHPQDs based on the well-known Huang-Rhys model, in which a method of fullconfiguration defect, including different defect species with variable depth and lattice relaxation str…
Quantum dots have found applications across the semiconductor and biotechnology industries, improving energy efficiency, color purity, and imaging capability. However, the standard quantum dot relies on a heavy metal architecture, which has undesirable environmental impacts. Thus, alternative material systems are desirable. One strategy is the ZnS-AgInS2 (ZAIS) quantum dot which has a metal dichalcogenide chemical structure. Unlike heavy metal quantum dots, these nanoparticles luminesce even when defects are present, and their emission wavelength is tuned by varying the relative composition. P…
We report the fabrication of a van der Waals tunneling device hosting a defect-bound quantum dot coupled to NbSe$_2$. We find that upon application of magnetic field, the device exhibits a zero-bias conductance peak. The peak, which splits at higher fields, is associated with a Kondo effect. At the same time, the junction retains conventional quasiparticle tunneling features at finite bias. Such coexistence of a superconducting gap and a Kondo effect are unusual, and are explained by noting the two-gap nature of the superconducting state of NbSe$_2$, where a magnetic field suppresses the low e…
In this work, we report for the first time the crucial role of topological anomalies like Stone-Wales (SW) type bond rotations in tuning the optical properties of graphene quantum dots (GQDs). By means of first-principles calculations, we first show that the structural stability of GQDs strongly depends on position of SW defects. Optical absorption spectra is then computed using electron-correlated methodology to demonstrate that SW type reconstruction is responsible for the appearance of new defect-induced peaks below the optical gap and dramatically modifies the optical absorption profile. I…
This work demonstrates the unique approach of introducing divacancy imperfections in topological Stone-Wales type defected graphene quantum dots for harvesting both singlet and triplet excitons, essential for fabricating fluorescent organic light-emitting diodes. Here, we first reveal that structural relaxation of these systems establishes the high-spin triplet state as the stable ground state at room temperature, thereby significantly increasing their potential in designing spintronic devices. Our extensive electron-correlated computations then demonstrate that the energetic ordering of the s…
Thermal quenching is one of the essential factors in reducing the efficiency of radiative processes in luminophores of various nature. The emission activity of low dimensional structures is influenced also by multiplicity of parameters that are related to synthesis processes, treatment regimes, etc. In the present work, we have investigated the temperature dependence of photoluminescence caused by exciton and defect-related transitions in ensembles of biocompatible InP/ZnS core/shell nanocrystals with an average size of 2.1 and 2.3 nm. The spread in the positions of energy levels is shown to b…
We report a correlative microscopy study of a sample containing three stacks of InGaN/GaN quantum dots (QDs) grown at different substrate temperature, each stack consisting of 3 layers of QDs. Decreasing the substrate temperature along the growth axis leads to the proliferation of structural defects. However, the luminescence intensity increases towards the surface, in spite of the higher density of threading dislocations, revealing that the QD layers closer to the substrate behave as traps for non-radiative point defects. During atom probe tomography experiments combined with in-situ micro-ph…
