分子束外延生长NdFeAsO薄膜
Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy
摘要：
用分子束外延（MBE）方法在GaAs衬底上生长了NdFeAsO外延薄膜。包括氧在内的所有元素都是使用Knudsen电池从固体来源提供的。用最佳生长条件制备的薄膜的X射线衍射图显示没有杂质相的迹象。只有（00l）峰被观察到，表明NdFeAsO以c轴垂直于衬底生长。最佳生长条件的窗口很窄，但NdFeAsO相的生长具有很好的再现性。尽管没有任何明显的第二相，电阻率表现出随温度降低而增加。
英文摘要：
Epitaxial films of NdFeAsO were grown on GaAs substrates by molecular beam epitaxy (MBE). All elements including oxygen were supplied from solid sources using Knudsen cells. The x-ray diffraction pattern of the film prepared with the optimum growth condition showed no indication of impurity phases. Only (00l) peaks were observed, indicating that NdFeAsO was grown with the c-axis perpendicular to the substrate. The window of optimum growth condition was very narrow, but the NdFeAsO phase was grown with a very good reproducibility. Despite the absence of any appreciable secondary phase, the resistivity showed an increase with decreasing temperature.
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