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arXiv 0902.3514math.NAcs.NAmath-phmath.MP
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纳米器件中玻尔兹曼-泊松系统的不连续伽辽金求解器

A discontinuous Galerkin solver for Boltzmann Poisson systems in nano devices

University of Texas, Austin(德克萨斯大学奥斯汀分校);Università di Catania(卡塔尼亚大学);Brown University(布朗大学)

Yingda Cheng, Irene M. Gamba, Armando Majorana, Chi-Wang Shu

AI总结:

提出一种不连续伽辽金(DG)格式,用于确定性计算描述半导体器件中电子输运的玻尔兹曼-泊松系统的瞬态过程,并通过与WENO和DSMC方法的比较验证了其在模拟热电子输运中的有效性。

摘要:

在本文中,我们展示了一种不连续伽辽金(DG)格式应用于描述半导体器件中电子输运的玻尔兹曼-泊松系统瞬态确定性计算的结果。碰撞项模拟了光频声子相互作用,在对应于施加偏压下纳米尺度有源区的强能量条件下,这种相互作用变得占主导地位。所提出的数值技术是一种有限元方法,在非结构化网格上使用不连续分段多项式作为基函数。它被应用于模拟体硅、硅$n^+$-$n$-$n^+$二极管以及双栅12nm MOSFET中的热电子输运。此外,将所得结果与高阶WENO格式模拟和DSMC(离散模拟蒙特卡洛)求解器的结果进行了比较。

英文摘要:

In this paper, we present results of a discontinuous Galerkin (DG) scheme applied to deterministic computations of the transients for the Boltzmann-Poisson system describing electron transport in semiconductor devices. The collisional term models optical-phonon interactions which become dominant under strong energetic conditions corresponding to nano-scale active regions under applied bias. The proposed numerical technique is a finite element method using discontinuous piecewise polynomials as basis functions on unstructured meshes. It is applied to simulate hot electron transport in bulk silicon, in a silicon $n^+$-$n$-$n^+$ diode and in a double gated 12nm MOSFET. Additionally, the obtained results are compared to those of a high order WENO scheme simulation and DSMC (Discrete Simulation Monte Carlo) solvers.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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