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arXiv 0812.0829physics.ins-detcond-mat.other
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中子发生器场解吸离子源的研制

Field desorption ion source development for neutron generators

I. Solano, B. Reichenbach, P. R. Schwoebel, D. L. Chichester, C. E. Holland, K. L. Hertz, J. P. Brainard

摘要:

一种用于氘氚中子发生器的氘离子源的新方法正在研制中。该源是基于氘从金属尖端表面的场解吸。首次对微加工场发射体针尖阵列进行了场解吸研究。到目前为止,已经将30 V/nm的最大场施加到阵列尖端表面,尽管实现20 V/nm至可能25 V/nm的场更典型。在室温下,在大约20 V/nm和20 - 30 V/nm的场分别观察到原子氘离子的解吸和分子氘的气相场电离。常见的表面吸附物,如氢,碳,水,和一氧化碳的脱附观察到超过~10 V/nm的字段。在真空中,将阵列加热到800 ℃的温度可以有效地去除观察到的许多表面污染物。

英文摘要:

A new approach to deuterium ion sources for deuterium-tritium neutron generators is being developed. The source is based upon the field desorption of deuterium from the surfaces of metal tips. Field desorption studies of microfabricated field emitter tip arrays have been conducted for the first time. Maximum fields of 30 V/nm have been applied to the array tip surfaces to date, although achieving fields of 20 V/nm to possibly 25 V/nm is more typical. Both the desorption of atomic deuterium ions and the gas phase field ionization of molecular deuterium has been observed at fields of roughly 20 V/nm and 20-30 V/nm, respectively, at room temperature. The desorption of common surface adsorbates, such as hydrogen, carbon, water, and carbon monoxide is observed at fields exceeding ~10 V/nm. In vacuo heating of the arrays to temperatures of the order of 800 C can be effective in removing many of the surface contaminants observed.

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