拓扑绝缘体（Bi1-xSbx）2 Te 3中诱导超导性的自外延新方法
Novel self-epitaxy for inducing superconductivity in the topological insulator (Bi1-xSbx)2Te3
摘要：
利用超导邻近效应在拓扑绝缘体（TI）中构造拓扑超导态是实现Majorana费米子的一条很有前途的途径。然而，在TI表面上外延生长超导体以实现良好的邻近效应一直是一个挑战。我们发现，简单地在TI材料（Bi $_{1-x}$ Sb $_x$）$_2$ Te $_3$薄膜上沉积Pd导致具有~1 K超导转变温度的PdTe $_2$超导体的外延自形成。这种自形成的超导体接近TI，这通过在（Bi $_{1-x}$ Sb $_x$）$_2$ Te $_3$上制成的约瑟夫森结器件中出现超电流来证实。这种自外延现象可以方便地用于制备基于TI的超导纳米器件，以解决TI中的超导邻近效应。
英文摘要：
Using the superconducting proximity effect for engineering a topological superconducting state in a topological insulator (TI) is a promising route to realize Majorana fermions. However, epitaxial growth of a superconductor on the TI surface to achieve a good proximity effect has been a challenge. We discovered that simply depositing Pd on thin films of the TI material (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ leads to an epitaxial self-formation of PdTe$_2$ superconductor having the superconducting transition temperature of ~1 K. This self-formed superconductor proximitizes the TI, which is confirmed by the appearance of a supercurrent in Josephson-junction devices made on (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$. This self-epitaxy phenomenon can be conveniently used for fabricating TI-based superconducting nanodevices to address the superconducting proximity effect in TIs.
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