11 pages, 3 figures. This article is identical to the version that appeared in Appl. Phys. Lett. 88, 203506 (2006). The published version can be found at http://apl.aip.org/
We fabricate and characterize a radio-frequency semiconductor point-contact electrometer (RF-PC) analogous to radio-frequency single-electron transistors [RF-SETs, see Science {\bf 280}, 1238 (1998)]. The point contact is formed by surface Schottky gates in a two-dimensional electron gas (2DEG) in an AlGaAs/GaAs heterostructure. In the present setup, the PC is operating as a simple voltage-controlled resistor rather than a quantum point contact (QPC) and demonstrates a charge-sensitivity about $2\times 10^{-1} \mathrm{e/\sqrt{Hz}}$ at a bandwidth of $30 \mathrm{kHz}$ without the use of a cryogenic RF preamplifier. Since the impedance of a typical point-contact device is much lower than the impedance of the typical SET, a semiconductor-based RF-PC, equipped with practical cryogenic RF preamplifiers, could realize an ultra-fast and ultra-sensitive electrometer.
Small-signal model for 2D-material based field-effect transistors targeting radio-frequency applications: the importance of considering non-reciprocal capacitances
Radio-frequency charge detection on graphene electron-hole double quantum dots
RWTH Aachen University（亚琛工业大学）；JARA-FIT（JARA-信息技术联合研究中心）；Peter Grünberg Institute (PGI-9)（彼得·格林贝格研究所（PGI-9））；Forschungszentrum Jülich（于利希研究中心）；Institute for Theoretical Physics, TU Wien（维也纳技术大学理论物理研究所）；Humboldt Universität zu Berlin（柏林洪堡大学）；CST – Compound Semiconductor Technology, RWTH Aachen University（亚琛工业大学化合物半导体技术部门）；National Institute for Materials Science（日本国立材料研究所）
Role of the Casimir force in the capacitive radio-frequency microelectromechanical switches
Central Astronomical Observatory at Pulkovo of the Russian Academy of Sciences（俄罗斯科学院普尔科沃中央天文台）；Peter the Great Saint Petersburg Polytechnic University（彼得大帝圣彼得堡理工大学）
