部分开孔氮化硅膜的低温热传输
Low Temperature Thermal Transport in Partially Perforated Silicon Nitride Membranes
摘要：
在0.3 ~ 0.6 K的温度范围内，用过渡边缘传感器（TES）作为薄膜加热的唯一源，研究了部分沟槽氮化硅薄膜的热输运。测试配置由在1微米厚、6平方毫米大小的氮化硅膜上光刻限定的Mo/Au TES组成。在TES和硅框架之间加入了深度可变的沟槽，以管理热传输。结果表明，在膜表面的尖锐的功能，如沟槽，显着阻碍的声子传输模式。观察到热阻对沟槽深度的非线性依赖关系。氮化硅膜的部分穿孔以控制热传输可用于制造机械坚固的检测器装置。
英文摘要：
The thermal transport in partially trenched silicon nitride membranes has been studied in the temperature range from 0.3 to 0.6 K, with the transition edge sensor (TES), the sole source of membrane heating. The test configuration consisted of Mo/Au TESs lithographically defined on silicon nitride membranes 1 micron thick and 6 mm^2 in size. Trenches with variable depth were incorporated between the TES and the silicon frame in order to manage the thermal transport. It was shown that sharp features in the membrane surface, such as trenches, significantly impede the modes of phonon transport. A nonlinear dependence of thermal resistance on trench depth was observed. Partial perforation of silicon nitride membranes to control thermal transport could be useful in fabricating mechanically robust detector devices.
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