arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 0811.1937cond-mat.mes-hallcond-mat.dis-nncond-mat.mtrl-sci
收藏

准二维和准一维电子系统的扩散输运

Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems

I. Knezevic, E. B. Ramayya, D. Vasileska, S. M. Goodnick

摘要:

量子限制半导体结构是现代电子学的基石。在这些结构中的空间限制导致形成离散的低维子带。在室温下,由于声子、带电杂质、表面粗糙度和其他电子的有效散射,载流子在不同状态之间转移,因此传输是散射限制的(扩散的),并由玻尔兹曼传输方程很好地描述。在这篇综述中,我们提出了用于描述和模拟准二维和准一维半导体结构中扩散电子输运的理论框架。详细介绍了硅MOSFET和纳米线中的输运。

英文摘要:

Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different states due to efficient scattering with phonons, charged impurities, surface roughness and other electrons, so transport is scattering-limited (diffusive) and well described by the Boltzmann transport equation. In this review, we present the theoretical framework used for the description and simulation of diffusive electron transport in quasi-two-dimensional and quasi-one-dimensional semiconductor structures. Transport in silicon MOSFETs and nanowires is presented in detail.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑