A 20-band sp3d5s* spin-orbit-coupled, semi-empirical, atomistic tight-binding model is used with a semi-classical, ballistic, field-effect-transistor (FET) model, to examine the ON-current variations to size variations of [110] oriented PMOS nanowire devices. Infinitely long, uniform, rectangular nanowires of side dimensions from 3nm to 12nm are examined and significantly different behavior in width vs. height variations are identified and explained. Design regions are identified, which show minor ON-current variations to significant width variations that might occur due to lack of line width control. Regions which show large ON-current variations to small height variations are also identified. The considerations of the full band model here show that ON-current doubling can be observed in the ON-state at the onset of volume inversion to surface inversion transport caused by structural side size variations. Strain engineering can smooth out or tune such sensitivities to size variations. The cause of variations described is the structural quantization behavior of the nanowires, which provide an additional variation mechanism to any other ON-current variations such as surface roughness, phonon scattering etc.
A 20 band sp3d5s* spin-orbit-coupled, semi-empirical, atomistic tight-binding (TB) model is used with a semi-classical, ballistic, field-effect-transistor (FET) model, to theoretically examine the bandstructure carrier velocity and ballistic current in silicon nanowire (NW) transistors. Infinitely long, uniform, cylindrical and rectangular NWs, of cross sectional diameters/sides ranging from 3nm to 12nm are considered. For a comprehensive analysis, n-type and p-type metal-oxide-semiconductor (NMOS and PMOS) NWs in [100], [110] and [111] transport orientations are examined. In general, physical…
Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 20-band sp3d5s* spin-orbit-coupled (SO) atomistic tight-binding model coupled to a self consistent Poisson solver is used for the valence band dispersion calculation. A ballistic FET model is used to evaluate the capacitance and current-voltage characteristics. The dispersion shapes and curvatures are strong functions of device size, lattice orientation, and bias, and cannot be described within the effective mass approximation. The anis…
We study theoretically the current-induced magnetic domain wall motion in a metallic nanowire with perpendicular magnetic anisotropy. The anisotropy can reduce the critical current density of the domain wall motion. We explain the reduction mechanism and identify the maximal reduction conditions. This result facilitates both fundamental studies and device applications of the current- induced domain wall motion.
We study thermally assisted domain wall generation in perpendicular magnetic anisotropy CoFeB trilayer nanowires by the effect of Joule heating. The anomalous Hall effect is utilized to detect magnetization reversal in order to study the domain wall generation. We observe a statistical distribution in the switching process which is consistent with the thermal activation process. Our results show that the proposed method provides an efficient way for generating domain walls in perpendicular magnetic nanowires at predefined locations.
The demonstration of strong photoluminescence polarization anisotropy in semiconducting nanowires embodies both technological promise and scientific challenge. Here we present progress on both fronts through the study of the photoluminescence polarization anisotropy of randomly oriented nanowire ensembles in materials without/with crystalline anisotropy, small/wide bandgap, and both III-V/II-VI chemistry (InP/ZnO nanowires, respectively). Comprehensive control of the polarization anisotropy is realized by dielectric matching with conformally deposited Ta2O5 (dielectric ratios of 9.6:4.41 and 4…
Detailed understanding of spin dynamics in magnetic nanomaterials is necessary for developing ultrafast, low-energy and high-density spintronic logic and memory. Here, we develop micromagnetic models and analytical solutions to elucidate the effect of increasing damping and uniaxial anisotropy on magnetic field pulse-assisted switching time, energy and field requirements of nanowires with perpendicular magnetic anisotropy and yttrium iron garnet-like spin transport properties. A nanowire is initially magnetized using an external magnetic field pulse (write) and self-relaxation. Next, magnetic …
Spin torque oscillators (STOs) are emerging microwave devices that can potentially be used in spin-logic devices and the next-generation high-speed computing architecture. Thanks to their non-linear nature, STOs are easily tunable by the magnetic field and the dc current. Spin Hall nano-oscillators (SHNOs) are promising types of STOs and most of the current studies focus on localized modes that can be easily excited. Here, we study using micromagnetic simulations, the nature of the spin-torque-induced excitations in nanowire devices made of perpendicular magnetic anisotropy (PMA) material. Our…
The thermophysical properties near the magnetic phase transition point is of great importance in the study of critical phenomenon. Low-dimensional materials are suggested to hold different thermophysical properties comparing to their bulk counterpart due to the dimension induced quantum confinement and anisotropy. In this work, we measured the thermal conductivity of $α$-Fe$_2$O$_3$ nanowires along [110] direction (growing direction) with temperature from 100K to 150K and found a dip of thermal conductivity near the Morin temperature. We found the thermal conductivity near Morin temperature va…
We present angle-dependent measurements of the effective g-factor g* in a Ge-Si core-shell nanowire quantum dot. g* is found to be maximum when the magnetic field is pointing perpendicular to both the nanowire and the electric field induced by local gates. Alignment of the magnetic field with the electric field reduces g* significantly. g* is almost completely quenched when the magnetic field is aligned with the nanowire axis. These findings confirm recent calculations, where the obtained anisotropy is attributed to a Rashba-type spin-orbit interaction induced by heavy-hole light-hole mixing. …
One and two-electron systems confined in a single and coupled quantum dots defined within a nanowire with a finite radius are studied in the context of spin-orbit coupling effects. Anisotropy of the spin-orbit interaction is discussed in terms of the system geometry and orientation of the external magnetic field vector. We find that there are easy and hard spin polarization axes and in the quantum dot with strong lateral confinement electron spin becomes well defined in spite of the presence of spin-orbit coupling. We present an analytical solution for the one-dimensional limit and study its v…
We demonstrate fully tunable single and double quantum dots in a one-dimensional hole system based on undoped Ge/Si core-shell nanowire heterostructures. The local hole density along the nanowire is controlled by applying voltages to five top gate electrodes with a periodicity of 80 nm, insulated from the wire by a 20 nm-thick HfO_2 dielectric film. Low-temperature transport measurements were used to investigate the magnetic field dependence of Coulomb blockade peaks in a single quantum dot and indicate a strongly anisotropic g-factor with |g_para| = 0.60 +/- 0.03 and |g_perp| < 0.12.
The determination and control of the electron $g$-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the $g$-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the $g$-factor from the splitting of Kondo resonances and find that it varies continuously in the range between $|g^*| = 5$ and 15.
Rectangular nanowires may have domain walls nucleated and moved through them to realize many devices. It has been shown that at a particular width and thickness of a nanowire with perpendicular anisotropy, there is a switch from the domain wall being of Bloch-type to it being of Néel-type. This critical shape can be found through micromagnetics simulations, but here we present an analytic calculation for the energies of both wall types involving two iterations for the demagnetizing energy density. The expressions developed are long, but have the advantage that by simply inputting material para…
We use the $\mathbf{k} \cdot \mathbf{p}$ theory and the envelope function approach to evaluate the Rashba spin-orbit coupling induced in a semiconductor nanowire by a magnetic field at different orientations, taking explicitely into account the prismatic symmetry of typical nano-crystals. We make the case for the strongly spin-orbit-coupled InAs semiconductor nanowires and investigate the anisotropy of the spin-orbit constant with respect to the field direction. At sufficiently high magnetic fields perpendicular to the nanowire, a 6-fold anisotropy results from the interplay between the orbita…
Cylindrical magnetic nanowires with large transversal magnetocrystalline anisotropy have been shown to sustain non-trivial magnetic configurations resulting from the interplay of spatial confinement, exchange, and anisotropies. Exploiting these peculiar 3D spin configurations and their solitonic inhomogeneities are prospected to improve magnetization switching in future spintronics, such as power-saving magnetic memory and logic applications. Here we employ holographic vector field electron tomography to reconstruct the remanent magnetic states in CoNi nanowires with 10 nm resolution in 3D, wi…
The period of magnetization oscillations that occur near the surface of a nanotube or nanowire under the influence of surface magnetic anisotropy is determined by means of numerical simulation as a function of nanowire geometry and material parameters. The hopping mode is observed for stationary movement of a head-to-head domain wall along nanowire axis in applied magnetic field. The average speed of the domain wall in the hopping mode is found to be several times less than the stationary velocity of the wall in the absence of surface anisotropy.
Recent analytical and numerical work on field driven domain wall propagation in nanowires has shown that for large transverse anisotropy and sufficiently large applied fields the Walker profile becomes unstable before the breakdown field, giving way to a slower stationary domain wall. We perform an asymptotic expansion of the Landau Lifshitz Gilbert equation for large transverse magnetic anisotropy and show that the asymptotic dynamics reproduces this behavior. At low applied field the speed increases linearly with the field and the profile is the classic Landau profile. Beyond a critical valu…
We have analyzed the expressed manifestation of the anisotropy of surface energy density in the dynamics of ultrathin nanowires, which break up into disjointed clusters when annealed below their melting temperature. The breakup process is studied for different temperatures and orientations of the nanowire axis relative to its internal crystal structure using the Monte Carlo kinetic method. We have also presented an approximate analytical model of the instability of nanowires. Generally, the interpretation of experimental results refers to the theoretical model developed by Nichols and Mullins,…
The critical current of a superconductor can depend on the direction of current flow due to magnetochiral anisotropy when both inversion and time-reversal symmetry are broken, an effect known as the superconducting (SC) diode effect. Here, we consider one-dimensional (1D) systems in which superconductivity is induced via the proximity effect. In both topological insulator and Rashba nanowires, the SC diode effect due to a magnetic field applied along the spin-polarization axis and perpendicular to the nanowire provides a measure of inversion symmetry breaking in the presence of a superconducto…
Magnetic dissipative droplets are localized, strongly nonlinear dynamical modes excited in nano-contact spin valves with perpendicular magnetic anisotropy. These modes find potential application in nanoscale structures for magnetic storage and computation, but dissipative droplet studies have so far been limited to extended thin films. Here, numerical and asymptotic analyses are used to demonstrate the existence and properties of novel solitons in confined structures. As a nanowire's width is decreased with a nano-contact of fixed size at its center, the observed modes undergo transitions from…
We investigate, angle dependent, the magnetoresistance (MR) of individual self-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenic temperatures. The shape of the MR traces and the observed strong anisotropies in transport can be ascribed to the interplay of the negative magnetoresistance effect and a strong uniaxial anisotropy with the magnetic easy direction pointing along the wire axis. The magnetoresistance can be well described by a quantitative analysis based on the concept of the effective magnetic field, usually used to describe ferromagnetic resonance phenomena. Th…
We develop and study theoretically a minimal model of semiconductor nanowire Josephson junction that incorporates Zeeman and spin-orbit effects. The DC Josephson current is evaluated from the phase-dependent energies of Andreev levels. Upon changing the magnetic field applied, the critical current oscillates manifesting cusps that signal the $0$-$π$ transition. Without spin-orbit interaction, the oscillations and positions of cusps are regular and do not depend on the direction of magnetic field. In the presence of spin-orbit interaction, the magnetic field dependence of the current becomes an…
Antiferromagnets (AFMs) are widely believed to be superior than ferromagnets in spintronics because of their high stability due to the vanishingly small stray field. It is thus expected that the order parameter of AFM should always align along the easy-axis of the crystalline anisotropy. In contrast to this conventional wisdom, we find that the AFM order parameter switches away from the easy-axis below a critical anisotropy strength when an AFM is properly tailored into a nano-structure. The switching time first decreases and then increases with the damping. Above the critical anisotropy, the …
Wireless technology relies on the conversion of alternating electromagnetic fields to direct currents, a process known as rectification. While rectifiers are normally based on semiconductor diodes, quantum mechanical non-reciprocal transport effects that enable highly controllable rectification have recently been discovered. One such effect is magnetochiral anisotropy (MCA), where the resistance of a material or a device depends on both the direction of current flow and an applied magnetic field. However, the size of rectification possible due to MCA is usually extremely small, because MCA rel…
Current induced spin-orbit torques have been studied in ferromagnetic nanowires made of 20 nm thick Co/Pd multilayers with perpendicular magnetic anisotropy. Using Hall voltage and lock-in measurements, it is found that upon injection of an electric current both in-plane (Slonczewski-like) and perpendicular (field-like) torques build up in the nanowire. The torque efficiencies are found to be as large as 1.17 kOe and 5 kOe at 108 A/cm2 for the in-plane and perpendicular components, respectively, which is surprisingly comparable to previous studies in ultrathin (~ 1 nm) magnetic bilayers. We sh…
We study the impacts of the magnetic field direction on the spin-manipulation and the spin-relaxation in a one-dimensional quantum dot with strong spin-orbit coupling. The energy spectrum and the corresponding eigenfunctions in the quantum dot are obtained exactly. We find that no matter how large the spin-orbit coupling is, the electric-dipole spin transition rate as a function of the magnetic field direction always has a $π$ periodicity. However, the phonon-induced spin relaxation rate as a function of the magnetic field direction has a $π$ periodicity only in the weak spin-orbit coupling re…
Searching for new methods controlling antiferromagnetic (AFM) domain wall is one of the most important issues for AFM spintronic device operation. In this work, we study theoretically the domain wall motion of an AFM nanowire, driven by the axial anisotropy gradient generated by external electric field, allowing the electro control of AFM domain wall motion in the merit of ultra-low energy loss. The domain wall velocity depending on the anisotropy gradient magnitude and intrinsic material properties is simulated based on the Landau-Lifshitz-Gilbert equation and also deduced using the energy di…
Due to its low bandgap and high optical efficiency, tellurium is considered an important material candidate for mid-infrared applications. Taking advantage of its structural anisotropy, we fabricated tellurium nanowire devices and investigated the radiative interaction of charge carriers by the polarization-resolved photoconductivity spectra under mid-infrared illumination. The intensity of the photoresponse shows sensitive dependence on temperature and could be significantly boosted by positive voltage bias from the back gate.
An extensive {\it ab initio} study of the physical properties of both linear and zigzag atomic chains of all 4$d$ and 5$d$ transition metals (TM) within the GGA by using the accurate PAW method, has been carried out. All the TM linear chains are found to be unstable against the corresponding zigzag structures. All the TM chains, except Nb, Ag and La, have a stable (or metastable) magnetic state in either the linear or zigzag or both structures. Magnetic states appear also in the sufficiently stretched Nb and La linear chains and in the largely compressed Y and La chains. The spin magnetic mome…
A kinetic Monte Carlo approach is applied to study physical mechanisms responsible for the breakup of nanowires with the diamond cubic crystal structure into a chain of nanoparticles discovered in preceding experiments on Silicon nanowires. We show that this process is based on the well-known mechanism of roughening transition, which specifically manifests itself in quasi-one-dimensional systems/nanowires with a pronounced anisotropy of the surface energy density. Depending on the temperature and orientation of the nanowire relative to its internal crystal structure, the wavelengths of substan…
Free-standing, interconnected metallic nanowire networks with density as low as 40 mg/cm^{3} have been achieved over cm-scale areas, using electrodeposition into polycarbonate membranes that have been ion-tracked at multiple angles. Networks of interconnected magnetic nanowires further provide an exciting platform to explore 3-dimensional nanomagnetism, where their structure, topology and frustration may be used as additional degrees of freedom to tailor the materials properties. New magnetization reversal mechanisms in cobalt networks are captured by the first-order reversal curve method, whi…
Self-organized silicide nanowires are considered as main building blocks of future nanoelectronics and have been intensively investigated. In nanostructures, the lattice vibrational waves (phonons) deviate drastically from those in bulk crystals, which gives rise to anomalies in thermodynamic, elastic, electronic, and magnetic properties. Hence, a thorough understanding of the physical properties of these materials requires a comprehensive investigation of the lattice dynamics as a function of the nanowire size. We performed a systematic lattice dynamics study of endotaxial FeSi$_2$ nanowires,…
We investigated the aspect ratio (thickness/width) dependence of the threshold current density required for the current-driven domain wall (DW) motion for the Ni81Fe19 nanowires. It has been shown theoretically that the threshold current density is proportional to the product of the hard-axis magnetic anisotropy Kperp and the DW width lamda. (Phys. Rev. Lett. 92, 086601 (2004).) We show experimentally that Kperp can be controlled by the magnetic shape anisotropy in the case of the Ni81Fe19 nanowires, and that the threshold current density increases with an increase of Kperp*l. We succeeded to …
An energy-efficient voltage controlled domain wall device for implementing an artificial neuron and synapse is analyzed using micromagnetic modeling in the presence of room temperature thermal noise. By controlling the domain wall motion utilizing spin transfer or spin orbit torques in association with voltage generated strain control of perpendicular magnetic anisotropy in the presence of Dzyaloshinskii-Moriya interaction, different positions of the domain wall are realized in the free layer of a magnetic tunnel junction to program different synaptic weights. The feasibility of scaling of suc…
We report on experimental and computational investigations of the domain structure of ~0.2 x 0.2 x 8 μm single-crystal Ni nanowires (NWs). The Ni NWs were grown by a thermal chemical vapor deposition technique that results in highly-oriented single-crystal structures on amorphous SiOx coated Si substrates. Magnetoresistance measurements of the Ni NWs suggest the average magnetization points largely off the NW long axis at zero field. X-ray photoemission electron microscopy images show a well-defined periodic magnetization pattern along the surface of the nanowires with a period of λ = 250 nm. …
Preceding the current interest in layered materials for electronic applications, research in the 1960's found that black phosphorus combines high carrier mobility with a fundamental band gap. We introduce its counterpart, dubbed few-layer phosphorene, as a new 2D p-type material. Same as graphene and MoS2, phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct and appreciable band-gap that depends on the number of layers. Our transport studies indicate a carrier mobility that reflects its structural anisotr…
Crystal-phase low-dimensional structures offer great potential for the implementation of photonic devices of interest for quantum information processing. In this context, unveiling the fundamental parameters of the crystal phase structure is of much relevance for several applications. Here, we report on the anisotropy of the g-factor tensor and diamagnetic coefficient in wurtzite/zincblende (WZ/ZB) crystal-phase quantum dots (QDs) realized in single InP nanowires. The WZ and ZB alternating axial sections in the NWs are identified by high-angle annular dark-field scanning transmission electron …
We consider the dynamics of polarization of a single domain wall in a magnetic nanowire, which is strongly pinned by impurities. In this case the equation of motion for the polarization parameter does not include any other dynamical variables and is nonlinear due to magnetic anisotropy. We calculated numerically the magnetization dynamics for different choices of parameters under short current pulses inducing polarization switching. Our results show that the switching is most effective for very rapid current pulses. Damping also enhances the switching probability.
Recent ab intio studies of the magnetic properties of all 3d transition metal(TM) freestanding atomic chains predicted that these nanowires could have a giant magnetic anisotropy energy (MAE) and might support a spin-spiral structure, thereby suggesting that these nanowires would have technological applicationsin, e.g., high density magnetic data storages. In order to investigate how the substrates may affect the magnetic properties of the nanowires, here we systematically study the V, Cr and Mn linear atomic chains on the Cu(001) surface based on the density functional theory with the general…
Speed and reliability of magnetic domain wall (DW) motion are key parameters that must be controlled to realize the full potential of DW-based magnetic devices for logic and memory applications. A major hindrance to this is extrinsic DW pinning at specific sites related to shape and material defects, which may be present even if the sample synthesis is well controlled. Understanding the origin of DW pinning and reducing it is especially desirable in electrochemically-deposited cylindrical magnetic nanowires (NWs), for which measurements of the fascinating physics predicted by theoretical compu…
Spin-polarized electric current exerts torque on local magnetic spins, resulting in magnetic domain-wall (DW) motion in ferromagnetic nanowires. Such current-driven DW motion opens great opportunities toward next-generation magnetic devices controlled by current instead of magnetic field. However, the nature of the current-driven DW motion--considered qualitatively different from magnetic-field-driven DW motion--remains yet unclear mainly due to the painfully high operation current densities J_OP, which introduce uncontrollable experimental artefacts with serious Joule heating. It is also cruc…
Current induced spin-orbit effective magnetic fields in metal/ferromagnet/oxide trilayers provide a new way to manipulate the magnetization, which is an alternative to the conventional current induced spin transfer torque arising from noncollinear magnetization. Ta/CoFeB/MgO structures are expected to be useful for non-volatile memories and logic devices due to its perpendicular anisotropy and large current induced spin-orbit effective fields. However many aspects such as the angular and temperature dependent phenomena of the effective fields are little understood. Here, we evaluate the angula…
Heat dissipation issues are the emerging challenges in the field of flexible electronics. Thermal management of flexible electronics creates a demand for flexible materials with highly anisotropic thermal conductivity, which work as heat spreaders to remove excess heat in the in-plane direction and as heat shields to protect human skin or device components under them from heating. This study proposes a self-assembled silver nanowire network with high thermal and electrical anisotropy with the potential to solve these challenges. The in-plane thermal conductivity of the network along the axial …
The magnetic properties of carbon nanotube encapsulated nickel nanowires (C.E. nanowires of diameter ~ 10 nm), and its comparison to other forms of Ni are carried out in this work. The saturation magnetization (M_s) and coercivity (H_c) for C.E. nanowires are 1.0 emu/g and 230 Oe. The temperature dependence of coercivity follows T^0.77 dependence indicating a superparamagnetic behavior. The field-cooled and zero-field-cooled plots indicate that the blocking temperature (T_B) ~ 300 K. These altered magnetic properties of C.E. nanowires are mainly due to the nanoscale confinement effect from car…
The low in-plane symmetry in layered 1T'-ReS$_2$ results in strong band anisotropy, while its manifestation in the electronic properties is challenging to resolve due to the lack of effective approaches for controlling the local current path. In this work, we reveal the giant transport anisotropy in monolayer to four-layer ReS$_2$ by creating directional conducting paths via nanoscale ferroelectric control. By reversing the polarization of a ferroelectric polymer top layer, we induce conductivity switching ratio of >1.5x10$^8$ in the ReS$_2$ channel at 300 K. Characterizing the domain-defined …
Magnetic skyrmionium is a novel magnetization configuration with zero skyrmion number, which is composed by two skyrmions with opposite skyrmion number. Here, we study the dynamics of skyrmionium under an anisotropy gradient. We find that the skyrmionium can be efficiently driven by an anisotropy gradient with moving straightly along the direction of gradient. The skyrmion Hall angle for skyrmionium is close to zero which is much smaller than that of skyrmion. while the speed is much larger. We also demonstrate that the skyrmionium motion depends on the damping cofficient, and the skyrmionium …
We investigated how the dynamics of a domain wall are affected by the presence of spin density waves in a ferromagnetic wire. Domain walls and other scattering centres can cause coherent spin density waves to propagate through a wire when a current is applied. In some cases the spin torque due to these scattered electrons can be enhanced such that it is on a par with the exchange and anisotropy energies controlling the shape and dynamics of the domain wall. In such a case we find that the spin density waves enhance the current induced domain wall motion, allowing for domain wall motion with sm…
Due to a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum wells. Using a rotating magnetic field, we observe a large in-plane (|g1|=26) and out-of-plane (|g1|=52) g-factor anisotropy. Additionally, we investigate crossings of subbands with opposite spins and …
We investigate the electronic band structure of modulation-doped GaAs/AlGaAs core-shell nanowires for both n- and p-doping. We developed an 8-band Burt-Foreman k.p Hamiltonian approach to describe coupled conduction and valence bands in heterostructured nanowires of arbitrary composition, growth directions, and doping. Coulomb interactions with the electron/hole gas are taken into account within a mean-field self-consistent approach. We map the ensuing multi-band envelope function and Poisson equations to optimized, non-uniform real-space grids by the finite element method. Self-consistent cha…
We investigated the effect of material choice and orientation in limiting source to drain tunneling (SDT) in nanowire (NW) p-MOSFETs. Si, Ge, GaSb, and Ge0.96Sn0.04 nanowire MOSFETs (NWFETs) were simulated using rigorous ballistic quantum transport simulations. To properly account for the non-parabolicity and anisotropy of the valence band the k.p method was used. For each material, a set of six different transport/confinement directions were simulated to identify the direction with the highest ON-current (ION ). For Ge, GaSb, and GeSn [001]/110/-110 oriented NWFETs showed the best ON-state pe…
One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst maintaining high readout and gate fidelities. We demonstrate detection of a single electron spin using energy-selective readout in a CMOS-fabricated nanowire device with an integrated charge detector. We measure a valley splitting of 0.3 meV and 0.16 meV in two similar devices. The anisotropy of the spin-valley mixing is measured and shown to follow the depend…
