Observation of tunneling gap in epitaxial ultrathin films of pyrite-type copper disulfide

英文摘要：

We report scanning tunneling microscopy investigation on epitaxial ultrathin films of pyrite-type copper disulfide. Layer by layer growth of CuS2 films with a preferential orientation of (111) on SrTiO3(001) and Bi2Sr2CaCu2O8+δ substrates is achieved by molecular beam epitaxy growth. For ultrathin films on both kinds of substrates, we observed symmetric tunneling gap around Fermi level that persists up to ~ 15 K. The tunneling gap degrades with either increasing temperature or increasing thickness, suggesting new matter states at the extreme two dimensional limit.