Time-Resolved Measurements of the Interfacial Charge Transfers by Capacitive Voltage Probe
Andrei V. Pakoulev, Vladimir Burtman, Dmitry Zaslavsky
备注：
Abbreviations: 1,8-naphthalene-dicarboxylic anhydride-4, 5- dicarboxylic imide (see also figure 1) 1,4,5,8-naphthalene-tetracarbpxylic diimide Manuscript Information: 9 text pages (including the title page, legends and references) 4 figures
When redox active molecules are covalently tethered to the surface of the n-doped silicon, light induces their oxidation by the semiconductor. To visualize this charge separation we have followed the formation and decay of the surface photovoltage by an auxiliary transparent electrode, which serves as a capacitive probe that picks up the transient surface photovoltage. This method has been used in electronics and biophysics but is novel for the surface redox chemistry. The probe provides both the direction of the charge transfer and the resolution of the dynamics. Its application is independent of the optical properties of the semiconductor. Laser initiation of the reaction permits quantitative measurements of the reactions with the rate constants ~108-103 s-1. The electron injection from covalently tethered NTCI(A) molecules into silicon was fast (k >109 s-1). The back electron transfer is poly-disperse with the components ranging from ~10 microseconds and up.
In this work, we aim to show that there are generally four possible mapping functions that can be used to map the time-domain or frequency-domain representations of an applied voltage input to the resulting time-domain or frequency-domain electrical charge output; i.e. when the capacitive device is voltage-charged. Alternatively, there are four more possible combinations when the device is current-charged. The dual relationship between each pair of functions for the case of voltage or charge input are provided in terms of single or double Fourier transforms. All eight system functions coincide…
Voltage modulation of yttrium iron garnet (YIG) with compactness, high speed response, energy efficiency and both practical/theoretical siginificances can be widely applied to various YIG based spintronics such as spin Hall, spin pumping, spin Seeback effects. Here we initial an ionic modulation of interfacial magnetism process on YIG/Pt bilayer heterostructures, where the Pt capping would influence the ferromagnetic (FMR) field position significantly, and realize a significant magnetism enhancement in bilayer system. A large voltage induced FMR field shifts of 690 Oe has been achieved in YIG …
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Heterostructures of 2D van der Waals semiconductor materials offer a diverse playground for exploring fundamental physics and potential device applications. In InSe/GaSe heterostructures formed by sequential mechanical exfoliation and stacking of 2D monochalcogenides InSe and GaSe, we observe charge transfer between InSe and GaSe due to the 2D van der Waals interface formation and a strong hysteresis effect in the electron transport through the InSe layer when a gate voltage is applied through the GaSe layer. A gate voltage dependant conductance decay rate is also observed. We relate these obs…
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Charge carrier recombination in the perovskite solar cells (PSCs) has a deep influence on the electrical performance, such as open circuit voltage, short circuit current, fill factor and ultimately power conversion efficiency. The impacts of injection barrier, recombination channels, doping properties of carrier transport layers and light intensity on the performance of PSCs are theoretically investigated by drift-diffusion model in this work. The results indicate that due to the injection barrier at the interfaces of perovskite and carrier transport layer, the accumulated carriers modify the …
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The control of spin-dependent properties by voltage, not involving magnetization switching, has significant advantages for low-power spintronics. Here, we predict that the interfacial crystal Hall effect (ICHE) can serve for this purpose. We show that the ICHE can occur in heterostructures composed of compensated antiferromagnetic metals and non-magnetic insulators due to reduced symmetry at the interface, and it can be made reversible if the antiferromagnet is layered symmetrically between two identical ferroelectric layers. We explicitly demonstrate this phenomenon using density functional t…
