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arXiv 0907.4122cond-mat.mes-hall
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半导体纳米结构中的自旋电流:非平衡格林函数方法

Spin Currents in Semiconductor Nanostructures: A Nonequilibrium Green-Function Approach

Branislav K. Nikolic, Liviu P. Zarbo, Satofumi Souma

摘要:

这一章的“牛津纳米科学与技术手册:前沿和进展”评论非平衡格林函数(NEGF)的方法来模拟自旋电流的产生,运输和检测半导体纳米结构包含不同类型的自旋轨道(SO)耦合。它的教程风格-从自旋霍尔效应(SHE)领域的例子和治疗的Rashba,Dresselhaus和外在SO耦合-提供实用的配方来计算总自旋和电荷电流流出的设备,以及非平衡局部自旋密度和自旋通量内的多端纳米结构。这些量是从自旋分辨的NEGFs的知识中获得的,NEGFs可以描述弹道和扩散输运机制,同时处理室温下相关的相位相干效应或退相机制,可以用来理解最近在复杂的低维纳米结构中对介观和量子SHE的全电检测实验,以及利用相干自旋动力学对大量的“第二代”自旋电子器件进行建模。本章还提供了相关的技术和计算细节,如广泛的覆盖面:(一)延迟和更少的绿色功能的SO耦合纳米结构连接到许多电极的建设;(二)计算的自能量所引入的不同类型的电极连接到中心区域;以及(iii)用于NEGF评估的加速算法,其使得在尺寸与自旋进动长度相当的器件中进行自旋输运建模成为可能(通常几百纳米),其设定了弹道SO耦合纳米结构中的介观SHE效应预期达到其最佳量级的尺度。

英文摘要:

This chapter of "The Oxford Handbook of Nanoscience and Technology: Frontiers and Advances" reviews nonequilibrium Green function (NEGF) approach to modeling spin current generation, transport, and detection in semiconductor nanostructures containing different types of spin-orbit (SO) couplings. Its tutorial style--with examples drawn from the field of the spin Hall effects (SHEs) and with treatment of the Rashba, Dresselhaus and extrinsic SO couplings--offers practical recipes to compute total spin and charge currents flowing out of the device, as well as the nonequilibrium local spin densities and spin fluxes within the multiterminal nanostructure. These quantities, which are obtained from the knowledge of spin-resolved NEGFs that can describe both ballistic and diffusive transport regimes while handling phase-coherent effects or dephasing mechanisms relevant at room temperature, can be employed to understand recent experiments on all-electrical detection of mesoscopic and quantum SHE in complicated low-dimensional nanostructures, as well as to model a multitude of "second generation" spintronic devices exploiting coherent spin dynamics. The chapter also provides extensive coverage of relevant technical and computational details, such as: (i) the construction of retarded and lesser Green functions for SO-coupled nanostructures attached to many electrodes; (ii) computation of self-energies introduced by different types of electrodes attached to the central region; and (iii) accelerated algorithms for NEGF evaluation that make possible spin transport modeling in devices of the size comparable to the spin precession length (typically few hundreds of nanometers) that sets the scale where mesoscopic SHE effect in ballistic SO-coupled nanostructures is expected to reach its optimal magnitude.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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