AI 中文总结
该研究利用TiW-Al-AlOx-Nb NIS超导隧道结对TiW正常金属岛实现电子冷却，在0.6-3.5 K区间获最大27%相对降温，其最优电压标度低于理想低温预测。
AI 中文摘要
钛钨（TiW）薄膜在低至毫开尔文温度下仍保持非超导性，且与大规模CMOS制造工艺兼容，因此适用于低温及量子隧道结器件，如正常金属-绝缘体-超导体（NIS）热传感器和电子冰箱。我们采用TiW-Al-AlOx-Nb NIS隧道结堆，实现了TiW基正常金属岛的显著电子冷却及电子测温。该NIS温度计可测量0.5至8.32 K范围内的局域电子温度；在0.6至3.5 K区间观测到NIS冷却效应，最大绝对温度降低217 mK，相对温度降低达27%。利用电流-电压拟合独立得到的隧道结参数进行计算，可复现测量的最优电压标度，该标度显著低于理想低温预测值。
英文摘要
TiW thin films remain non-superconducting down to millikelvin temperatures and are compatible with large-scale CMOS manufacturing, making them attractive for cryogenic and quantum tunnel-junction devices, such as normal-metal-insulator-superconductor (NIS) thermal sensors and electron refrigerators. We demonstrate significant electronic cooling of a TiW-based normal-metal island and electron thermometry by using TiW-Al-AlOx-Nb NIS tunnel-junction stacks. The NIS thermometer enables local electron temperature measurements from 0.5 to 8.32 K. NIS cooling is observed between 0.6 and 3.5 K, with maximum absolute and relative temperature reductions of 217 mK and 27%, respectively. Calculations using tunnel-junction parameters obtained independently from current-voltage fits reproduce the measured optimum-voltage scale, which lies substantially below the ideal low-temperature prediction.
Comments14 pages, 6 figures
