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arXiv 0901.3370cond-mat.supr-concond-mat.mtrl-sci
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层状砷化物BaMn2As2单晶的磁性、输运和热性质

Magnetic, Transport, and Thermal Properties of Single Crystals of the Layered Arsenide BaMn2As2

Yogesh Singh, A. Ellern, D. C. Johnston

摘要:

报道了用MnAs和Sn助熔剂生长BaMn_2As_2晶体。对晶体进行了室温晶体学、各向异性等温磁化强度M与磁场H和磁化率chi与温度T、ab平面电阻率rho(T)和热容C(T)测量。证实了BaMn_2As_2的四元ThCr_2Si_2型结构。在用M(H)等温线对痕量的铁磁MnAs杂质相进行校正后,推断的晶体的本征chi(T)数据是各向异性的,在T = 2 K时chi_{ab} / chi_{c} \approx为7.5。各向异性chi数据的温度依赖性表明,BaMn_2As_2在室温下是共线反铁磁体,易磁化轴沿c轴,外推Neel温度T_N \sim 500 K. rho(T)在低于310 K时随T的降低而降低,但在低于\sim 50 K时则增加,表明BaMn 2 As 2是一种小带隙半导体,激活能为0.03 eV。从2 K到5 K的C(T)数据与这种绝缘基态一致,表现出低温索末菲系数γ = 0.0(4)mJ/mol K^2。由这些数据确定德拜温度为θ_D = 246(4)K。BaMn_2As_2是制备ThCr_2Si_2型超导体的潜在母体化合物。

英文摘要:

Growth of BaMn2As2 crystals using both MnAs and Sn fluxes is reported. Room temperature crystallography, anisotropic isothermal magnetization M versus field H and magnetic susceptibility chi versus temperature T, electrical resistivity in the ab plane rho(T), and heat capacity C(T) measurements on the crystals were carried out. The tetragonal ThCr2Si2-type structure of BaMn2As2 is confirmed. After correction for traces of ferromagnetic MnAs impurity phase using M(H) isotherms, the inferred intrinsic chi(T) data of the crystals are anisotropic with chi_{ab}/chi_{c} \approx 7.5 at T = 2 K. The temperature dependences of the anisotropic chi data suggest that BaMn2As2 is a collinear antiferromagnet at room temperature with the easy axis along the c axis, and with an extrapolated Neel temperature T_N \sim 500 K. The rho(T) decreases with decreasing T below 310 K but then increases below \sim 50 K, suggesting that BaMn2As2 is a small band-gap semiconductor with an activation energy of order 0.03 eV. The C(T) data from 2 to 5 K are consistent with this insulating ground state, exhibiting a low temperature Sommerfeld coefficient gamma = 0.0(4) mJ/mol K^2. The Debye temperature is determined from these data to be theta_D = 246(4) K. BaMn2As2 is a potential parent compound for ThCr2Si2-type superconductors.

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