High domain wall velocity at zero magnetic field induced by low current densities in spin-valve nanostripes
Stefania Pizzini, Vojtech Uhlir, Jan Vogel, Nicolas Rougemaille, Sana Laribi, Vincent Cros, Erika Jimenez, Julio Camarero, Carsten Tieg, Edgar Bonet, Marlio Bon… 展开作者
Stefania Pizzini, Vojtech Uhlir, Jan Vogel, Nicolas Rougemaille, Sana Laribi, Vincent Cros, Erika Jimenez, Julio Camarero, Carsten Tieg, Edgar Bonet, Marlio Bonfim, Richard Mattana, Cyrile Deranlot, Frédric Petroff, Christian Ulysse, Giancarlo Faini, Albert Fert
Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below $10^{12} \unit{A/m^2}$, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities.
We report on the criterion for the dynamic transformation of the internal structure of moving domain walls (DWs) in soft magnetic thin-film nanostripes above the Walker threshold field, Hw. In order for the process of transformation from transverse wall (TW) to vortex wall (VW) or antivortex wall (AVW) occurs, the edge-soliton core of the TW-type DW should grow sufficiently to the full width at half maximum of the out-of-plane magnetizations of the core area of the stabilized vortex (or antivortex) by moving inward along the transverse (width) direction. Upon completion of the nucleation of th…
Domain wall motion induced by nanosecond current pulses in nanostripes with perpendicular magnetic anisotropy (Pt/Co/AlO$_x$) is shown to exhibit negligible inertia. Time-resolved magnetic microscopy during current pulses reveals that the domain walls start moving, with a constant speed, as soon as the current reaches a constant amplitude, and no or little motion takes place after the end of the pulse. The very low 'mass' of these domain walls is attributed to the combination of their narrow width and high damping parameter $α$. Such a small inertia should allow accurate control of domain wall…
Controlling domain wall motion is important due to the impact on the viability of proposed nanowire devices. One hurdle is slow domain wall speed when driven by fields greater than the Walker field, due to nucleation of vortices in the wall. We present simulation results detailing the dynamics of these vortices; including the nucleation and subsequent fast ejection of the vortex core leading to fast domain wall speeds. The ejection is due to the reversal of the core moments by an out-of-plane field. The technique can be used to produce domain walls of known orientation independent of the initi…
In a thin magnetic nanostripe, an anti-vortex nucleates inside a moving domain wall when driven by an in-plane magnetic field greater than the so-called Walker field. The nucleated anti-vortex must cross the width of the nanostripe before the domain wall can propagate again, leading to low average domain wall speeds. A large out-of-plane magnetic field, applied perpendicularly to the plane of the nanostripe, inhibits the nucleation of the anti-vortex leading to fast domain wall speeds for all in-plane driving fields. We present micromagnetic simulation results relating the anti-vortex dynamics…
We use spin-torque resonance to probe simultaneously and separately the dynamics of a magnetic domain wall and of magnetic domains in a nanostripe magnetic tunnel junction. Thanks to the large associated resistance variations we are able to analyze quantitatively the resonant properties of these single nanoscale magnetic objects. In particular, we find that the magnetic damping of both domains and domain walls is doubled compared to the damping value of their host magnetic layer. We estimate the contributions to damping arising from dipolar couplings between the different layers in the junctio…
It is known that oscillatory domain-wall (DW) motions in soft magnetic thin-film nanostripes above the Walker critical field lead to a remarkable reduction in the average DW velocities. In a much-higher-field region beyond the velocity-breakdown regime, however, the DW velocities have been found to increase in response to a further increase of the applied field. We report on the physical origin and detailed mechanism of this unexpected behavior. We associate the mechanism with the serial dynamic processes of the nucleation of vortex-antivortex (V-AV) pairs inside the stripe or at its edges, th…
We show that the magnetic properties of antiferromagnetic layered NiCl$_{2}$ can be altered under nano-sizing depending on dimensionality and morphology type of the corresponding nano-forms. By means of Monte-Carlo simulations within classical Heisenberg model, the spin ordering, magnetic part of heat capacity C$_{v}$ and Néel temperatures T$_{N}$ for multi-walled NiCl$_{2}$ nanotubes and a fullerene were calculated and analyzed in comparison with the bulk NiCl$_{2}$ and multilayered two-dimensional NiCl$_{2}$ crystals and nanostripes. We have found that the nano-structuring of NiCl$_{2}$ at t…
We have used time-resolved x-ray photoemission electron microscopy to investigate the magnetization dynamics induced by nanosecond current pulses in NiFe/Cu/Co nanostripes. A large tilt of the NiFe magnetization in the direction transverse to the stripe is observed during the pulses. We show that this effect cannot be quantitatively understood from the amplitude of the Oersted field and the shape anisotropy. High frequency oscillations observed at the onset of the pulses are attributed to precessional motion of the NiFe magnetization about the effective field. We discuss the possible origins o…
The propagation of a domain wall in a submicron ferromagnetic spin-valve stripe is investigated using giant magnetoresistance. A notch in the stripe efficiently traps an injected wall stopping the domain propagation. The authors show that the magnetic field at which the wall is depinned displays a stochastic nature. Moreover, the depinning statistics are significantly different for head to head and tail-to-tail domain walls. This is attributed to the dipolar field generated in the vicinity of the notch by the pinned layer of the spin-valve.
We investigate numerically the transverse versus vortex phase diagram of head-to-head domain walls in Co/Cu/Py spin valve nano-stripes (Py: Permalloy), in which the Co layer is mostly single domain while the Py layer hosts the domain wall. The range of stability of the transverse wall is shifted towards larger thickness compared to single Py layers, due to a magnetostatic screening effect between the two layers. An approached analytical scaling law is derived, which reproduces faithfully the phase diagram.
We have studied the current-induced displacement of a domain wall (DW) in the permalloy (Py) layer of a Co/Cu/Py spin valve structure at zero and very small applied field. The displacement is in opposite direction for opposite dc currents, and the current density required to move DW is only of the order of 10^6 A/cm^2. For H = 3 Oe, a back and forth DW motion between two stable positions is observed. We also discuss the effect of an applied field on the DW motion.
We found by micromagnetic simulations that the motion of a transverse wall (TW) type domain wall in magnetic thin-film nanostripes can be manipulated via interaction with spin waves (SWs) propagating through the TW. The velocity of the TW motion can be controlled by changes of the frequency and amplitude of the propagating SWs. Moreover, the TW motion is efficiently driven by specific SW frequencies that coincide with the resonant frequencies of the local modes existing inside the TW structure. The use of propagating SWs, whose frequencies are tuned to those of the intrinsic TW modes, is an al…
The magnetostatic interaction between magnetic domain walls (DWs) in adjacent nanotracks has been shown to produce strong inter-DW coupling and mutual pinning. In this paper, we have used electrical measurements of adjacent spin-valve nanotracks to follow the positions of interacting DWs. We show that the magnetostatic interaction between DWs causes not only mutual pinning, as observed till now, but that a travelling DW can also induce the depinning of DWs in near-by tracks. These effects may have great implications for some proposed high density magnetic devices (e.g. racetrack memory, DW log…
We present experimental results on the displacement of a domain wall by injection of a dc current through the wall. The samples are 1 micron wide long stripes of a CoO/Co/Cu/NiFe classical spin valve structure. The stripes have been patterned by electron beam lithography. A neck has been defined at 1/3 of the total length of the stripe and is a pinning center for the domain walls, as shown by the steps of the giant magnetoresistance curves at intermediate levels (1/3 or 2/3) between the resistances corresponding to the parallel and antiparallel configurations. We show by electric transport mea…
A study of transverse tail-to-tail magnetic domain walls (DW) in novel current perpendicular to the plane (CPP) spin valves (SV) of various dimensions is presented. For films with dimensions larger than the DW width, we find that DW motion can give rise to a substantial low frequency noise. For dimensions comparable to the DW width, we show that the DW can be controlled by an external field or by a spin momentum torque as opposed to the case of CPP-SV with uniform magnetization. It is shown that in a single domain biased CPP-SV, the spin torque can give rise to 1/f-type noise. The dipolar fiel…
According to the recent experiment by the Fert group, the velocity of domain wall motion in the spin valve ferromagnetic nanowires was almost doubly enhanced compared to the old value. In this work, we propose an additional torque model, arising from the interlayer exchange interaction, which can enhance or suppress the domain wall velocity depending on the sign of the exchange constant or the wall motion direction relative to the magnetization orientation of the fixed layer.
Active manipulation of spin waves is essential for the development of magnon-based technologies. Here, we demonstrate programmable spin-wave filtering by resetting the spin structure of a pinned 90$^\circ$ Néel domain wall in a continuous CoFeB film with abrupt rotations of uniaxial magnetic anisotropy. Using phase-resolved micro-focused Brillouin light scattering and micromagnetic simulations, we show that broad 90$^\circ$ head-to-head or tail-to-tail magnetic domain walls are transparent to spin waves over a broad frequency range. In contrast, magnetic switching to a 90$^\circ$ head-to-tail …
Magnetic systems based on the manipulation of domain walls (DWs) in nano-tracks have been shown to store data at high density, perform complex logic operations, and mechanically manipulate magnetic beads. The magnetic track has been a model system to study magnetic and magneto-electronic phenomena, such as field induced DW propagation and spin-transfer torque. This thesis focuses on DW manipulation and DW-based devices in spin-valve (SV) tracks. In comparison to monolayer tracks, the SV track enables more sensitive and versatile measurements, as well as an electronic output of DW-based devices…
Current induced domain wall (DW) motion in perpendicularly magnetized nanostripes in the presence of spin orbit torques is studied. We show using micromagnetic simulations that the direction of the current induced DW motion and the associated DW velocity depend on the relative values of the field like torque (FLT) and the Slonczewski like torques (SLT). The results are well explained by a collective coordinate model which is used to draw a phase diagram of the DW dynamics as a function of the FLT and the SLT. We show that a large increase in the DW velocity can be reached by a proper tuning of…
Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage through magnetoelectric coupling in magnetostrictive/piezoelectric systems may pave the way toward ultra low-power electronics. Although the former effect has been demon-strated in several multiferroic heterostructures, the incorporation of such complex geometries into practical magnetic memory and logic nanodevices has been lacking. Here, we demonstrate the room temperature control of a domain wall gate with an elec…
We consider long and narrow spin valves composed of a first magnetic layer with a single domain wall (DW), a normal metal spacer and a second magnetic layer that is a planar or a perpendicular polarizer. For these structures, we study numerically DW dynamics taking into account the spin torques due to the perpendicular spin currents. We obtain high DW velocities: 50 m/s for planar polarizer and 640 m/s for perpendicular polarizer for J = 5*10^6 A/cm^2. These values are much larger than those predicted and observed for DW motion due to the in-plane spin currents. The ratio of the magnitudes of …
In spite of the absence of a macroscopic magnetic moment, an anti-ferromagnet is spin-polarized on an atomic scale. The electric current passing through a conducting anti-ferromagnet is polarized as well, leading to spin-transfer torques when the order parameter is textured, such as in anti-ferromagnetic non-collinear spin valves and domain walls. We report a first principles study on the electronic transport properties of anti-ferromagnetic systems. The current-induced spin torques acting on the magnetic moments are comparable with those in conventional ferromagnetic materials, leading to mea…
Magnetic molecules possess a high potential as building blocks for the design of spintronic devices. Moreover, the use of molecular materials opens the way for the controlled use of bottom-up, e.g. supramolecular, processing techniques combining massively parallel self-fabrication with conventional top-down nanostructuring techniques. The development of solid state spintronic devices based on the giant magnetoresistance (GMR), tunnel magnetoresistance (TMR), and spin valve effects has revolutionized the field of magnetic memory applications. Recently, organic semiconductors were inserted into …
Exchange bias is a phenomenon critical to solid-state technologies that require spin valves or non-volatile magnetic memory. The phenomenon is usually studied in the context of magnetic interfaces between antiferromagnets and ferromagnets, where the exchange field of the former acts as a means to pin the polarization of the latter. In the present study, we report an unusual instance of this phenomenon in the topological Weyl semimetal Co3Sn2S2, where the magnetic interfaces associated with domain walls suffice to bias the entire ferromagnetic bulk. Remarkably, our data suggests the presence of…
Spin pumping is the emission of a spin current by a magnetization dynamics while spin transfer stands for the excitation of magnetization by spin currents. Using Onsager's reciprocity relations we prove that spin pumping and spin-transfer torques are two fundamentally equivalent dynamic processes in magnetic structures with itinerant electrons. We review the theory of the coupled motion of the magnetization order parameter and electron for textured bulk ferromagnets (e.g. containing domain walls) and heterostructures (such as spin valves). We present first-principles calculations for the mater…
Segmented magnetic nanowires are a promising route for the development of three dimensional data storage techniques. Such devices require a control of the coercive field and the coupling mechanisms between individual magnetic elements. In our study, we investigate electrodeposited nanomagnets within host templates using vibrating sample magnetometry and observe a strong dependence between nanowire length and coercive field (25 nm to 5 $μ$m) and diameter (25 nm to 45 nm). A transition from a magnetization reversal through coherent rotation to domain wall propagation is observed at an aspect rat…
A spin-polarized current transfers its spin-angular momentum to a local magnetization, exciting current-induced magnetization dynamics. So far, most studies in this field have focused on the direct effect of spin transport on magnetization dynamics, but ignored the feedback from the magnetization dynamics to the spin transport and back to the magnetization dynamics. Although the feedback is usually weak, there are situations when it can play an important role in the dynamics. In such situations, self-consistent calculations of the magnetization dynamics and the spin transport can accurately de…
The Technical Committee of the IEEE Magnetics Society has selected 7 research topics to develop their roadmaps, where major developments should be listed alongside expected timelines; (i) hard disk drives, (ii) magnetic random access memories, (iii) domain-wall devices, (iv) permanent magnets, (v) sensors and actuators, (vi) magnetic materials and (vii) organic devices. Among them, magnetic materials for spintronic devices have been surveyed as the first exercise. In this roadmap exercise, we have targeted magnetic tunnel and spin-valve junctions as spintronic devices. These can be used for ex…
This paper describes a numerical experiment, based on full micromagnetic simulations of current-driven magnetization dynamics in nanoscale spin valves, to identify the origins of spectral linewidth broadening in spin torque oscillators. Our numerical results show two qualitatively different regimes of magnetization dynamics at zero temperature: regular (single-mode precessional dynamics) and chaotic. In the regular regime, the dependence of the oscillator integrated power on frequency is linear, and consequently the dynamics is well described by the analytical theory of current-driven magnetiz…
The review is focused on our recent predictions of nontrivial physical phenomena taking place in the nanostructure single-layer grapheme on ferroelectric substrate, which are related with magnetic field. In particular we predicted that 180-degree domain walls in a strained ferroelectric film can induce p-n junctions in a graphene channel and lead to the unusual temperature and gate voltage dependences of the perpendicular modes ν of the integer quantum Hall effect. The non-integer numbers and their irregular sequence principally differ from the conventional sequence ν= 3/2, 5/3. The unusual v-…
