闪速退火工程化晶圆级弛豫反铁电材料用于增强能量存储性能
Flash annealing-engineered wafer-scale relaxor antiferroelectrics for enhanced energy storage performance
AI总结：
通过闪速退火工艺制备晶圆级弛豫反铁电材料，实现高能量存储密度和优异热稳定性。
摘要：
介电电容器由于其高功率密度和快速的操作速度，是能量存储系统中的关键组件。然而，同时优化能量存储密度与热稳定性仍是一个重大挑战。在此，我们开发了一种闪速退火工艺，具有1000摄氏度/秒的超快速加热和冷却速率，这使得PbZrO3薄膜能够在几秒钟内快速结晶，同时将其高温微结构锁定在室温。这产生了具有36%的亚晶粒边界分数、数纳米的纳米域和可忽略的铅挥发的紧凑薄膜。这些贡献于具有高击穿强度（4800 kV/cm）和大极化率（70 uC/cm2）的弛豫反铁电薄膜。因此，我们实现了63.5 J/cm3的高能量存储密度和优异的热稳定性，性能退化在250摄氏度以下小于3%。我们的方法可扩展到如Pb(Zr0.52Ti0.48)O3等铁电体，并在晶圆级上实现，提供具有工业可扩展性的芯片级非线性介电能量存储解决方案。
英文摘要：
Dielectric capacitors are essential for energy storage systems due to their high-power density and fast operation speed. However, optimizing energy storage density with concurrent thermal stability remains a substantial challenge. Here, we develop a flash annealing process with ultrafast heating and cooling rates of 1000 oC/s, which facilitates the rapid crystallization of PbZrO3 film within a mere second, while locking its high-temperature microstructure to room temperature. This produces compact films with sub-grain boundaries fraction of 36%, nanodomains of several nanometers, and negligible lead volatilization. These contribute to relaxor antiferroelectric film with a high breakdown strength (4800 kV/cm) and large polarization (70 uC/cm2). Consequently, we have achieved a high energy storage density of 63.5 J/cm3 and outstanding thermal stability with performance degradation less than 3% up to 250 oC. Our approach is extendable to ferroelectrics like Pb(Zr0.52Ti0.48)O3 and on wafer scale, providing on-chip nonlinear dielectric energy storage solutions with industrial scalability.
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