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arXiv 0810.3111cond-mat.supr-concond-mat.mes-hall
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微波辐射下电荷-相位量子比特的相干拉比响应

Coherent Rabi response of a charge-phase qubit under microwave irradiation

V. I. Shnyrkov, D. Born, A. A. Soroka, W. Krech

摘要:

我们报告的电荷相位量子比特的射频测量是在连续微波照射下的状态下弱耦合到一个射频槽路。我们研究了射频阻抗对两个重要参数的依赖性,如微波辐射的功率,其频率接近两个最低量子位能级之间的差距,和内部热浴的温度。我们已经发现,量子比特对射频槽的反作用效应,反之亦然,槽对量子比特的反作用效应,导致槽看到的量子比特阻抗Re $Z(ω)$的负实部和正实部。我们已经实现了噪声谱测量直接阻抗读出对应于最大电压响应的极端点,并获得约0.017 $Ω$的绝对值为负和正Re $Z(ω)$。我们的研究结果表明,在10至200 mK的温度范围内,具有负和正动态电阻的量子比特的相干单光子和多光子拉比动力学的存在和持久性。

英文摘要:

We report on radio-frequency measurements of the charge-phase qubit being under continuous microwave irradiation in the state of weak coupling to a radio-frequency tank circuit. We studied the rf impedance dependence on the two important parameters such as power of microwave irradiation whose frequency is close to the gap between the two lowest qubit energy levels, and temperature of the internal heat bath. We have found that backaction effects of the qubit on the rf tank, and vice versa, tank on the qubit, lead to a negative as well as a positive real part of the qubit impedance Re$Z(ω)$ seen by the tank. We have implemented noise spectroscopy measurements for direct impedance readout at the extreme points corresponding to maximum voltage response and obtained absolute values of about 0.017 $Ω$ for the negative and positive Re$Z(ω)$. Our results demonstrate the existence and persistence of the coherent single- and multi-photon Rabi dynamics of the qubit with both negative and positive dynamic resistance inserted into the tank in the temperature range of 10 to 200 mK.

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