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arXiv 1303.4422cond-mat.mtrl-sci
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相邻自旋阀纳米轨道中磁畴壁的耦合和诱导脱钉

Coupling and induced depinning of magnetic domain walls in adjacent spin valve nanotracks

J. Sampaio, L. O'Brien, D. Petit, D. E. Read, E. R. Lewis, H. T. Zeng, L. Thevenard, S. Cardoso, R. P. Cowburn

摘要:

相邻纳米轨道中的磁畴壁(DW)之间的静磁相互作用已被示出产生强的DW间耦合和相互钉扎。在本文中,我们已经使用相邻的自旋阀纳米轨道的电气测量,以遵循相互作用的DW的位置。我们发现,DWs之间的静磁相互作用的原因,不仅相互钉扎,到现在为止观察到的,但一个旅行DW也可以诱导DWs在附近的轨道脱钉。这些效应可能对一些提出的高密度磁性器件(例如,跑道存储器、DW逻辑电路或基于DW的MRAM)具有重大意义。

英文摘要:

The magnetostatic interaction between magnetic domain walls (DWs) in adjacent nanotracks has been shown to produce strong inter-DW coupling and mutual pinning. In this paper, we have used electrical measurements of adjacent spin-valve nanotracks to follow the positions of interacting DWs. We show that the magnetostatic interaction between DWs causes not only mutual pinning, as observed till now, but that a travelling DW can also induce the depinning of DWs in near-by tracks. These effects may have great implications for some proposed high density magnetic devices (e.g. racetrack memory, DW logic circuits, or DW-based MRAM).

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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