二维量子自旋系统(CuCl)LaNb 2 O 7具有带隙为2.3 meV的自旋单重态基态,而等结构材料(CuBr)LaNb 2 O 7在TN = 32 K时显示出共线反铁磁有序.本文报道了(CuCl_(1-x)Br_x)LaNb_2 O_7(0 < x < 1)固溶体的合成,并通过磁化率、强场磁化强度和中子衍射研究了其结构和磁性。单元参数的x-依赖性遵循Vegards定律,验证了Cl和Br原子在卤化物位点的均匀分布,尽管从内部和层间单元距离(相对于x)之间的相反相关性推断出更复杂的结构演变。发现5%-Br取代在TN = 7 K时诱导反铁磁有序,与最近的mSR研究一致,并且磁结构是共线的,具有显著降低的磁矩。进一步的Br取代导致TN线性增加至x = 1。这些结果表明(CuCl)LaNb 2 O 7位于量子相界附近。
英文摘要:
The two-dimensional (2D) quantum spin system (CuCl)LaNb2O7 has a spin-singlet ground state with a gap of 2.3 meV, while the isostructural material (CuBr)LaNb2O7 displays collinear antiferromagnetic order at TN = 32 K. Here we report on the synthesis of solid solution (CuCl1-xBrx)LaNb2O7 (0 < x < 1), and its structural and magnetic properties by means of magnetic susceptibility, high-field magnetization, and neutron diffraction studies. The x-dependence of cell parameters follows Vegards law, verifying the uniform distribution of Cl and Br atoms at the halide site, though a more complex structural evolution is inferred from an opposing correlation between the intra- and interlayer cell distances (vs. x). 5%-Br substitution is found to induce antiferromagnetic order with TN = 7 K, consistent with a recent mSR study, and the magnetic structure is collinear, having a significantly reduced moment. Further Br substitution leads to a linear increase in TN up to x = 1. These results indicate that (CuCl)LaNb2O7 is located in the vicinity of the quantum phase boundary.
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Synergetic Enhancement on Bulk and Grain Boundary Ionic Conduction of Mg Doped High-Entropy NASICON-Type Solid Electrolyte for Solid-State Na+ Batteries by Spray Flame Synthesis
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University of California, Berkeley(加州大学伯克利分校);Lawrence Berkeley National Laboratory(劳伦斯伯克利国家实验室);Nanyang Technological University(南洋理工大学)
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Unconventional and Powerful Ion Sources for Solid-State Ion Exchange, Cu2SO4 and Cu3PO4: Exemplified by Synthesis of Metastable β-CuGaO2 from Stable β-LiGaO2
First-principles design and subsequent synthesis of a material to search for the permanent electric dipole moment of the electron
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Solid-state reaction synthesis of superconducting refractory-metal germanides for Ge/SiGe quantum devices
QuTech and Kavli Institute of Nanoscience, Delft University of Technology(代尔夫特理工大学量子纳米科学卡弗里研究所和QuTech);Materials Department, University of California, Santa Barbara(加州大学圣塔芭芭拉分校材料系);Department of Materials, University of Oxford(牛津大学材料系)
Deformation, lattice instability, and metallization during solid-solid structural transformations under general applied stress tensor: example of Si I -> Si II
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