Mid-infrared photoconductivity spectra of single tellurium nanowires]{Mid-infrared photoconductivity spectra of single tellurium nanowires

Contactless photoconductivity measurements on (Si) nanowires

Conducting nanowires possess remarkable physical properties unattainable in bulk materials. However our understanding of their transport properties is limited by the difficulty of connecting them electrically. In this Letter we investigate phototransport in both bulk silicon and silicon nanowires using a superconducting multimode resonator operating at frequencies between 0.3 and 3 GHz. We find that whereas the bulk Si response is mainly dissipative, the nanowires exhibit a large dielectric polarizability. This technique is contactless and can be applied to many other semiconducting nanowires …

Raman Response and Transport Properties of One-Dimensional van der Waals Tellurium Nanowires

Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physical and electronic properties than bulk tellurium. Here we show that few-chain and single-chain van der Waals tellurium nanowires can be isolated using carbon nanotube and boron nitride nanotube encapsulation. With the approach, the number of atomic chains can be controlled by the inner diameter of the nanotube. The Raman response of the structures suggests that the interaction between a single-atomic tellurium chain a…

碲纳米线中栅极可调且依赖手性的电荷-自旋转换

Gate-tuneable and chirality-dependent charge-to-spin conversion in Tellurium nanowires

本研究针对手性有机材料电导率低的局限，在碲纳米线中实现全电自旋极化生操控与探测，发现其取向由手性和电流决定、大小栅极可调，为无磁手性自旋电子器件奠定基础。

Electron tunneling from colloidal CdSe quantum dots to ZnO nanowires studied by time-resolved luminescence and photoconductivity experiments

CdSe quantum dots (QDs) with different organic linker molecules are attached to ZnO nanowires (NWs) to study the luminescence dynamics and the electron tunneling from the QDs to the nanowires in time-resolved photoluminescence (PL) and photoconductivity measurements. The PL transients of the QD luminescence indicate two different recombination channels: the direct recombination inside the QD core and the recombination via QD surface defect states. After linking the QDs to the ZnO NW surface, photo-induced electron tunneling from an excited state of the QD into the conduction band of the nanowi…

Contact-Barrier Free, High Mobility, Dual-Gated Junctionless Transistor Using Tellurium Nanowire

Gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology node. In particular, the junctionless nanowire transistors are highly scalable with reduced variability due to avoidance of steep source/drain junction formation by ion implantation. Here we demonstrate a dual-gated junctionless nanowire \emph{p}-type field effect transistor using tellurium nanowire as the channel. The dangling-bond-free surface due to the unique helical crystal structure of the nanowire, coupled with…

手性碲纳米线中的法布里-珀罗干涉、g因子各向异性和栅极可调量子点

Fabry-Perot Interference, g-factor Anisotropy, and Gate-Tunable Quantum dot in Chiral Tellurium Nanowires

通过水热生长碲纳米线实现准弹道输运、各向异性塞曼谱和栅极可调量子点，揭示自旋轨道能隙和巨g因子，为自旋量子比特和Majorana零模提供平台。