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arXiv 0908.0352quant-ph
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用于量子信息处理的金刚石纳米线的制备

Fabrication of Diamond Nanowires for Quantum Information Processing Applications

Birgit Hausmann, Mughees Khan, Tom Babinec, Yinan Zhang, Katie Martinick, Murray McCutcheon, Phil Hemmer, Marko Loncar

摘要:

我们提出了一种设计和自顶向下的制造方法,用于在块状单晶和多晶金刚石中实现金刚石纳米线。数值模拟被用来研究氮空位(NV)色心和纳米线的光学模式之间的耦合,并找到一个最佳的纳米线直径范围,允许发射的光子的大收集效率。采用电感耦合等离子体(ICP)反应离子刻蚀(RIE)技术制备纳米线。滴铸纳米颗粒(包括$\mathrm{Au}$、$\mathrm{SiO_{2}}$和$\mathrm{Al_2O_3}$)以及电子束光刻限定的旋涂玻璃和蒸发的$\mathrm{Au}$已经被用作蚀刻掩模。我们发现$\mathrm{Al_2O_3}$纳米颗粒是最耐蚀刻的。与此同时,FOx电子束抗蚀剂(旋涂玻璃)被证明是一个合适的蚀刻掩模制造有序阵列的金刚石纳米线。我们能够在多晶和单晶金刚石中获得具有近垂直侧壁的纳米线。本文中提出的多晶纳米线的高度和直径分别为$\unit[\approx1]{μm}$和$\unit[120-340]{nm}$,具有$\unit[200]{nm/min}$蚀刻速率。在单晶金刚石(类型Ib和IIa)纳米线的情况下,本文中示出的不同金刚石和掩模的高度和直径是$\unit[1-2.4]{μm}$和$\unit[120-490]{nm}$,蚀刻速率在$\unit[190-240]{nm/min}$之间。

英文摘要:

We present a design and a top-down fabrication method for realizing diamond nanowires in both bulk single crystal and polycrystalline diamond. Numerical modeling was used to study coupling between a Nitrogen Vacancy (NV) color center and optical modes of a nanowire, and to find an optimal range of nanowire diameters that allows for large collection efficiency of emitted photons. Inductively coupled plasma (ICP) reactive ion etching (RIE) with oxygen is used to fabricate the nanowires. Drop-casted nanoparticles (including $\mathrm{Au}$, $\mathrm{SiO_{2}}$ and $\mathrm{Al_2O_3}$) as well as electron beam lithography defined spin-on glass and evaporated $\mathrm{Au}$ have been used as an etch mask. We found $\mathrm{Al_2O_3}$ nanoparticles to be the most etch resistant. At the same time FOx e-beam resist (spin-on glass) proved to be a suitable etch mask for fabrication of ordered arrays of diamond nanowires. We were able to obtain nanowires with near vertical sidewalls in both polycrystalline and single crystal diamond. The heights and diameters of the polycrystalline nanowires presented in this paper are $\unit[\approx1]{μm}$ and $\unit[120-340]{nm}$, respectively, having a $\unit[200]{nm/min}$ etch rate. In the case of single crystal diamond (types Ib and IIa) nanowires the height and diameter for different diamonds and masks shown in this paper were $\unit[1-2.4]{μm}$ and $\unit[120-490]{nm}$ with etch rates between $\unit[190-240]{nm/min}$.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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