Current auto- and cross-correlations are studied in a system of two capacitively coupled quantum dots. We are interested in a role of Coulomb interaction in dynamical correlations, which occur outside the Coulomb blockade region (for high bias). After decomposition of the current correlation functions into contributions between individual tunneling events, we can show which of them are relevant and lead to sub-/supper-Poissonian shot noise and negative/positive cross-correlations. The results are differentiated for a weak and strong inter-dot coupling. Interesting results are for the strong coupling case when electron transfer in one of the channel is strongly correlated with charge drag in the second channel. We show that cross-correlations are non-monotonic functions of bias voltage and they are in general negative (except some cases with asymmetric tunnel resistances). This is effect of local potential fluctuations correlated by Coulomb interaction, which mimics the Pauli exclusion principle.
Electronic structure and transport characteristics of coupled CdS and ZnSe quantum dots are studied using density functional theory and non equilibrium Greens function method respectively. Our investigations show that in these novel coupled dots, the frontier occupied and unoccupied molecular orbitals are spatially located in two different parts of the coupled dot, thereby indicating the possibility of asymmetry in electronic transport. We have calculated electronic transport through the coupled quantum dot by varying the coupling strength between the individual quantum dots in the limits of w…
We calculate that the electron states of strained self-assembled Ge/Si quantum dots provide a convenient two-state system for electrical control. An electronic state localized at the apex of the quantum dot is nearly degenerate with a state localized at the base of the quantum dot. Small electric fields shift the electronic ground state from apex-localized to base-localized, which permits sensitive tuning of the electronic, optical and magnetic properties of the dot. As one example, we describe how spin-spin coupling between two Ge/Si dots can be controlled very sensitively by shifting the ind…
In this work the intersubband electronic properties of two laterally coupled dome-shaped InAs/GaAs quantum dots were investigated. The envelope functions and eigenenergies were calculated as function of distance between the dots. The coupling between the dots was studied using transition lifetime between the dots. The results showed that in close distances (smaller than 3 nm) the quantum dots are coupled and by increasing the distance transition lifetime fall down drastically and the dots become uncoupled.
Semiconductor coupled quantum dots provide a unique opportunity of tuning bandgaps by tailoring band offsets, making them ideal for photovoltaic and other applications. Here, we have studied stability, trends in the band gap, band offsets, and optical properties for a series of coupled quantum dots comprised of II-VI semiconductor using a hybrid functional method. We have shown how the quantum confinement and interfacial strain considerably affect the band gap and band offsets for these heterostructures at the nanoscale. We show that the trend in band offsets obtained from our first-principles…
We report on a atomistic theory of electronic structure and optical properties of a single InAs quantum dot grown on InP patterned substrate. The spatial positioning of individual dots using InP nano-templates results in a quantum dot embedded in InP pyramid. The strain distribution of a quantum dot in InP pyramid is calculated using the continuum elasticity theory. The electron and valence hole single-particle states are calculated using atomistic effective-bond-orbital model with second nearest-neighbor interactions, coupled to strain via Bir-Pikus Hamiltonian. The optical properties are det…
We calculate the electronic structure of nm scale InP islands embedded in $Ga_{0.51}In_{0.49}P$. The calculations are done in the envelope approximation and include the effects of strain, piezoelectric polarization, and mixing among 6 valence bands. The electrons are confined within the entire island, while the holes are confined to strain induced pockets. One pocket forms a ring at the bottom of the island near the substrate interface, while the other is above the island in the GaInP. The two sets of hole states are decoupled. Polarization dependent dipole matrix elements are calculated for b…
Density-functional theory is used to study the electronic structure of quantum dots in a magnetic field. New series of magic numbers are found for the total angular momentum of electrons. The empirical formula for the plateau width is obtained. The effect of a charged impurity on the electronic structure of a quantum dot has been studied.
We have studied the electronic structure of CdS/ZnSe coupled quantum dot, a novel heterostructure at the nano-scale. Our calculations reveal CdS/ZnSe coupled quantum dots to be of type-II in nature where the anion-p states play an important role in deciding the band offset for the highest occupied molecular orbitals (HOMO). We show that the offsets of HOMO as well as the lowest unoccupied molecular orbitals (LUMO) can be tuned by changing the sizes of the components of the coupled quantum dot, thereby providing an additional control parameter to tune the band gap and the optical properties. Ou…
Electronic properties of quantum dots (QDs) depend sensitively on their parent materials. Therefore, confined electronic states in graphene QDs (GQDs) of monolayer and Bernal-stacked bilayer graphene are quite different. Twisted bilayer graphene (TBG) is distinct from monolayer and Bernal-stacked bilayer graphene because of the new degree of freedom: twist angle. In the past few years, numerous efforts have been made to realize the GQDs of monolayer and Bernal-stacked bilayer graphene and achieved great success. Thus far, however, strategies for realizing GQDs of TBG have been elusive. Here, w…
We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ segments create significant barriers for electron transport. We find a direct correlation of transport properties with quantum dot length and corresponding growth time of the enclosed ZB segment. The correlation is made possible by using a method to extract lengths of nanowire crystal phase segments directly from scanning electron microscopy images, and wit…
We report measurements of low-frequency electronic noise in ordered superlattice, weakly-ordered and random-packed thin films of 6.5 nm PbSe quantum dots prepared using several different ligand chemistries. For all samples, the normalized noise spectral density of the dark current revealed a Lorentzian component, reminiscent of the generation-recombination noise, superimposed on the 1/f background (f is the frequency). An activation energy of 0.3 eV was extracted from the temperature dependence of the noise spectra. The noise level in the ordered films was lower than that in the weakly-ordered…
The electronic spin precession in semiconductor dots is strongly affected by the spin-orbit coupling. We present a theory of the electronic spin resonance at low magnetic fields that predicts a strong dependence on the dot occupation, the magnetic field and the spin-orbit coupling strength. Coulomb interaction effects are also taken into account in a numerical approach.
We investigate the effects of point charge defects on the single particle electronic structure, emission energies, fine structure splitting and oscillator strengths of excitonic transitions in strained In$_{0.6}$Ga$_{0.4}$As/GaAs and strain-free GaAs/Al$_{0.3}$Ga$_{0.7}$As quantum dots. We find that the charged defects significantly modify the single particle electronic structure and excitonic spectra in both strained and strain-free structures. However, the excitonic fine structure splitting, polarization anisotropy and polarization direction in strained quantum dots remain nearly unaffected,…
This work analyzes carrier transport, the relaxation of non-equilibrium charge, and the electronic structure of fluorinated graphene (FG) films with graphene quantum dots (GQDs). The FG films with GQDs were fabricated by means of chemical functionalization in an aqueous solution of hydrofluoric acid. High fluctuations of potential relief inside the FG barriers have been detected in the range of up to 200 mV. A phenomenological expression that describes the dependence of the time of non-equilibrium charge emission from GQDs on quantum confinement levels and film thickness (potential barrier par…
We present a study of the electronic structure of two laterally coupled gaussian quantum dots filled with two particles. The exact diagonalization method has been used in order to inspect the spatial correlations and examine the particular spin singlet-triplet configurations for different coupling degrees between quantum dots. The outcome of our research shows this structure to have highly modifiable properties promoting it as an interesting quantum device, showing the possible use of this states as a quantum bit gate.
The authors report that anisotropic confining potentials in laterally-coupled semiconductor quantum dots (QDs) have large impacts in optical transitions and energies of inter-shell collective electronic excitations. The observed anisotropies are revealed by inelastic light scattering as a function of the in-plane direction of light polarization and can be finely controlled by modifying the geometrical shape of the QDs. These experiments show that the tuning of the QD confinement potential offers a powerful method to manipulate electronic states and far-infrared inter-shell optical transitions …
This paper presents a six-band k.p theory for wurtzite semiconductor nanostructures with cylindrical symmetry. Our work extends the formulation of Vahala and Sercel [Physical Review Letters 65, 239 (1990)] to the Rashba-Sheka-Pikus Hamiltonian for wurtzite semiconductors, without the need for the axial approximation. Results comparing our formulation for studying the electronic structure of wurzite quantum dots with the conventional formulation are given.
First-order perturbation theory and many-body Green function analysis are used to quantify the influence of size, surface reconstruction and surface treatment on exciton transport between small silicon quantum dots. Competing radiative processes are also considered in order to determine how exciton transport efficiency is influenced. The analysis shows that quantum confinement causes small (~1 nm) Si quantum dots to exhibit exciton transport efficiencies far exceeding that of their larger counterparts. We also find that surface reconstruction significantly influences the absorption cross secti…
We study electron transport through double quantum dots in series. The tunnel coupling of the discrete dot levels to external leads causes a shift of their energy. This energy renormalization affects the transport characteristics even in the limit of weak dot-lead coupling, when sequential transport dominates. We propose an experimental setup which reveals the renormalization effects in either the current-voltage characteristics or in the stability diagram.
Electronic transport through a triple quantum dot system, with only a single dot coupled directly to external leads, is considered theoretically. The model includes Coulomb correlations in the central dot, while such correlations in the two side-coupled dots are omitted. The infinite-U mean-field slave-boson approach is used to obtain basic transport characteristics in the Kondo regime. When tuning position of the side-coupled dots' levels, transition from subradiant to superradiant like mode (and vice versa) has been found in the spectral function, in analogy to the Dicke effect in atomic phy…
We theoretically investigate the absorption and emission of light carrying orbital angular momentum (twisted-light) by quasi-two-dimensional (disc-shaped) quantum dots in the presence of a static magnetic field. We calculate the transition matrix element for the light-matter interaction and use it to explore different scenarios, depending on the initial and final state of the electron undergoing the optically-induced transition. We make explicit the selection rule for the conservation of the z-projection of the orbital angular momentum. For a realistic set of parameters (quantum dots size, bea…
We study the transport through evanescent waves in graphene quantum dots of different geometries. The transmission is suppressed when the leads are attached to edges of the same majority sublattice. Otherwise, the transmission depends exponentially on the distance between leads in rectangular dots, and as a power law in circular dots. The transmission through junctions where the transmitted and reflected currents belong to the opposite valley as the incoming one depends on details of the lattice structure at distances comparable to the atomic spacing.
Recent controversy on the quantum dots dephasing mechanisms (between pure and inelastic) is re-examined by isolating the quantum dots from their substrate by using the appropriate limits of the ionization energy theory and the quantum adiabatic theorem. When the phonons in the quantum dots are isolated adiabatically from the phonons in the substrate, the elastic or pure dephasing becomes the dominant mechanism. On the other hand, for the case where the phonons from the substrate are non-adiabatically coupled to the quantum dots, the inelastic dephasing process takes over. This switch-over is d…
We derive a complete expression for the interaction correction to the $I-V$ curve of two connected in series metallic quantum dots. For strongly asymmetric dots in a wide range of parameters this interaction correction depends logarithmically on voltage and temperature.
Electronic properties of triangular and hexagonal nano-scale quantum dots (QDs) of Silicene and bilayer graphene are studied. It is shown that the low-energy edge-localized electronic states, existing within the size-quantized gap are easily tunable by electric field. The appearance and field evolution of the electronic gap in these zero energy states (ZES) is shown to be very sensitive to QD geometry that permits to design the field-effect scalable QD devices with electronic properties on-demand.
The electronic structure of InAs quantum dots covered with the GaAs(1-y)Sb(y) strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with increasing y and its blue shift with increasing excitation power. For y>0.19 type-II dots are formed with holes localized in the GaAsSb close to the dot base; two segments at opposite sides of the dot, forming molecular-like states, result from the piezoelectric field. We also propose an experiment that could be used to identify the hole localization using …
Strong spin-orbit interaction characteristic for p-type GaAs systems, makes such systems promising for the realization of spintronic devices. Here we report on transport measurements in nanostructures fabricated on p-type, C-doped GaAs heterostructures by scanning probe oxidation lithography. We observe conductance quantization in a quantum point contact, as well as pronounced Coulomb resonances in two quantum dots with different geometries. Charging energies for both dots, extracted from Coulomb diamond measurements are in agreement with the lithographic dimensions of the dots. The absence of…
We present Coulomb blockade measurements in a graphene double dot system. The coupling of the dots to the leads and between the dots can be tuned by graphene in-plane gates. The coupling is a non-monotonic function of the gate voltage. Using a purely capacitive model, we extract all relevant energy scales of the double dot system.
We study the electronic and magnetic properties of multilayer quantum dots (MQDs) of graphite in the nearest-neighbor approximation of tight-binding model. We calculate the electronic density of states and orbital susceptibility of the system as function of the Fermi level location. We demonstrate that properties of MQD depend strongly on the shape of the system, on the parity of the layer number and on the form of the cluster edge. The special emphasis is given to reveal the new properties with respect to the monolayer quantum dots of graphene. The most interesting results are obtained for th…
Detailed theoretical studies of the electronic structure of (InGa)(AsSb)/GaAs/GaP quantum dots are presented. This system is unique since it exhibits concurrently direct and indirect transitions both in real and momentum space and is attractive for applications in quantum information technology, showing advantages as compared to the widely studied (In,Ga)As/GaAs dots. We proceed from the inspection of the confinement potentials for ${\bf k}\neq 0$ and ${\bf k}= 0$ conduction and ${\bf k}= 0$ valence bands, through the formulation of ${\bf k}\cdot{\bf p}$ calculations for ${\bf k}$-indirect tra…
The symmetry properties of transport beyond the linear regime in chaotic quantum dots are investigated experimentally. A component of differential conductance that is antisymmetric in both applied source-drain bias V and magnetic field B, absent in linear transport, is found to exhibit mesoscopic fluctuations around a zero average. Typical values of this component allow a measurement of the electron interaction strength.
Graphene quantum dots are considered as promising alternatives to quantum dots in III-V semiconductors, e.g., for the use as spin qubits due to their consistency made of light atoms including spin-free nuclei which both imply relatively long spin decoherene times. However, this potential has not been realized in experiments so far, most likely, due to a missing control of the edge configurations of the quantum dots. Thus, a more fundamental investigation of Graphene quantum dots appears to be necessary including a full control of the wave function properties most favorably during transport spe…
We present a fully electronic analogue of coherent population trapping in quantum optics, based on destructive interference of single-electron tunneling between three quantum dots. A large bias voltage plays the role of the laser illumination. The trapped state is a coherent superposition of the electronic charge in two of these quantum dots, so it is destabilized as a result of decoherence by coupling to external charges. The resulting current I through the device depends on the ratio of the decoherence rate Gamma_phi and the tunneling rates. For Gamma_phi --> 0 one has simply I=e Gamma_phi. …
Spin-dependent transport through two coupled single-level quantum dots weakly connected to ferromagnetic leads with collinear magnetizations is considered theoretically. Transport characteristics, including the current, linear and nonlinear conductance, and tunnel magnetoresistance are calculated using the real-time diagrammatic technique in the parallel, serial, and intermediate geometries. The effects due to virtual tunneling processes between the two dots via the leads, associated with off-diagonal coupling matrix elements, are also considered. Negative differential conductance and negative…
We investigate the electronic transport through a suspended carbon-nanotube quantum dot. In the presence of a magnetic field perpendicular to the nanotube and a nearby metallic gate, two forces act on the electrons: the Laplace and the electrostatic force. They both induce coupling between the electrons and the mechanical transverse oscillation modes. We find that the difference between the two mechanisms appears in the cotunneling current.
We study transport through double quantum dots coupled to normal and superconducting leads, where the Andreev reflection plays a key role in determining characteristic transport properties. We shall discuss two typical cases, i.e. double dots with serial or parallel geometry. For the parallel geometry, the interference of electrons via multiple paths is induced, so that the transmission probability has Fano-type dip structures which are symmetric with respect to the Fermi energy. We also investigate the Aharonov-Bohm(AB) effect for the parallel geometry. In some particular situations, we find …
The effects of edge hydrogenation and hydroxylation on the relative stability and electronic properties of hexagonal boron nitride quantum dots (h-BNQDs) are investigated. Zigzag edge hydroxylation is found to result in considerable energetic stabilization of h-BNQDs as well as a reduction of their electronic gap with respect to their hydrogenated counterparts. The application of an external in-plane electric field leads to a monotonous decrease of the gap. When compared to their edge-hydrogenated counterparts, significantly lower field intensities are required to achieve full gap closure of t…
We report tunneling spectroscopy experiments on a bilayer graphene double quantum dot device that can be tuned by all-graphene lateral gates. The diameter of the two quantum dots are around 50 nm and the constrictions acting as tunneling barriers are 30 nm in width. The double quantum dot features addition energies on the order of 20 meV. Charge stability diagrams allow us to study the tunable interdot coupling energy as well as the spectrum of the electronic excited states on a number of individual triple points over a large energy range. The obtained constant level spacing of 1.75 meV over a…
We study the spectrum and the transport properties of two identical, vertically coupled quantum dots in a perpendicular magnetic field. We find correlation-induced energy crossings in a magnetic field sweep between states differing only in the vertical degree of freedom. Considering the influence of a slight asymmetry between the dots caused by the applied source-drain voltage in vertical transport experiments these crossings convert to anticrossings accompanied by the build-up of charge polarization which is tunable by the perpendicular magnetic field. The polarization strongly affects the ve…
We theoretically investigate electron transport through an Aharonov-Bohm interferometer containing laterally coupled double quantum dots. We introduce the indirect coupling parameter $α$, which characterizes the strength of the coupling via the reservoirs between two quantum dots. $|α|=1$ indicates the strongest coupling, where only a single mode contributes to the transport in the system. Two conduction modes exist in a system where $|α|\neq 1$. The interference effects such as the Fano resonance and the Aharonov-Bohm oscillation are suppressed as the absolute value of the parameter $α$ decre…
We apply an elementary measurement scheme to calculate the electronic triplet-singlet transition mediated by hyperfine interaction in a double quantum dot. We show how the local character of the hyperfine interaction and the nuclear back-action process (flip-flop) are crucial to cancel destructive interferences of the triplet-singlet transition probability. It is precisely this cancellation which differentiates the hyperfine interaction from an anisotropic magnetic field which mixes the triplet and the singlet eigenstates.
We theoretically investigate the electronic and magneto-optical properties of rectangular, hexangular, and triangular monolayer phosphorene quantum dots (MPQDs) utilizing the tight-binding method. The electronic states, density of states, electronic density distribution, and Laudau levels as well as the optical absorption spectrum are calculated numerically. Our calculations show that: (1) edge states appear in the band gap in all kinds of MPQDs regardless of their shapes and edge configurations due to the anisotropic electron hopping in monolayer phosphorene (MLP). Electrons in any edge state…
We study the sub-gap spectrum and the transport properties of a double quantum dot coupled to metallic and superconducting leads. The coupling of both quantum dots to the superconducting lead induces a non-local pairing in both quantum dots by the Andreev reflection processes. Additionally, we obtain two channels of Cooper pair tunneling into a superconducting lead. In such a system, the direct tunneling process (by one of two dots) or the crossed tunneling process (by both quantum dots at the same time) is possible. We consider the dependence of the Andreev transmittance on an inter-dot tunne…
We investigate the conductance of a quantum wire with two embedded quantum dots using a T-matrix approach based on the Lippmann-Schwinger formalism. The quantum dots are represented by a quantum well with Gaussian shape and the wire is two-dimensional with parabolic confinement in the transverse direction. In a broad wire the transport can assume a strong nonadiabatic character and the conductance manifests effects caused by intertwined inter- and intra-dot processes that are identified by analysis of the ``nearfield'' probability distribution of the transported electrons.
We present a transport setup of coupled quantum dots that enables the creation of spatially separated spin-entangled two-electron dark states. We prove the existence of an entangled transport dark state by investigating the system Hamiltonian without coupling to the electronic reservoirs. In the transport regime the entangled dark state which corresponds to a singlet has a strongly enhanced Fano factor compared to the dark state which corresponds to a mixture of the triplet states. Furthermore we calculate the concurrence of the occupying electrons to show the degree of entanglement in the tra…
Motivated by recent experiments on electric transport through single molecules and quantum dots, we investigate a model for transport that allows for significant coupling between the electrons and a boson mode isolated on the molecule or dot. We focus our attention on the temperature dependent properties of the transport. In the Holstein picture for polaronic transport in molecular crystals the temperature dependence of the conductivity exhibits a crossover from coherent (band) to incoherent (hopping) transport. Here, the temperature dependence of the differential conductance on resonance does…
We report on theoretical studies of transport through graphene quantum dots weakly coupled to external ferromagnetic leads. The calculations are performed by exact diagonalization of a tight-binding Hamiltonian with finite Coulomb correlations for graphene sheet and by using the real-time diagrammatic technique in the sequential and cotunneling regimes. The emphasis is put on the role of graphene flake shape and spontaneous edge magnetization in transport characteristics, such as the differential conductance, tunneling magnetoresistance (TMR) and the shot noise. It is shown that for certain sh…
In this work, we investigate the electronic and optical properties of the b-AsP quantum dots(QDs) and quantum rings(QRs) with different edge types in the presence of an in-plane electric field and a perpendicular magnetic field utilizing the tight-binding method. Our calculations show that the electronic and optical properties of edge states largely depend on the edge types. By adjusting the intensity of the electric field or magnetic field, the probability density can be effectively tuned. In particular, under an in-plane electric field, novel edge states emerge in rhombus QDs and QRs with δ …
In this work, we present and evaluate a (111)-rotated eight-band $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian for the zinc-blende crystal lattice to investigate the electronic properties of site-controlled InGaAs/GaAs quantum dots grown along the [111] direction. We derive the rotated Hamiltonian including strain and piezoelectric potentials. In combination with our previously formulated (111)-oriented continuum elasticity model, we employ this approach to investigate the electronic properties of a realistic site-controlled (111)-grown InGaAs quantum dot. We combine these studies with an evaluation…
We examine the full counting statistics of electron transport through double quantum dots coupled in series, with particular attention being paid to the unique features originating from level renormalization. It is clearly illustrated that the energy renormalization gives rise to a dynamic charge blockade mechanism, which eventually results in super-Poissonian noise. Coupling of the double dots to an external heat bath leads to dephasing and relaxation mechanisms, which are demonstrated to suppress the noise in a unique way.
We present here results of atomistic theory of electrons confined by metallic gates in a single layer of transition metal dichalcogenides. The electronic states are described by the tight-binding model and computed using a computational box including up to million atoms with periodic boundary conditions and parabolic confining potential due to external gates embedded in it. With this methodology applied to MoS2, we find a twofold degenerate energy spectrum of electrons confined in the two non-equivalent K-valleys by the metallic gates as well as six-fold degenerate spectrum associated with Q-v…
The transport through a quantum wire exposed to two magnetic spikes in series is modeled. We demonstrate that quantum dots can be formed this way which couple to the leads via magnetic barriers. Conceptually, all quantum dot states are accessible by transport experiments. The simulations show Breit-Wigner resonances in the closed regime, while Fano resonances appear as soon as one open transmission channel is present. The system allows to tune the dot's confinement potential from sub-parabolic to superparabolic by experimentally accessible parameters.
We consider theoretically the transport through the double quantum dot structure of the recent experiment of C. Payette {\it et al.} [Phys. Rev. Lett. {\bf 102}, 026808 (2009)] and calculate stationary current and shotnoise. Three-level mixing gives rise to a pronounced current suppression effect, the character of which charges markedly with bias direction. We discuss these results in connexion with the dark states of coherent population trapping in quantum dots.
We present theoretical results concerning inelastic light (Raman) scattering from semiconductor quantum dots. The characteristics of each dot state (whether it is a collective or single-particle excitation, its multipolarity, and its spin) are determined independently of the Raman spectrum, in such a way that common beliefs used for level assignments in experimental spectra can be tested. We explore the usefulness of below band gap excitation and an external magnetic field to identify charge and spin excited states of a collective or single-particle nature.
We present a detailed theoretical investigation of the effect of Coulomb interactions on electron transport through quantum dots and double barrier structures connected to a voltage source via an arbitrary linear impedance. Combining real time path integral techniques with the scattering matrix approach we derive the effective action and evaluate the current-voltage characteristics of quantum dots at sufficiently large conductances. Our analysis reveals a reach variety of different regimes which we specify in details for the case of chaotic quantum dots. At sufficiently low energies the intera…
The effects of interplay between spin-orbit coupling and Zeeman splitting on weak localisation and universal conductance fluctuations in lateral semiconductor quantum dots are analysed: All possible symmetry classes of corresponding random matrix theories are listed and crossovers between them achievable by sweeping magnetic field and changing the dot parameters are described. We also suggest experiments to measure the spin-orbit coupling constants.
The role of non-equilibrium effects in the conductance through quantum dots is investigated. Associated with single-electron tunneling are shake-up processes and the formation of excitonic-like resonances. They change qualitatively the low temperature properties of the system. We analyze by quantum Monte Carlo methods the renormalization of the effective capacitance and the gate-voltage dependent conductance. Experimental relevance is discussed.
We systematically investigate electron transport through double quantum dots with particular emphasis on interference induced via multiple paths of electron propagation. By means of the slave-boson mean-field approximation, we calculate the conductance, the local density of states, the transmission probability in the Kondo regime at zero temperature. It is clarified how the Kondo-assisted transport changes its properties when the system is continuously changed among the serial, parallel and T-shaped double dots. The obtained results for the conductance are explained in terms of the Kondo reson…
Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and nonlinear optical effect. Due to advantages like less crystal defects and relatively simpler fabrication technology, that material may be of important value in future nanoelectronic device researches. In the order of vertical transport, lateral transport and charge storage, this paper gives a brief introduction of recent advances in the electronic properties of t…
