垂直堆叠InAs/GaAs量子点图案化阵列的光致发光
Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots
摘要：
我们报告的光致发光测量垂直堆叠的InAs/GaAs量子点生长的分子束外延聚焦离子束图案化的孔阵列与不同的阵列间距。仅在图案化区域上观察到1.24 eV的量子点发射，表明在这些生长条件下在所需位置和低于点形成的临界厚度处光学活性点的优先成核。光致发光测量作为不同的聚焦离子束照射的孔间距的函数表明，量子点发射强度随着阵列周期性的降低而增加，与增加的点密度一致。
英文摘要：
We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular-beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only on patterned regions, demonstrating preferential nucleation of optically-active dots at desired locations and below the critical thickness for dot formation at these growth conditions. Photoluminescence measurements as a function of varying focused ion beam irradiated hole spacing showed that the quantum dot emission intensity increased with decreasing array periodicity, consistent with increasing dot density.
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