单层MoS $_2$中铁电畴图案控制的肖特基结态
Ferroelectric Domain Patterning Controlled Schottky Junction State in Monolayer MoS$_2$
摘要：
我们利用扫描探针控制的铁电顶层的畴图案化诱导单层MOS $_2$的导电特性之间的晶体管和结态的非易失性调制。在畴壁的存在下，MoS $_2$表现出整流的I-V，这是很好地描述了的电子发射模型。感应肖特基势垒高度在0.38 ~ 0.57 eV范围内变化，可通过SiO $_2$全局背栅进行调节，而调节范围敏感地依赖于导带尾陷阱态。我们的工作指出了一条新的路线，以实现范德华材料的可编程功能，并揭示了这些混合系统中的关键性能限制因素。
英文摘要：
We exploit scanning probe controlled domain patterning in a ferroelectric top layer to induce nonvolatile modulation of the conduction characteristic of monolayer MoS$_2$ between a transistor and a junction state. In the presence of a domain wall, MoS$_2$ exhibits rectified I-V that is well described by the thermionic emission model. The induced Schottky barrier height varies from 0.38 eV to 0.57 eV and is tunabe by a SiO$_2$ global back-gate, while the tuning range of depends sensitively on the conduction band tail trapping states. Our work points to a new route to achieving programmable functionalities in van der Waals materials and sheds light on the critical performance limiting factors in these hybrid systems.
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