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arXiv 0907.1010cond-mat.mes-hall
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基于射频量子点接触的Single Shot电荷探测

Single Shot Charge Detection Using A Radio-Frequency Quantum Point Contact

M. C. Cassidy, A. S. Dzurak, R. G. Clark, K. D. Petersson, I. Farrer, D. A. Ritchie, C. G. Smith

摘要:

本文报道了利用射频量子点接触(rf-QPC)对GaAs半导体量子点器件的电荷传感测量。的rf-QPC是充分的特点,在4 K和毫开尔文温度,并发现具有超过20 MHz的带宽。对于单次电荷感测,我们实现了2x 10 ^-4 e/(sqrt)Hz的电荷灵敏度(参考相邻点的电荷)。rf-QPC与rf-SET静电计相比毫不逊色,有望成为在快速时标上表征和测量半导体量子系统的非常有用的工具。

英文摘要:

We report on charge sensing measurements of a GaAs semiconductor quantum dot device using a radio frequency quantum point contact (rf-QPC). The rf-QPC is fully characterized at 4 K and milli-Kelvin temperatures and found to have a bandwidth exceeding 20 MHz. For single-shot charge sensing we achieve a charge sensitivity of 2x10^-4 e/(sqrt)Hz referred to the neighboring dot's charge. The rf-QPC compares favorably with rf-SET electrometers and promises to be an extremely useful tool for characterizing and measuring semiconductor quantum systems on fast timescales.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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