通过灰度光刻在更低温度下制造空气桥以提高电路 QED 量子处理器中纳米线 transmon 的良率
Lower-temperature fabrication of airbridges by grayscale lithography to increase yield of nanowire transmons in circuit QED quantum processors
AI总结：
针对高温空气桥工艺会损害预置 Josephson 元件的问题，本文用灰度光刻替代光刻胶回流，将峰值温度由200°C降至150°C，显著提高了Al接触InAs纳米线transmon量子比特的良率。
摘要：
基于电路量子电动力学的量子硬件大量使用空气桥，以抑制共面波导传输线中不需要的波传播模式。空气桥还提供了一种互连，使传输线能够交叉。传统的空气桥制造在金属化之前通过在高温下回流光刻胶来产生弯曲轮廓。高温可能影响耦合能量，甚至影响预先制造的超导量子比特、可调耦合器和谐振器的 Josephson 元件的良率。我们采用灰度光刻代替回流，将空气桥处理的峰值温度从 200°C 降低到 150°C，结果表明，使用 Al 接触 InAs 纳米线实现 Josephson 元件的 transmon 量子比特良率显著提高。
英文摘要：
Quantum hardware based on circuit quantum electrodynamics makes extensive use of airbridges to suppress unwanted modes of wave propagation in coplanar-waveguide transmission lines. Airbridges also provide an interconnect enabling transmission lines to cross. Traditional airbridge fabrication produces a curved profile by reflowing resist at elevated temperature prior to metallization. The elevated temperature can affect the coupling energy and even yield of pre-fabricated Josephson elements of superconducting qubits, tuneable couplers and resonators. We employ grayscale lithography in place of reflow to reduce the peak airbridge processing temperature from $200$ to $150^\circ\mathrm{C}$, showing a substantial yield increase of transmon qubits with Josephson elements realized using Al-contacted InAs nanowires.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
