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arXiv 0905.2748cond-mat.mes-hall
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分子传导结的冷却机制

Cooling mechanisms in molecular conduction junctions

Michael Galperin, Keiji Saito, Alexander V. Balatsky, Abraham Nitzan

摘要:

虽然载流欧姆导体的加热是这种系统中传导的扩散性质的明显结果,但最近在一些分子传导结中报道了电流诱导冷却。在本文中,我们证明了简单的模型下施加偏压冷却分子结的可能性,并讨论了这种效果的几种机制。我们的模型的特征是单电子在电极之间隧穿,电极由自由电子库表示,通过一个以电子能级、核振动及其结构为特征的系统。我们认为冷却mechasims导致从(a)冷却的一个电极表面的隧穿诱导耗尽的高能电子;(b)冷却的相干亚共振电子输运类似于原子激光诱导冷却和(c)的非相干模拟过程(b)-冷却驱动激活运输。在前两种情况下使用的结输运的非平衡格林函数制定,而主方程的方法应用在第三个分析。

英文摘要:

While heating of a current carrying Ohmic conductors is an obvious consequence of the diffusive nature of the conduction in such systems, current induced cooling has been recently reported in some molecular conduction junctions. In this paper we demonstrate by simple models the possibility of cooling molecular junctions under applied bias, and discuss several mechanisms for such an effect. Our model is characterized by single electron tunneling between electrodes represented by free electron reservoirs through a system characterized by it electron levels, nuclear vibrations and their structures. We consider cooling mechasims resulting from (a) cooling of one electrode surface by tunneling induced depletion of high energy electrons; (b) cooling by coherent sub resonance electronic transport analogous to atomic laser nduced cooling and (c) the incoherent analog of process (b) - cooling by driven activated transport. The non-equilibrium Green function formulation of junction transport is used in the first two cases, while a master equation approach is applied in the analysis of the third.

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