通过单层掺杂和常规尖峰退火形成圆片级亚5 nm结
Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing
摘要：
我们报告的形成亚5 nm ultrashallow结在4英寸的硅晶片，使分子单层掺杂的磷和硼原子和使用传统的尖峰退火。的交界处，其特征在于二次离子质谱和非接触式薄层电阻测量。发现大部分（~70%）的掺入的掺杂剂是电活性的，因此，对于给定的掺杂剂面积剂量，能够实现低的薄层电阻。晶圆级的均匀性进行了调查，发现是有限的尖峰退火工具在实验中使用的温度均匀性。值得注意的是，观察到最小的结漏电流（<1 μ A/cm 2），这突出了通过该工艺形成的结的质量。结果清楚地表明了单层掺杂方法的多功能性和潜力，用于实现受控的分子级超浅结形成，而不会在半导体中引入缺陷。
英文摘要：
We report the formation of sub-5 nm ultrashallow junctions in 4 inch Si wafers enabled by the molecular monolayer doping of phosphorous and boron atoms and the use of conventional spike annealing. The junctions are characterized by secondary ion mass spectrometry and non-contact sheet resistance measurements. It is found that the majority (~70%) of the incorporated dopants are electrically active, therefore, enabling a low sheet resistance for a given dopant areal dose. The wafer-scale uniformity is investigated and found to be limited by the temperature homogeneity of the spike anneal tool used in the experiments. Notably, minimal junction leakage currents (<1 uA/cm2) are observed which highlights the quality of the junctions formed by this process. The results clearly demonstrate the versatility and potency of the monolayer doping approach for enabling controlled, molecular-scale ultrashallow junction formation without introducing defects in the semiconductor.
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