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arXiv 0905.0406cond-mat.softcond-mat.other
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弹性应变对多孔材料中吸附过程的影响。的实验方法

Influence of Elastic Strains on the Adsorption Process in Porous Materials. An Experimental Approach

Annie Grosman, Camille Ortega

摘要:

本文的实验结果表明多孔固体的弹性形变对吸附过程的影响。通过在高掺硼(100)Si单晶上形成p+型多孔硅,我们可以制作相同的多孔层,或者由衬底支撑,或者从衬底分离。孔垂直于基底。这两个层对应的吸附等温线是不同的。在毛细凝聚之前的区域中,膜的吸附量低于支撑层,并且在较高的压力下观察到滞后回线。我们将此现象归因于吸附过程中两层所经历的不同弹性应变。对于支撑层,垂直于衬底的平面被约束为具有与衬底的原子间间距相同的原子间间距,使得弹性形变是单向的,在原子尺度上,并且沿着孔轴。当基底被移除时,发生三维变形,多孔系统可以为固体原子找到新的构型,这降低了系统吸附物-固体的自由能。这导致吸附量的减少和冷凝压力的增加。当层厚度从30微米增加到100微米时,支撑的多孔层的等温线向膜的等温线移动。这是由于衬底和多孔层之间的界面处的Si-Si键断裂导致衬底施加的应力松弛。膜是支撑层的松弛状态。

英文摘要:

The experimental results presented in this paper show the influence of the elastic deformation of porous solids on the adsorption process. With p+-type porous silicon formed on highly boron doped (100) Si single crystal, we can make identical porous layers, either supported by or detached from the substrate. The pores are perpendicular to the substrate. The adsorption isotherms corresponding to these two layers are distinct. In the region preceding capillary condensation, the adsorbed amount is lower for the membrane than for the supported layer and the hysteresis loop is observed at higher pressure. We attribute this phenomenon to different elastic strains undergone by the two layers during the adsorption process. For the supported layer, the planes perpendicular to the substrate are constrained to have the same interatomic spacing as that of the substrate so that the elastic deformation is unilateral, at an atomic scale, and along the pore axis. When the substrate is removed, tridimensional deformations occur and the porous system can find a new configuration for the solid atoms which decreases the free energy of the system adsorbate-solid. This results in a decrease of the adsorbed amount and in an increase of the condensation pressure. The isotherms for the supported porous layers shift toward that of the membrane when the layer thickness is increased from 30 to 100 microns. This is due to the relaxation of the stress exerted by the substrate as a result of the breaking of Si-Si bonds at the interface between the substrate and the porous layer. The membrane is the relaxed state of the supported layer.

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