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arXiv 0812.4862cond-mat.mes-hallcond-mat.mtrl-sci
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高密度存储器中量子点阵列结的双稳态

Bistable states of quantum dot array junctions for high-density memory

David M. -T. Kuo, Yia-Chung Chang

摘要:

我们证明了具有六重简并p轨道的耦合量子点(QD)的二维(2D)阵列可以显示出双稳态态,适合于在低功耗的高密度存储器件中的应用。由于这些QD阵列中的$p_x$和$p_y$轨道的点间耦合,可以在x-y平面中形成二维导带,而$p_z$轨道保持在x-y平面中,使得它们之间的点间耦合可以被忽略。我们模拟这样的系统,考虑到在$p_z$轨道和本地的$p_z$轨道与由$p_x$和$p_y$轨道形成的二维导带的耦合的电子之间的现场排斥相互作用。在扩展的安德森模型中的格林函数方法被用来计算通过量子点的隧穿电流。我们发现,由于$p_z$轨道之间的原位库仑相互作用(U)和由$p_x$ / $p_y$轨道杂化产生的导带态的离域性质的相互作用,这种系统可以存在双稳态隧穿电流。该双稳态电流对二维能带的详细能带结构不敏感,但关键地取决于$U$的强度和左右隧穿速率的比率。当二维量子点阵列简化为一维量子点阵列时,电双稳态的行为可以持续,表明这些纳米级结构的高密度包装的可行性。

英文摘要:

We demonstrate that two-dimensional (2D) arrays of coupled quantum dots (QDs) with six-fold degenerate p orbitals can display bistable states, suitable for application in high-density memory device with low power consumption. Due to the inter-dot coupling of $p_x$ and $p_y$ orbitals in these QD arrays, two dimensional conduction bands can be formed in the x-y plane, while the $p_z$ orbitals remain localized in the x-y plane such that the inter-dot coupling between them can be neglected. We model such systems by taking into account the on-site repulsive interactions between electrons in $p_z$ orbitals and the coupling of the localized $p_z$ orbitals with the 2D conduction bands formed by $p_x$ and $p_y$ orbitals. The Green's function method within an extended Anderson model is used to calculate the tunneling current through the QDs. We find that bistable tunneling current can exist for such systems due to the interplay of the on-site Coulomb interactions (U) between the $p_z$ orbitals and the delocalized nature of conduction band states derived from the hybridization of $p_x$ / $p_y$ orbitals. This bistable current is not sensitive to the detailed band structure of the two dimensional band, but depends critically on the strength of $U$ and the ratio of the left and right tunneling rates. The behavior of the electrical bistability can be sustained when the 2D QD array reduces to a one-dimensional QD array, indicating the feasibility for high-density packing of these bistable nanoscale structures.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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